相关论文: Mn Solid Solutions in Self-Assembled Ge/Si (001) Q…
Self-assembled InAs quantum dots (QDs) grown on GaAs(001) surface by molecular beam epitaxy under continuous and growth-interruption modes exhibit two families of QDs, quasi-3D (Q3D) and 3D QDs, whose volume density evolution is…
Manganese-doped zinc sulfide nanocrystalline thin films were synthesized using a low-temperature chemical bath deposition and deposited on glass substrates for controlled durations using triethanolamine (TEA) as a complexing and capping…
We investigate in detail the self-assembled nucleation and growth of GaN nanowires by molecular beam epitaxy on crystalline TiN films. We demonstrate that this type of substrate allows the growth of long and thin GaN nanowires that do not…
GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs phase separation. Their density is proportional to the density of catalyzing MnAs…
Mn doped GaAs thin films were grown using molecular beam epitaxy at high and low substrate temperatures. The elemental concentration depth profiles in the thin films were determined by using Auger electron spectroscopy combined with ion…
Two-dimensional layered and atomically thin elemental superconductors may be key ingredients in next-generation quantum technologies, if they can be stabilized and integrated into heterostructured devices under ambient conditions. However,…
We have performed a depth profile study of thermally diffused Mn/GaAs (001) interfaces using photoemission spectroscopy combined with Ar$^+$-ion sputtering. We found that Mn ion was thermally diffused into the deep region of the GaAs…
Molecular beam epitaxy of Ge (111) thin films on epitaxial-Gd2O3/Si(111) substrates is reported, along with a systematic investigation of the evolution of Ge growth, and structural defects in the grown epilayer. While Ge growth begins in…
Self-assembled Ge wires with a height of only 3 unit cells and a length of up to 2 micrometers were grown on Si(001) by means of a catalyst-free method based on molecular beam epitaxy. The wires grow horizontally along either the [100] or…
We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-rich SiGe strain-relaxed buffers with a threading…
We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are…
Using ammonia as nitrogen source for molecular beam epitaxy, the GaN-based diluted magnetic semiconductor Ga1-xMnxN is successfully grown with Mn concentration up to x~6.8% and with p-type conductivity. The films have wurtzite structure…
Zinc-based nitride CaZn2N2 films grown by molecular beam epitaxy (MBE) with a plasma-assisted active nitrogen-radical source are promising candidates of next-generation semiconductors for light-emitting diodes and solar cells. This nitride…
Quantum Monte Carlo simulations at zero temperature of an ensemble of He-3 atoms adsorbed on Mg and Alkali substrates yield strong evidence of a thermodynamically stable liquid He-3 monolayer on all Alkali substrates, with the possible…
Ultra-thin films of the electron doped manganite La$_{0.8}$Ce$_{0.2}$MnO$_3$ were grown in a layer-by-layer growth mode on SrTiO$_3$ (001) substrates by pulsed laser interval deposition. High structural quality and surface morphology was…
Antiferromagnetic Mn$_{3}$Ge with a non-collinear Kagome structures present exciting prospects for exploring Berry curvature driven anomalous Hall effects (AHE). Despite substantial progress in bulk systems, the synthesis of crystalline…
Investigations into the magnetic properties of sputtered Mn$_{x}$CoGe films in the range $0.8 \leq x \leq 2.5$ uncovered ferrimagnetic order, unlike the ferromagnetic order reported in bulk samples. These films formed hexagonal…
Ultrafine (2-5 nm) particles of amorphous Ca-Mg co-doped ferrihydrite have been synthesized by surfactant mediated co-precipitation method. The evolution of the amorphous ferrihydrite by Ca-Mg co-doping is quite different from our earlier…
Epitaxial Fe(Te,Se) thin films have been grown on various substrates but never been realized on magnetic layers. Here we report the epitaxial growth of four-fold Fe(Te,Se) film on a six-fold antiferromagnetic insulator, MnTe. The…
We present an atomically resolved study of metal-organic vapor epitaxy grown Mn doped InSb that is ferromagnetic at room-temperature. Both topographic and spectroscopic measurements have been performed by cross-sectional scanning tunneling…