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Electrical transport in polycrystalline and single-crystalline (LaS)1+d(NbS2) misfit-layered compounds was measured. Polycrystalline samples were synthesized using S raw materials of different purities (2N or 6N), and single-crystalline…

超导电性 · 物理学 2025-05-02 Masanori Nagao , Dan Mouri , Yuki Maruyama , Akira Miura , Yoshihiko Takano , Satoshi Watauchi

We report a combined study of transport and thermodynamic measurements on the layered pnictide material SrAg4As2. Upon cooling, a drop in electrical and Hall resistivity, a jump in heat capacity and an increase in susceptibility and…

强关联电子 · 物理学 2018-12-19 Bing Shen , Eve Emmanouilidou , Xiaoyu Deng , Alix McCollam , Jie Xing , Gabriel Kotliar , Amalia I. Coldea , Ni Ni

We investigate the quasiperiodic crystal (LaS)1.196(VS2) by angle and time resolved photoemission spectroscopy. The dispersion of electronic states is in qualitative agreement with band structure calculated for the VS2 slab without the…

Layered transition metal dichalcogenides (TMDs) stabilize in multiple structural forms with profoundly distinct and exotic electronic phases. Interfacing different layer types is a promising route to manipulate TMDs' properties, not only as…

Al(110) has been studied for temperatures up to 900 K via ensemble density-functional molecular dynamics. The strong anharmonicity displayed by this surface results in a negative coefficient of thermal expansion, where the first interlayer…

材料科学 · 物理学 2009-10-31 Nicola Marzari , David Vanderbilt , Alessandro De Vita , M. C. Payne

Vanadium dioxide (VO$_2$) is a strongly-correlated material that exhibits insulator-to-metal transition (IMT) near room temperature, which makes it a promising candidate for applications in nanophotonics or optoelectronics. However,…

The transport properties and electrical bandgap of nominally undoped ~75-nm-thick CrN layers simultaneously grown on AlN(0001) and AlN(11\bar{2}2) templates using plasma-assisted molecular beam epitaxy are investigated. The layers grown on…

材料科学 · 物理学 2025-11-26 Duc V. Dinh , Jens Herfort , Andreas Fiedler , Oliver Brandt

Polarization dependent vanadium L edge X-ray absorption spectra of BaVS$_3$ single crystals are measured in the four phases of the compound. The difference between signals with the polarization \textbf{E}$\perp$\textbf{c} and…

We report a detailed investigation of the structural, electronic, vibrational, and dielectric properties of polycrystalline LaV$_{0.5}$Nb$_{0.5}$O$_4$ samples, prepared at two sintering temperatures (1000\degree C and 1250\degree C). The…

Exploiting the spin-valley degree of freedom of electrons in materials is a promising avenue for energy-efficient information storage and quantum computing. A key challenge in utilizing spin-valley polarization is the realization of…

Albeit structurally and electronically very similar, at low temperature the quasi-one-dimensional vanadium sulfide BaVS3 shows a metal-to-insulator transition via the appearance of a charge-density-wave state, while BaVSe3 apparently…

强关联电子 · 物理学 2015-03-13 Daniel Grieger , Lewin Boehnke , Frank Lechermann

The electronic structure of the quasi-lowdimensional vanadium sulfide \bavs3 is investigated for the different phases above the magnetic ordering temperature. By means of density functional theory and its combination with dynamical-mean…

强关联电子 · 物理学 2009-11-13 Frank Lechermann , Silke Biermann , Antoine Georges

Ultrathin layers of semiconducting molybdenum disulfide (MoS2) offer significant prospects in future electronic and optoelectronic applications. Although an increasing number of experiments bring light into the electronic transport…

介观与纳米尺度物理 · 物理学 2014-07-10 Jing Wu , Hennrik Schmidt , Amara Kiran Kumar , Xiangfan Xu , Goki Eda , Barbaros Özyilmaz

Interlayer coupling is strongly implicated in the complex electronic properties of 1$T$-TaS$_2$ , but the interplay between this and electronic correlations remains unresolved. Here, we employ angle-resolved photoemission spectroscopy…

We investigate transport through ionic liquid gated field effect transistors (FETs) based on exfoliated crystals of semiconducting WS$_2$. Upon electron accumulation, at surface densities close to -or just larger than- 10$^{14}$ cm$^{-2}$,…

介观与纳米尺度物理 · 物理学 2015-01-27 Sanghyun Jo , Davide Costanzo , Helmuth Berger , Alberto F. Morpurgo

BaPd2As2 belongs to 122 pnictide group, famous for exhibiting superconductivity at high temperatures and other electronic correlations. Unlike the 122 iron arsenides, BaPd2As2 exhibits superconductivity at low temperature when realized in…

超导电性 · 物理学 2018-10-31 F. Parvin , S. H. Naqib

We report results regarding the electron transport in vertical quasi-2D layered 1T-TaS2 charge-density-wave devices. The low-frequency noise spectroscopy was used as a tool to study changes in the cross-plane electrical characteristics of…

We report a configuration strategy for improving the thermoelectric (TE) performance of two-dimensional (2D) transition metal dichalcogenide (TMDC) WS2 based on the experimentally prepared WS2/WSe2 lateral superlattice (LS) crystal. On the…

材料科学 · 物理学 2022-07-27 Yonglan Hu , Tie Yang , Dengfeng Li , Guangqian Ding , Chaochao Dun , Dandan Wu , Xiaotian Wang

We measure transport through a Ga[Al]As heterostructure at temperatures between 0.1 K and 30 K. Increasing the temperature enhances the electron-electron scattering rate and viscous effects in the two-dimensional electron gas arise. To…

The commensurate charge-density-wave phase of the prototypical transition metal dichalcogenide $1T$-TaS$_2$ is investigated by temperature- and polarization-dependent infrared spectroscopy, revealing distinct charge dynamics parallel and…

强关联电子 · 物理学 2026-01-21 Achyut Tiwari , Maxim Wenzel , Renjith Mathew Roy , Christian Prange , Bruno Gompf , Martin Dressel
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