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The quantum capacitance model is applied to obtain an exact solution for the space-resolved carrier density in a multigated doped graphene sheet at zero temperature, with quantum correction arising from the finite electron capacity of the…

介观与纳米尺度物理 · 物理学 2013-04-02 Ming-Hao Liu

We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that…

A scalable tight-binding model is applied for large-scale quantum transport calculations in clean graphene subject to electrostatic superlattice potentials, including two types of graphene superlattices: moir\'e patterns due to the stacking…

介观与纳米尺度物理 · 物理学 2020-04-29 Szu-Chao Chen , Rainer Kraft , Romain Danneau , Klaus Richter , Ming-Hao Liu

We use numerically exact Chebyshev expansion and kernel polynomial methods to study transport through circular graphene quantum dots in the framework of a tight-binding honeycomb lattice model. Our focus lies on the regime where individual…

介观与纳米尺度物理 · 物理学 2015-06-18 A. Pieper , R. L. Heinisch , H. Fehske

We present the coupling of two frameworks -- the pseudo-open boundary simulation method known as constant potential Molecular Dynamics simulations (C$\mu$MD), combined with QMMD calculations -- to describe the properties of graphene…

We propose a quantum gate architecture that allows for the systematic control of the effective exchange interactions between magnetic impurities embedded in nano-scale graphene flakes connected by a gated bridge. The entanglement between…

介观与纳米尺度物理 · 物理学 2021-09-06 Phillip Weinberg , Adrian E. Feiguin

We investigate the conductivity of graphene sheet deformed over a gate. The effect of the deformation on the conductivity is twofold: The lattice distortion can be represented as pseudovector potential in the Dirac equation formalism,…

介观与纳米尺度物理 · 物理学 2013-05-29 M. V. Medvedyeva , Ya. M. Blanter

Electrostatic gating lies in the heart of modern FET-based integrated circuits. Usually, the gate electrode has to be placed very close to the conduction channel, typically a few nanometers, in order to achieve efficient tunability.…

介观与纳米尺度物理 · 物理学 2021-03-31 Aolin Deng , Cheng Hu , Peiyue Shen , Xingdong Luo , Jiajun Chen , Bosai Lyu , Kenji Watanabe , Takashi Taniguchi , Qi Liang , Jie Ma , Zhiwen Shi

We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither dielectric-material deposition nor electron-beam irradiation on the graphene, we obtained…

介观与纳米尺度物理 · 物理学 2015-05-30 Seung-Geol Nam , Dong-Keun Ki , Jong Wan Park , Youngwook Kim , Jun Sung Kim , Hu-Jong Lee

We report a new Quantum Mechanical/Molecular Dynamics (QM/MD) simulation loop to model the coupling between the electron and atom dynamics in solid/liquid interfacial systems. The method can describe simultaneously both the quantum…

材料科学 · 物理学 2021-02-03 Joshua D Elliott , Alessandro Troisi , Paola Carbone

We theoretically analyze the possibility to confine electrons in single-layer graphene with the help of metallic gates, via the evaluation of the density of states of such a gate-defined quantum dot in the presence of a ring-shaped metallic…

介观与纳米尺度物理 · 物理学 2015-06-19 Martin Schneider , Piet W. Brouwer

The Chalker-Coddington network model (introduced originally as a model for percolation in the quantum Hall effect) is known to map onto the two-dimensional Dirac equation. Here we show how the network model can be used to solve a scattering…

介观与纳米尺度物理 · 物理学 2008-09-17 I. Snyman , J. Tworzydlo , C. W. J. Beenakker

Finite-temperature properties of graphene monolayers under tensile stress have been studied by path-integral molecular dynamics (PIMD) simulations. This method allows one to consider the quantization of vibrational modes in these…

材料科学 · 物理学 2018-02-14 Carlos P. Herrero , Rafael Ramirez

We have developed a technique to tune the carrier density in graphene using a lithium-ion-based solid electrolyte. We demonstrate that the solid electrolyte can be used as both a substrate to support graphene and a back gate.It can induce a…

材料科学 · 物理学 2016-10-25 Jialin Zhao , Meng Wang , Hui Li , Xuefu Zhang , Lixing You , Shan Qiao , Bo Gao , Xiaoming Xie , Mianheng Jiang

We perform a phenomenological analysis of the problem of the electronic doping of a graphene sheet by deposited transition metal atoms, which aggregate in clusters. The sample is placed in a capacitor device such that the electronic doping…

The introduction and control of ferromagnetism in graphene opens up a range of new directions for fundamental and applied studies. Several approaches have been pursued so far, such as introduction of defects, functionalization with adatoms,…

介观与纳米尺度物理 · 物理学 2016-11-04 J. C. Leutenantsmeyer , A. A. Kaverzin , M. Wojtaszek , B. J. van Wees

The electronic states of an electrostatically confined cylindrical graphene quantum dot and the electric transport through this device are studied theoretically within the continuum Dirac-equation approximation and compared with numerical…

介观与纳米尺度物理 · 物理学 2011-08-12 G. Pal , W. Apel , L. Schweitzer

We present an analytical theory for the gate electrostatics and the classical and quantum capacitance of the graphene nanoribbons (GNRs) and compare it with the exact self-consistent numerical calculations based on the tight-binding…

介观与纳米尺度物理 · 物理学 2014-02-12 A. A. Shylau , J. W. Klos , I. V. Zozoulenko

We investigate the atomic and electronic structures of cyclooctatetraene (COT) molecules on graphene and analyze their dependence on external gate voltage using first-principles calculations. The external gate voltage is simulated by adding…

材料科学 · 物理学 2018-10-15 Sehoon Oh , Michael F. Crommie , Marvin L. Cohen

In this research work, roll-to-roll chemical vapor deposited graphene device electronic transport properties are benchmarked to elucidate and comprehend mobility degradation in the real-world commercial application of graphene devices.…

介观与纳米尺度物理 · 物理学 2022-10-13 Bhupesh Bishnoi
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