相关论文: Signatures of Valley Kondo Effect in Si/SiGe Quant…

Recent progress in the fabrication of quantum dots using silicon opens the prospect of observing the Kondo effect associated with the valley degree of freedom. We compute the dot density of states using an Anderson model with infinite…

We study the spin-valley Kondo effect of a silicon quantum dot occupied by $% \mathcal{N}$ electrons, with $\mathcal{N}$ up to four. We show that the Kondo resonance appears in the $\mathcal{N}=1,2,3$ Coulomb blockade regimes, but not in…

The Kondo effect in coupled quantum dots is investigated theoretically under magnetic fields. We show that the magnetoconductance (MC) illustrates peak structures of the Kondo resonant spectra. When the dot-dot tunneling coupling $V_C$ is…

We study the Kondo effect in a quantum dot which is coupled to ferromagnetic leads and analyse its properties as a function of the spin polarization of the leads. Based on a scaling approach we predict that for parallel alignment of the…

Transport measurements at cryogenic temperatures through a few electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in gate voltage induce a transition from an isolated dot toward…

The valley splitting, which lifts the degeneracy of the lowest two valley states in a SiO$_2$/(100)Si/SiO$_2$ quantum well is examined through transport measurements. We demonstrate that the valley splitting can be observed directly as a…

We report the observation of Kondo physics in a spin- 3/2 hole quantum dot. The dot is formed close to pinch-off in a hole quantum wire defined in an undoped AlGaAs/GaAs heterostructure. We clearly observe two distinctive hallmarks of…

We report a strong Kondo effect (Kondo temperature ~ 4K) at high magnetic field in a selective area growth semiconductor quantum dot. The Kondo effect is ascribed to a singlet-triplet transition in the ground state of the dot. At the…

We investigate a lateral semiconductor quantum dot with a large number of electrons in the limit of strong coupling to the leads. A Kondo effect is observed and can be tuned in a perpendicular magnetic field. This Kondo effect does not…

We investigate theoretically the linear conductance of a two-level quantum dot as a function of the gate voltage and different strength of coupling to the external electronic system (the reservoir). Apart from the weak coupling regime,…

It has been suggested that a zero-bias conductance peak in quantum wires signifies the presence of Kondo spin-correlations, which might also relate to an intriguing 1D spin-effect known as the 0.7 structure. These zero-bias anomalies (ZBA)…

We investigate quantum dots in clean single-wall carbon nanotubes with ferromagnetic PdNi-leads in the Kondo regime. In most odd Coulomb valleys the Kondo resonance exhibits a pronounced splitting, which depends on the tunnel coupling to…

We report the fabrication of a van der Waals tunneling device hosting a defect-bound quantum dot coupled to NbSe$_2$. We find that upon application of magnetic field, the device exhibits a zero-bias conductance peak. The peak, which splits…

We predict a new zero-bias anomaly in the differential conductance through a quantum dot coupled to two ferromagnetic leads with antiparallel magnetization. The anomaly differs in origin and properties from other anomalies in transport…

We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field $B$ and Hall density by…

We have studied low-temperature single electron transport through ultra-small Si quantum dots. We find that at low temperatures Coulomb blockade is partially lifted at certain gate voltages. Furthermore, we observed an enhancement of…

We analyze the equilibrium transport properties of underscreened Kondo effect in the case of a two-level quantum dot coupled to ferromagnetic leads. Using the numerical renormalization group (NRG) method, we have determined the gate voltage…

A numerically exact calculation of the T=0 transport properties of a quantum wire interacting with a lateral two-level quantum dot is presented. The wire conductance is calculated for all different states of charge and spin of the quantum…

We investigate the Kondo effect in a quadruple quantum dot device of coupled-double quantum dots (DQDs), which simultaneously contains intra-DQDs and inter-DQDs coupling. A variety of novel behaviors are observed. The differential…

We report on a comprehensive study of spin-1/2 Kondo effect in a strongly-coupled quantum dot realized in a high-quality InAs nanowire. The nanowire quantum dot is relatively symmetrically coupled to its two leads, so the Kondo effect…