中文
相关论文

相关论文: Strain-induced Dirac cone-like electronic structur…

200 篇论文

In the case of graphene, hydrogenation removes the conductivity due to the bands forming the Dirac cone by opening up a band gap. This type of chemical functionalization is of utmost importance for electronic applications. As predicted by…

材料科学 · 物理学 2017-12-07 W. Wang , W. Olovsson , R. I. G. Uhrberg

In the present work, we investigated the electronic and elastic properties in equilibrium and under strain of the type-II Dirac semimetal NiTe$_2$ using density functional theory (DFT). Our results demonstrate the tunability of Dirac nodes'…

In this work we study theoretically the electronic properties of a sheet of graphene grown on a periodic heterostructure substrate. We write an effective Dirac equation, which includes a dependence of both the band gap and the Fermi…

材料科学 · 物理学 2014-11-12 Jonas R. F. Lima , F. Moraes

Electronic structures of wurtzite GaAs nanowires in the [0001] direction were studied using first-principles calculations. It was found that the band gap of GaAs nanowires experience a direct-to-indirect transition when the diameter of the…

材料科学 · 物理学 2012-08-07 Andrew Copple , Nathaniel Ralston , Xihong Peng

A remarkable manifestation of the quantum character of electrons in matter is offered by graphene, a single atomic layer of graphite. Unlike conventional solids where electrons are described with the Schrodinger equation, electronic…

介观与纳米尺度物理 · 物理学 2008-09-16 Z. Q. Li , E. A. Henriksen , Z. Jiang , Z. Hao , M. C. Martin , P. Kim , H. L. Stormer , D. N. Basov

Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness.…

介观与纳米尺度物理 · 物理学 2016-08-17 N. -C. Yeh , C. -C. Hsu , M. L. Teague , J. -Q. Wang , D. A. Boyd , C. -C. Chen

We determine the electronic structure of a graphene sheet on top of a lattice-matched hexagonal boron nitride (h-BN) substrate using ab initio density functional calculations. The most stable configuration has one carbon atom on top of a…

Ab initio calculations indicate that topological-defect networks in graphene display the full variety of single-particle electronic structures, including Dirac-fermion null-gap semiconductors, as well as metallic and semiconducting systems…

介观与纳米尺度物理 · 物理学 2010-09-10 Joice da Silva-Araújo , H. Chacham , R. W. Nunes

Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band…

Dirac-electronic tunneling and nonlinear transport properties with both finite and zero energy bandgap are investigated for graphene with a tilted potential barrier under a bias. For validation, results from a finite-difference based…

介观与纳米尺度物理 · 物理学 2020-04-01 Farhana Anwar , Andrii Iurov , Danhong Huang , Godfrey Gumbs , Ashwani Sharma

Electronic structures of graphene sheet with different defective patterns are investigated, based on the first principles calculations. We find that defective patterns can tune the electronic structures of the graphene significantly.…

介观与纳米尺度物理 · 物理学 2015-05-19 H. Y. He , Y. Zhang , B. C. Pan

In their first-principles calculations of the electronic band structure of graphene under uniaxial strain, Gui, Li, and Zhong [Phys. Rev. B \textbf{78}, 075435 (2008)] have found opening of band gaps at the Fermi level. This finding is in…

材料科学 · 物理学 2009-10-26 M. Farjam , H. Rafii-Tabar

We report a first-principles study on the elastic, vibrational, and electronic properties of recently synthesized phosphorene. By calculating Gr\"uneisen parameters, we evaluate the frequency shift of Raman/infrared active modes via…

介观与纳米尺度物理 · 物理学 2015-03-26 Mohammad Elahi , Kaveh Khaliji , Seyed Mohammad Tabatabaei , Mahdi Pourfath , Reza Asgari

Intensive research has focused on harnessing the potential of graphene for electronic, optoelectronic, and spintronic devices by generating a bandgap at the Dirac point and enhancing the spin-orbit interaction in the graphene layer.…

We study the effects of the uniaxial tensile strain and shear deformation as well as their combinations on the electronic properties of single-layer black phosphorene. The evolutions of the strain-dependent band gap are obtained using the…

Intercalation of epitaxial graphene on SiC(0001) with Sn results in a well-ordered Sn $(1\times1)$ structure on the SiC surface with quasi-freestanding graphene on top. While the electronic properties of the individual layers have been…

The electrons in undoped graphene behave as massless Dirac fermions. Therefore graphene can serve as an unique condensed-matter laboratory for the study of various relativistic effects, including quantum electrodynamics (QED) phenomena.…

介观与纳米尺度物理 · 物理学 2011-11-04 O. V. Kibis , O. Kyriienko , I. A. Shelykh

We theoretically study the effects of electron-electron interaction in twisted bilayer graphene in applied transverse dc electric field. When the twist angle is not very small, the electronic spectrum of the bilayer consists of four Dirac…

强关联电子 · 物理学 2018-07-04 A. O. Sboychakov , A. V. Rozhkov , A. L. Rakhmanov , Franco Nori

Hydrogenation has proven to be an effective tool to open the bandgap of graphene. In the present density functional study we demonstrate that single-side-hydrogenated graphene is a semiconductor with an indirect bandgap of 1.89 eV, in…

材料科学 · 物理学 2011-03-01 Bhalchandra S. Pujari , Sergey Gusarov , Michael Brett , Andriy Kovalenko

Graphene/MoS2 heterostructures are formed by combining the nanosheets of graphene and monolayer MoS2. The electronic features of both constituent monolayers are rather well-preserved in the resultant heterostructure due to the weak van der…

材料科学 · 物理学 2020-02-13 Sobhit Singh , Abdulrhman M. Alsharari , Sergio E. Ulloa , Aldo H. Romero