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The quantum Goos-H\"anchen shifts of the transmitted electron beam through an AA-stacked bilayer graphene superlattices is investigated. We found that the band structures of graphene superlattices can have more than one Dirac point, their…

介观与纳米尺度物理 · 物理学 2016-04-20 Youness Zahidi , Ilham Redouani , Ahmed Jellal

In graphene moir\'e superlattices, electronic interactions between layers are mostly hidden as band structures get crowded because of folding, making their interpretation cumbersome. Here, the evolution of the electronic band structure as a…

介观与纳米尺度物理 · 物理学 2021-09-01 Francisco Sanchez-Ochoa , Andres Botello-Mendez , Cecilia Noguez

We study the superlattice minibands produced by the interplay between moir\'e pattern induced by hexagonal BN substrate on graphene layer and the interlayer coupling in bilayer graphene with Bernal stacking (BLG). We compare moir\'e…

介观与纳米尺度物理 · 物理学 2013-11-20 M. Mucha-Kruczynski , J. Wallbank , V. I. Fal'ko

Gap opening at the Dirac point of the single-layer graphene with periodic scalar and vector potentials has been theoretically investigated under the continuum model. The symmetry analysis indicates that the two-fold degeneracy at the Dirac…

介观与纳米尺度物理 · 物理学 2015-05-28 Xin Lin , Hailong Wang , Hui Pan , Huaizhe Xu

Among two-dimensional atomic crystals, hexagonal boron nitride (hBN) is one of the most remarkable materials to fabricate heterostructures revealing unusual properties. We perform first-principles calculations to determine whether…

介观与纳米尺度物理 · 物理学 2014-04-09 Sohee Park , Changwon Park , Gunn Kim

In this work we show, by means of a density functional theory formalism, that the simple physical contact between hydrogen terminated boron nitride surfaces gives rise to a metallic interface with free carries of opposite sign at each…

Bandgap engineering by substituting C with B and N atoms in graphene has been shown to be a promising way to improve semiconducting properties of graphene. Such hybridized monolayers consisting of hexagonal BN phases in graphene (h-BNC)…

材料科学 · 物理学 2015-05-28 Qing Peng , Amir Zamiri , Suvranu De

The effect of Rashba spin-orbit interaction and anisotropic strain on the electronic, optical and thermodynamic properties of artificial graphene-like superlattice composed of InAs-GaAs quantum dots has been considered theoretically. The…

介观与纳米尺度物理 · 物理学 2019-11-27 Vram Mughnetsyan , Aram Manaselyan , Manuk Barseghyan , Albert Kirakosyan , David Laroze

After the discovery of graphene and its many fascinating properties, there has been a growing interest for the study of "artificial graphenes". These are totally different and novel systems which bear exciting similarities with graphene.…

介观与纳米尺度物理 · 物理学 2019-06-20 Gilles Montambaux

A so-called artificial graphene is an artificial material whose low-energy carriers are described by the massless Dirac equation. Applying a periodic potential with triangular symmetry to a two-dimensional electron gas is one way to make…

介观与纳米尺度物理 · 物理学 2016-02-18 Pilkwang Kim , Cheol-Hwan Park

Bilayer graphene is a highly promising material for electronic and optoelectronic applications since it is supporting massive Dirac fermions with a tuneable band gap. However, no consistent picture of the gap's effect on the optical and…

Recent introduction of superlattice potentials has opened new avenues for engineering tunable electronic band structures featuring topologically nontrivial moir\'{e}-like bands. Here we consider optoelectronic properties of Bernal-stacked…

介观与纳米尺度物理 · 物理学 2025-12-29 Nabil Atlam , Swati Chaudhary , Arpit Raj , Matthew Matzelle , Barun Ghosh , Gregory A. Fiete , Arun Bansil

Finding an effective and controllable way to create a sizable energy gap in graphene-based systems has been a challenging topic of intensive research. We propose that the hybrid of boron nitride and graphene (h-BNC) at low BN doping serves…

介观与纳米尺度物理 · 物理学 2023-12-01 Chih-Piao Chuu , Wei-En Tseng , Kuan-Hung Liu , Ching-Ming Wei , Mei-Yin Chou

By investigating the optoelectronic properties of prototypical graphene/hexagonal boron nitride (h-BN) heterostructures, we demonstrate how a nanostructured combination of these materials can lead to a dramatic enhancement of light-matter…

We use large-scale DFT calculations to investigate with unprecedented detail the so-called spin-orbit (SO) proximity effect in graphene adsorbed on the Pt(111) and Ni(111)/Au semi-infinite surfaces, previously studied via spin and angle…

材料科学 · 物理学 2018-09-12 Jagoda Slawinska , Jorge I. Cerda

Recent experimental findings and theoretical predictions suggest that nitrogen-doped CVD-grown graphene may give rise to electronic band gaps due to impurity distributions which favour segregation on a single sublattice. Here we demonstrate…

介观与纳米尺度物理 · 物理学 2016-02-09 Thomas Aktor , Antti-Pekka Jauho , Stephen R. Power

Symmetry arguments are used to describe all possible two-dimensional periodic corrugations of graphene ("nanomeshes") capable of inducing tangible semiconducting gap. Such nanomeshes or superlattices break the initial graphene translational…

介观与纳米尺度物理 · 物理学 2011-12-09 I. I. Naumov , A. M. Bratkovsky

We present a theoretical analysis of the current-voltage characteristics of a ballistic superconductor-normal-superconductor (SNS) junction, in which a strip of graphene is coupled to two superconducting electrodes. We focus in the…

超导电性 · 物理学 2009-11-11 J. C. Cuevas , A. Levy Yeyati

An energy gap can be opened in the electronic spectrum of graphene by lifting its sublattice symmetry. In bilayers, it is possible to open gaps as large as 0.2 eV. However, these gaps rarely lead to a highly insulating state expected for…

A number of interesting properties of graphene and graphite are postulated to derive from the peculiar bandstructure of graphene. This bandstructure consists of conical electron and hole pockets that meet at a single point in momentum (k)…

强关联电子 · 物理学 2007-05-23 Aaron Bostwick , Taisuke Ohta , Thomas Seyller , K. Horn , Eli Rotenberg