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相关论文: Tunable Band Structures of Polycrystalline Graphen…

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We investigate band-gap tuning of bilayer graphene between hexagonal boron nitride sheets, by external electric fields. Using density functional theory, we show that the gap is continuously tunable from 0 to 0.2 eV, and is robust to…

材料科学 · 物理学 2015-05-20 Ashwin Ramasubramaniam , Doron Naveh , ELias Towe

Graphene was deposited on a transparent and flexible substrate and tensile strain up to ~0.8% was loaded by stretching the substrate in one direction. Raman spectra of strained graphene show significant redshifts of 2D and G band (-27.8…

材料科学 · 物理学 2008-10-21 Zhen Hua Ni , Ting Yu , Yun Hao Lu , Ying Ying Wang , Yuan Ping Feng , Ze Xiang Shen

We induced periodic biaxial tensile strain in polycrystalline graphene by wrapping it over a substrate with repeating pillar-like structures with a periodicity of 600 nm. Using Raman spectroscopy, we determined to have introduced biaxial…

The electronic properties of a material depend on the spatial freedom of the electron wavefunction. A well-known example is graphite, which is a conventional gapless semiconductor, while a single layer of it, graphene, exhibits extremely…

介观与纳米尺度物理 · 物理学 2026-01-28 Mohammadamir Bazrafshan , Thomas. D. Kühne

Grain boundaries (GBs) are ubiquitous in polycrystalline graphene materials obtained by various growth methods. It has been shown previously that considerable electrical transport gap can be opened by grain boundaries. On the other hand,…

介观与纳米尺度物理 · 物理学 2012-08-31 S. Bala Kumar , Jing Guo

The band structures of strained graphene nanoribbons (GNRs) are examined by a tight binding Hamiltonian that is directly related to the type and strength of strains. Compared to the two-dimensional graphene whose band gap remains close to…

介观与纳米尺度物理 · 物理学 2010-01-20 Yang Lu , Jing Guo

We show that, if graphene is subjected to the potential from an external superlattice, a band gap develops at the Dirac point provided the superlattice potential has broken inversion symmetry. As a numerical example, we calculate the band…

介观与纳米尺度物理 · 物理学 2015-05-13 Rakesh P Tiwari , D. Stroud

In this study, we highlight the potential of strain engineering in graphene/hBN (hexagonal Boron nitride) 2D heterostructures, enabling their use as wide-range light absorbers with significant implications for optoelectronic applications.…

介观与纳米尺度物理 · 物理学 2024-07-17 Priyanka Sinha , Prasanta K. Panigrahi , Bheemalingam Chittari

We present atomistic calculations on structural and electronic properties of twisted double bilayer graphene (TDBG) consisting of two sets of rotationally misaligned Bernal-stacked bilayer graphene. Obtained equilibrium atomic structures…

介观与纳米尺度物理 · 物理学 2019-11-20 Young Woo Choi , Hyoung Joon Choi

As most materials available in macroscopic quantities, graphene appears in a polycrystalline form and thus contains grain boundaries. In the present work, the effect of uniaxial strain on the electronic transport properties through graphene…

介观与纳米尺度物理 · 物理学 2016-06-07 Viet Hung Nguyen , Trinh Xuan Hoang , Philippe Dollfus , Jean-Christophe Charlier

Electronic structures of graphene sheet with different defective patterns are investigated, based on the first principles calculations. We find that defective patterns can tune the electronic structures of the graphene significantly.…

介观与纳米尺度物理 · 物理学 2015-05-19 H. Y. He , Y. Zhang , B. C. Pan

Band gap control by an external field is useful in various optical, infrared and THz applications. However, widely tunable band gaps are still not practical due to variety of reasons. Using the orthogonal tight-binding method for…

介观与纳米尺度物理 · 物理学 2017-05-03 V. A. Saroka , K. G. Batrakov , V. A. Demin , L. A. Chernozatonskii

We study the effect of strain on the band engineering in gapped graphene subject to external sources. By applying the Floquet theory, we determine the effective Hamiltonian of electron dressed by a linearly, circularly and an elliptically…

介观与纳米尺度物理 · 物理学 2021-04-02 Hasna Chnafa , Miloud Mekkaoui , Ahmed Jellal , Abdelhadi Bahaoui

Density functional theory (DFT) and many body perturbation theory at the G$_0$W$_0$ level are employed to study the electronic properties of polythiophene (PT) adsorbed on graphene surface. Analysis of charge density difference shows the…

介观与纳米尺度物理 · 物理学 2017-09-07 F. Marsusi , I. A. Fedorov , S. Gerivani

Graphene holds great promise for post-silicon electronics, however, it faces two main challenges: opening up a bandgap and finding a suitable substrate material. In principle, graphene on hexagonal boron nitride (hBN) substrate provides…

介观与纳米尺度物理 · 物理学 2011-10-27 Neerav Kharche , Saroj K. Nayak

Using first-principles full-potential density functional calculations, we predict that mechanically tunable band-gap is realizable in ZnS monolayer in graphene-like honeycomb structure by application of in-plane homogeneous biaxial strain.…

材料科学 · 物理学 2012-10-12 Harihar Behera , Gautam Mukhopadhyay

We study the effects of the uniaxial tensile strain and shear deformation as well as their combinations on the electronic properties of single-layer black phosphorene. The evolutions of the strain-dependent band gap are obtained using the…

The effect of grain boundaries and wrinkles on the electrical properties of polycrystalline graphene is pronounced. Here we investigate the stitching between grains of polycrystalline graphene, specifically, overlapping of layers at the…

材料科学 · 物理学 2014-06-09 Rahul Rao , Neal Pierce , Avetik R. Harutyunyan

Due to low dimensionality, the controlled stacking of the graphene films and their electronic properties are susceptible to environmental changes including strain. The strain-induced modification of the electronic properties such as the…

介观与纳米尺度物理 · 物理学 2020-11-10 Zahra Khatibi , Afshin Namiranian , Fariborz Parhizgar

Strain induced band gap deformations of hydrogenated/fluorinated graphene and hexagonal BN sheet have been investigated using first principles density functional calculations. Within harmonic approximation, the deformation is found to be…

材料科学 · 物理学 2015-05-27 A. Bhattacharya , S. Bhattacharya , G. P. Das
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