相关论文: The VOI-Based Valleytronics

We describe an angularly asymmetric interface-scattering mechanism which allows to spatially separate the electrons in the two low-energy valleys of bilayer graphene. The effect occurs at electrostatically defined interfaces separating…

We study hot electron transport in short-channel suspended multilayer graphene devices created by a distinct experimental approach. For devices with semi-transparent contact barriers, a dip of differential conductance (dI/dV) has been…

The valley degeneracy of electron states in graphene stimulates intensive research of valley-related optical and transport phenomena. While many proposals on how to manipulate valley states have been put forward, experimental access to the…

A yet unexplored area in graphene electronics is the field of quantum ballistic transport through graphene nanostructures. Recent developments in the preparation of high mobility graphene are expected to lead to the experimental…

Electrons in graphene, in addition to their spin, have two pseudospin degrees of freedom: sublattice and valley pseudospin. Valleytronics uses the valley degree of freedom as a carrier of information similar to the way spintronics uses…

It has been indicated that the path forward for the widespread usage of ferroelectric (FE) materials may be considerably facilitated through the reduction of programming voltages to on-chip logic compatible values of < 1 V. Obstacles…

A chip to wafer scale, CMOS compatible method of graphene device fabrication has been established, which can be integrated into the back end of the line (BEOL) of conventional semiconductor process flows. In this paper, we present…

In the presence of crossed electric and magnetic fields, a graphene ribbon has chiral states running along sample edges and along boundaries between $p$-doped and $n$-doped regions. We here consider the scattering of edge states into…

Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high…

Scientists are always yearning for new and exciting ways to unlock graphene's true potential. However, recent reports suggest this two-dimensional material may harbor some unique properties, making it a viable candidate for use in…

In graphene, the valleys represent spin-like quantities and can act as a physical resource in valley-based electronics to novel quantum computation schemes. Here we demonstrate a direct route to tune and read the valley quantum states of…

We show that topological waves at the interface between two magnetic domains in a graphene device are possible. First, we consider the case of a linear relation between the applied gate voltage and local density in the channel and,…

The generation of valley current is a fundamental goal in graphene valleytronics but no practical ways of its realization are known yet. We propose a workable scheme for the generation of bulk valley current in a graphene mechanical…

The unconventional properties of graphene, with a massless Dirac band dispersion and large coherence properties, have raised a large interest for applications in nanoelectronics. In this work, we emphasize that graphene two dimensional…

A valley plasmonic crystal for graphene surface plasmons (GSPs) is proposed. We demonstrate that a designer metagate, placed within a few nanometers from graphene, can be used to impose a triangular periodic Fermi energy landscape on the…

Usually, graphene is used in its horizontal directions to design novel concept devices. Here, we report a single electron tunneling diode based on quantum tunneling through a vertical graphene two-barrier junction. The junction is formed by…

The valley Hall effect (VHE) holds great promise for valleytronic applications by leveraging the valley degree of freedom. To date, research on VHE has focused on its linear response to an applied current, leaving nonlinear valley responses…

The isolation of graphene has triggered an avalanche of studies into the spin-dependent physical properties of this material, as well as graphene-based spintronic devices. Here we review the experimental and theoretical state-of-art…

In Bernal-stacked bilayer graphene (BBG), the Landau levels give rise to an intimate connection between valley and layer degrees of freedom. Adding a moir\'e superlattice potential enriches the BBG physics with the formation of topological…

It is by now well established that high-quality graphene enables a gate-tunable low-loss plasmonic platform for the efficient confinement, enhancement, and manipulation of optical fields spanning a broad range of frequencies, from the mid…