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相关论文: Ultrafast charge recombination in photoexcited Mot…

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We theoretically analyse the process of charge recombination in the planar Mott-Hubbard insulators with the aim to explain short picosecond-range lifetime of photoexcited carriers, experimentally studied via pump-probe experiments on the…

强关联电子 · 物理学 2015-01-07 Zala Lenarčič , Peter Prelovšek

We present a theory for the recombination of (charged) holons and doublons in one-dimensional organic Mott insulators, which is responsible for the decay of a photoexcited metallic state. Due to the charge-spin separation, the dominant…

强关联电子 · 物理学 2015-11-18 Zala Lenarčič , Martin Eckstein , Peter Prelovšek

The undoped antiferromagnetic Mott insulator naturally has one charge carrier per lattice site. When it is doped with additional carriers, they are unstable to spin fluctuation-mediated Cooper pairing as well as other unconventional types…

Strongly correlated systems exhibit intriguing properties caused by intertwined microscopic in- teractions that are hard to disentangle in equilibrium. Employing non-equilibrium time-resolved photoemission spectroscopy on the…

We study the photoinduced breakdown of a two-orbital Mott insulator and resulting metallic state. Using time-dependent density matrix renormalization group, we scrutinize the real-time dynamics of the half-filled two-orbital Hubbard model…

强关联电子 · 物理学 2018-06-07 Julian Rincon , Elbio Dagotto , Adrian E. Feiguin

We study the pump-probe response of three insulating cuprates and develop a model for its recombination kinetics. The dependence on time, fluence, and both pump and probe photon energies imply many-body recombination on femtosecond…

Motivated by recent experiments on Mott insulators, in both iridates and ultracold atoms, we theoretically study the effects of magnetic order on the Mott-Hubbard excitons. In particular, we focus on spin-mediated doublon-holon pairing in…

强关联电子 · 物理学 2024-04-23 T. -S. Huang , C. L. Baldwin , M. Hafezi , V. Galitski

We employ dynamical density-matrix renormalization group (DDMRG) and field-theory methods to determine the frequency-dependent optical conductivity in one-dimensional extended, half-filled Hubbard models. The field-theory approach is…

强关联电子 · 物理学 2009-11-07 F. H. L. Essler , F. Gebhard , E. Jeckelmann

We demonstrate the existence of an unconventional pairing state in photodoped Mott insulators on ladder and quasi-two-dimensional geometries, characterized by quasi-long-range doublon-holon correlations that signal Mott exciton…

强关联电子 · 物理学 2026-04-16 Ryota Ueda , Madhumita Sarkar , Zala Lenarčič , Denis Golež , Kazuhiko Kuroki , Tatsuya Kaneko

In the ionic Hubbard model, the onsite repulsion $U$, which drives a Mott insulator and the ionic potential $V$, which drives a band insulator, compete with each other to open up a window of charge fluctuations when $U \sim V$. We study…

强关联电子 · 物理学 2017-01-04 Abhisek Samanta , Rajdeep Sensarma

The Mott insulator is the quintessential strongly correlated electronic state. We obtain complete insight into the physics of the two-dimensional Mott insulator by extending the slave-fermion (holon-doublon) description to finite…

Electronic correlations arise from the competition between the electrons' kinetic and Coulomb interaction energy and give rise to a rich phase diagram and many emergent quasiparticles. The binding of doubly-occupied and empty sites into a…

We investigate the resonant two-magnon Raman scattering in two-dimensional (2D) Mott insulators by using a half-filled 2D Hubbard model in the strong coupling limit. By performing numerical diagonalization calculations for small clusters,…

强关联电子 · 物理学 2007-05-23 T. Tohyama , H. Onodera , K. Tsutsui , S. Maekawa

We investigate the effect of nonlocal interactions on the photo-doped Mott insulating state of the two-dimensional Hubbard model using a nonequilibrium generalization of the dynamical cluster approximation. In particular, we compare the…

强关联电子 · 物理学 2020-02-26 Nikolaj Bittner , Denis Golez , Martin Eckstein , Philipp Werner

The doped Mott insulator in one dimension has been studied based on the phase Hamiltonian with the Umklapp scattering process, in which the charge degree of freedom is described by the quantum sine-Gordon model. The well-known equivalence…

凝聚态物理 · 物理学 2009-10-28 Michiyasu Mori , Hidetoshi Fukuyama

Charge creation via quantum tunneling, i.e. dielectric breakdown, is one of the most fundamental and significant phenomena arising from strong light(field)-matter coupling. In this work, we conduct a systematic numerical analysis of quantum…

强关联电子 · 物理学 2026-05-08 Thomas Hansen , Lars Bojer Madsen , Yuta Murakami

High-harmonic generation (HHG) in strongly correlated Mott insulators is investigated using exact diagonalization and time-dependent density-matrix propagation of a laser-driven one-dimensional Hubbard chain. By projecting onto equilibrium…

光学 · 物理学 2026-05-05 Tao-Yuan Du , Hui-Ru Li , Bo Li , Ruifeng Lu

We investigate experimentally the ultrafast changes in the spectral response of the Mott insulator $\kappa$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Cl ($\kappa$-Cl) upon photodoping with intense excitation at 1.6 eV and probing with continuum pulses…

Time-resolved photoluminescence measurements show that the decay time for charged excitons in a GaAs two-dimensional electron gas increases by an order of magnitude at high magnetic fields. Unlike neutral excitons, the charged exciton…

介观与纳米尺度物理 · 物理学 2009-10-31 H. Okamura , D. Heiman , M. Sundaram , A. C. Gossard

An analytical solution of the Mott transition is obtained for the Hubbard model on the Bethe lattice in the large coordination number ($z$) limit. The excitonic binding of doublons (doubly occupied sites) and holons (empty sites) is shown…

强关联电子 · 物理学 2016-12-15 Sen Zhou , Long Liang , Ziqiang Wang
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