相关论文: Coupling the valley degree of freedom to antiferro…
Valley polarization and altermagnetism are two emerging fundamental phenomena in condensed matter physics, offering unprecedented opportunites for information encoding and processing in novel energy-efficient devices. By coupling valley and…
The emerging field of valleytronics harnesses the valley degree of freedom of electrons, akin to how electronic and spintronic devices utilize the charge and spin degrees of freedom of electrons respectively. The engineering of valleytronic…
In graphene, the pseudospin and the valley flavor arise as new types of quantum degrees of freedom due to the honeycomb lattice comprising two sublattices (A and B) and two inequivalent Dirac points (K and K') in the Brillouin zone,…
Valley, the energy extrema in the electronic band structure at momentum space, is regarded as a new degree of freedom of electrons, in addition to charge and spin. The studies focused on valley degree of freedom now form an emerging field…
The electron's charge and spin degrees of freedom are at the core of modern electronic devices. With the in-depth investigation of two-dimensional materials, another degree of freedom, valley, has also attracted tremendous research…
A twisted honeycomb bilayer exhibits a moir\'e superstructure that is composed of a hexagonal arrangement of AB and BA stacked domains separated by domain boundaries. In the case of twisted bilayer graphene, the application of an electric…
The spin-orbit coupling in the absence of spatial inversion symmetry plays an important role in realizing intriguing electronic states in solids, such as topological insulators and unconventional superconductivity. Usually, the inversion…
Here we theoretically investigate the valley-dependent transmission of particles through a combined electric and magnetic barrier in the $\alpha-T_3$ model which interpolates between the honeycomb and the dice lattices. We put forward that…
Electrons in graphene have fourfold spin and valley degeneracies owing to the unique bipartite honeycomb lattice and an extremely weak spin-orbit coupling, which can support a series of broken symmetry states. Atomic-scale defects in…
We study topological states of honeycomb photonic crystals in absence of inversion symmetry using plane wave expansion and finite element methods. The breaking of inversion symmetry in honeycomb lattice leads to contrasting topological…
We investigate the optical properties in a minimal model of spin-orbit coupled systems on honeycomb lattice at half-filling. The absorption of the circularly polarized light in the charge and antiferromagnetic ordered states is particularly…
Valley-based electronics, known as valleytronics, is one of the keys to break through to a new stage of electronics. The valley degree of freedom is ubiquitous in the honeycomb lattice system. The honeycomb lattice structure of silicon…
Altermagnets provide promising platforms for unconventional magnetism, whose controllability would enable a whole new generation of spintronic devices. While a variety of bulk altermagnets have been discovered, altermagnetism in…
The switching of antiferromagnetic order and its efficient control promise to enable ultrafast manipulation of data and large storage capacity. Recently, the time-dependent Schwinger boson mean-field theory has been successfully developed…
Antiferromagnetic and ferro/ferrimagnetic orders are typically exclusive in nature, thus, their co-existence in atomic-scale proximity is expected only in heterostructures. Breaking this paradigm and broadening the range of unconventional…
To date, a number of valley materials have been discovered with the spin-valley or valley-layer couplings. It is highly desirable to realize the interplay of more electronic degrees of freedom in a valley material. Based on the…
We report the experimental and theoretical characterization of the angular-dependent spin dynamics in arrays of ferromagnetic nanodisks arranged on a honeycomb lattice. The magnetic field and microwave frequency dependence, measured by…
We investigate physical properties that can be used to distinguish the valley degree of freedom in systems where inversion symmetry is broken, using graphene systems as examples. We show that the pseudospin associated with the valley index…
In a number of widely-studied materials, such as Si, AlAs, Bi, graphene, MoS2, and many transition metal dichalcogenide monolayers, electrons acquire an additional, spin-like degree of freedom at the degenerate conduction band minima, also…
Valleytronics targets the exploitation of the additional degrees of freedom in materials where the energy of the carriers may assume several equal minimum values (valleys) at non-equivalent points of the reciprocal space. In single layers…