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相关论文: Strong correlation induced charge localization in …

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Local antiferromagnetism coexists with superconductivity in the cuprates. Charge segregation provides a way to reconcile these properties. Direct evidence for modulated spin and charge densities has been found in neutron and X-ray…

超导电性 · 物理学 2009-10-31 J. M. Tranquada , N. Ichikawa , K. Kakurai , S. Uchida

Unravelling the nature of doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. For this purpose, we study the evolution of…

强关联电子 · 物理学 2018-03-14 Yao Wang , Brian Moritz , Cheng-Chien Chen , Thomas P. Devereaux , Krzysztof Wohlfeld

The paradigmatic Mott insulator arises in strongly correlated systems, where strong local repulsion localizes interacting particles in underlying egg-holder-like potential. The corresponding Mott transition reflects delocalization of the…

超导电性 · 物理学 2020-05-28 Andreas Glatz , Valerii Vinokur

We calculate the spin correlation function and the magnetic longitudinal and transverse susceptibilities of a two-dimensional antiferromagnet doped with a small concentration of holes, in the t-J model. We find that the motion of holes…

强关联电子 · 物理学 2007-05-23 F. Carvalho Dias , I. R. Pimentel

We show that doped Mott insulators exhibit a collective degree of freedom, not made out of the elemental excitations, because the number of single-particle addition states at low energy per electron per spin is greater than one. The…

强关联电子 · 物理学 2008-05-30 Philip Phillips , Ting-Pong Choy , Robert G. Leigh

Starting from the effective low energy theory of a doped Mott insulator, we show that the effective carrier density in the underdoped regime agrees with a two - fluid description. Namely, it has distinct temperature independent and…

强关联电子 · 物理学 2013-05-29 Shiladitya Chakraborty , Philip Phillips

The evolution of electronic (spin and charge) excitations upon carrier doping is an extremely important issue in superconducting layered cuprates and the knowledge of its asymmetry between electron- and hole-dopings is still fragmentary.…

Pairing of mobile charge carriers in doped antiferromagnets plays a key role in the emergence of unconventional superconductivity. In these strongly correlated materials, the pairing mechanism is often assumed to be mediated by magnetic…

Doping a Mott insulator gives rise to unconventional superconducting correlations. Here we address the interplay between d-wave superconductivity and Mott physics using the two-dimensional Hubbard model with cellular dynamical mean-field…

强关联电子 · 物理学 2023-08-30 C. Walsh , M. Charlebois , P. Sémon , A. -M. S. Tremblay , G. Sordi

The critical temperature of an underdoped cuprate superconductor is limited by its phase stiffness $\rho$. In this Letter we argue that the dependence of $\rho$ on doping $x$ should be understood as a consequence of deleterious competition…

强关联电子 · 物理学 2015-05-13 Wei-Cheng Lee , Jairo Sinova , A. A. Burkov , Yogesh Joglekar , A. H. MacDonald

We use scanning tunneling microscopy to visualize the atomic-scale electronic states induced by a pair of hole dopants in Ca2CuO2Cl2 parent Mott insulator of cuprates. We find that when the two dopants approach each other, the transfer of…

超导电性 · 物理学 2021-06-14 Haiwei Li , Shusen Ye , Jianfa Zhao , Changqing Jin , Yayu Wang

Recent progress in optically trapped ultracold atomic gases is now making it possible to access microscopic observables in doped Mott insulators, which are the parent states of high-temperature superconductors. This makes it possible to…

量子气体 · 物理学 2021-03-31 Emil Blomquist , Johan Carlström

We study the problem of designing an artificial Mott insulator in a correlated oxide heterostructure. We consider the extreme limit of quantum confinement based on ionic discontinuity doping, and argue that a unique dimer Mott insulator can…

强关联电子 · 物理学 2013-04-30 Ru Chen , SungBin Lee , Leon Balents

In contrast to the conventional von Neumann bipartite entanglement entropy (bEE), we show that a more appropriate description of the one-dimensional doped Mott insulator is a new kind of mutual entanglement entropy (mEE) between the charge…

强关联电子 · 物理学 2020-04-28 Wayne Zheng , Zheng-Yu Weng

In this paper, we investigate the impact of nonlocal correlations on charge fluctuations in the two-dimensional single-band Hubbard model close to the Mott metal-to-insulator transition, employing the ladder dynamical vertex approximation.…

强关联电子 · 物理学 2025-10-21 Irakli Titvinidze , Julian Stobbe , Marvin Leusch , Georg Rohringer

Motivated by the widespread experimental observations of nematicity in strongly underdoped cuprate superconductors, we investigate the possibility of enhanced nematic fluctuations in the vicinity of a Mott insulator that displays…

强关联电子 · 物理学 2019-04-24 Peter P. Orth , Bhilahari Jeevanesan , Rafael M. Fernandes , Jörg Schmalian

In strongly correlated electron systems, the emergence of states in the Mott gap in the single-particle spectrum following the doping of the Mott insulator is a remarkable feature that cannot be explained in a conventional rigid-band…

强关联电子 · 物理学 2015-08-20 Masanori Kohno

Scattering by a single impurity introduced in a strongly correlated electronic system is studied by exact diagonalization of small clusters. It is shown that an inert site which is spinless and unable to accomodate holes can give rise to…

凝聚态物理 · 物理学 2009-10-22 D. Poilblanc , W. Hanke , D. J. Scalapino

The microscopic mechanism by which doped holes disrupt the antiferromagnetic order is one of the fundamental questions in cuprates. In this work, we propose a unified microscopic theory in which doped holes form spatially localized…

强关联电子 · 物理学 2026-05-19 Xiaodong Wang , Ping Xu , Jiong Mei , Shao-Hang Shi , Zi-Xiang Li , Mingpu Qin , Kun Jiang , Hui-Ke Jin

The existence of conserved spin Hall currents is shown in a strongly correlated system without involving spin-orbit coupling. The spin Hall conductivity is determined by intrinsic bulk properties, which remains finite even when the charge…

强关联电子 · 物理学 2007-05-23 Su-Peng Kou , Xiao-Liang Qi , Zheng-Yu Weng