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相关论文: Bilayer Twisted Hubbard Model for Sr3Ir2O7

200 篇论文

We present a theoretical study of single-particle and many-body properties of twisted bilayer WSe$_2$. For single-particle physics, we calculate the band topological phase diagram and electron local density of states (LDOS), which are found…

强关联电子 · 物理学 2020-07-29 Haining Pan , Fengcheng Wu , Sankar Das Sarma

Using resonant x-ray diffraction, we observe an easy c-axis collinear antiferromagnetic structure for the bilayer Sr$_3$Ir$_2$O$_7$, a significant contrast to the single layer Sr$_2$IrO$_4$ with in-plane canted moments. Based on a…

强关联电子 · 物理学 2012-12-11 J. W. Kim , Y. Choi , Jungho Kim , J. F. Mitchell , G. Jackeli , M. Daghofer , J. van den Brink , G. Khaliullin , B. J. Kim

We use determinant Quantum Monte Carlo simulations and exact diagonalization to explore insulating behavior in the Hubbard model with a bimodal distribution of randomly positioned local site energies. From the temperature dependence of the…

强关联电子 · 物理学 2007-07-10 N. Paris , A. Baldwin , R. T. Scalettar

Since the very recent discovery of unconventional superconductivity in twisted WSe$_2$ homobilayers at filling $\nu=-1$, considerable interest has arisen in revealing its mechanism. In this paper, we developed a three-band tight-binding…

强关联电子 · 物理学 2025-11-03 Chuyi Tuo , Ming-Rui Li , Zhengzhi Wu , Wen Sun , Hong Yao

In bilayers of semiconducting transition metal dichalcogenides, the twist angle between layers can be used to introduce a highly regular periodic potential modulation on a length scale that is large compared to the unit cell. In such…

材料科学 · 物理学 2022-04-27 N. Götting , F. Lohof , C. Gies

We propose a general theory of anisotropic band flattening in moir\'e systems at the $\Gamma$ valley. For a two-dimensional semiconductor with a rectangular unit cell of $C_{2z}$ or mirror symmetries, we find that a larger effective mass…

介观与纳米尺度物理 · 物理学 2023-12-01 Huan Wang , Zhaochen Liu , Yadong Jiang , Jing Wang

On the basis of the multi-orbital dynamical mean field theory, a three-orbital Hubbard model with a relativistic spin-orbit coupling (SOC) is studied at five electrons per site. The numerical calculations are performed by employing the…

强关联电子 · 物理学 2015-06-23 Toshihiro Sato , Tomonori Shirakawa , Seiji Yunoki

Moir\'e superlattices have emerged as an exciting condensed-matter quantum simulator for exploring the exotic physics of strong electronic correlations. Notable progress has been witnessed, but such correlated states are achievable usually…

We have investigated the electronic structure of Sr2IrO4 within the density-functional theory using the generalized gradient approximation while taking into account strong Coulomb correlations in the framework of the fully relativistic…

强关联电子 · 物理学 2023-10-13 V. N. Antonov , D. A. Kukusta , L. V. Bekenov

We propose twisted homobilayer of a carbon allotrope, C$_{568}$, to be a promising platform to realize controllable square lattice single-band extended Hubbard model. This setup has the advantage of a widely tunable $t'/t$ ratio without…

强关联电子 · 物理学 2025-09-11 Toshikaze Kariyado , Ashvin Vishwanath , Zhu-Xi Luo

Neutron diffraction measurements are presented exploring the magnetic and structural phase behaviors of the candidate J$_{eff}=1/2$ Mott insulating iridate Sr$_2$IrO$_4$. Comparisons are drawn between the correlated magnetism in this single…

The exact diagonalization and the variational cluster approximation (VCA) are used to study the nature of a novel Mott insulator induced by a strong spin-orbit coupling for a two-dimensional three-band Hubbard model consisting of the…

强关联电子 · 物理学 2014-11-24 Tomonori Shirakawa , Hiroshi Watanabe , Seiji Yunoki

Since the discovery of superconductivity and correlated insulator at fractional electron fillings in the twisted bilayer graphene, most theoretical efforts have been focused on describing this system in terms of an effective extended…

强关联电子 · 物理学 2019-04-24 Xiao-Chuan Wu , Chao-Ming Jian , Cenke Xu

We investigated the electronic and magnetic structure of Sr$_{3-x}$Ca$_x$Ru$_2$O$_7$ ($0 \leq x \leq 3$) on the basis of the double-layered three-dimensional multiband Hubbard model with spin-orbit interaction. In our model, lattice…

强关联电子 · 物理学 2011-11-15 Shigeru Koikegami , Takashi Yanagisawa , Soh Koike

Recently there has been a renewed interest in properties of the higher-spin Kitaev models, especially their low-dimensional analogues with additional interactions. These quasi-1D systems exhibit rich phase diagrams with symmetry-protected…

强关联电子 · 物理学 2022-04-12 Jacob S. Gordon , Hae-Young Kee

The combination of strong spin-orbit coupling and Coulomb interactions makes the $5d$ iridates a unique platform for realizing novel correlated electronic states. Here, utilizing infrared spectroscopy, we demonstrate that a robust Mott…

强关联电子 · 物理学 2026-03-06 Kai Wang , Jun Yang , Chaoyang Kang , Weikang Wu , Wenka Zhu , Jianzhou Zhao , Yaomin Dai , Bing Xu

Two-dimensional multi-layer materials with an induced moir\'e pattern, either due to strain or relative twist between layers, provide a versatile platform for exploring strongly correlated and topological electronic phenomena. While these…

强关联电子 · 物理学 2025-05-27 Mohammed M. Al Ezzi , Albert Zhu , Daniel Bennett , Daniel T. Larson , Efthimios Kaxiras

Candidates for correlated topological insulators, originated from the spin-orbit coupling as well as Hubbard type correlation, are expected in the ($111$) bilayer of perovskite-structural transition-metal oxides. Based on the…

材料科学 · 物理学 2015-11-11 Yakui Weng , Xin Huang , Yugui Yao , Shuai Dong

Topological magnetism, characterized by topologically protected spin textures, offers rich physics and transformative prospects for spintronics. However, its stabilization typically demands external magnetic fields, preventing…

材料科学 · 物理学 2026-03-06 Zhonglin He , Kaiying Dou , Wenhui Du , Ying Dai , Evgeny Y. Tsymbal , Yandong Ma

We report on a temperature-driven reversible change of the in-plane magnetic anisotropy of V$_2$O$_3$/Ni bilayers. This is caused by the rhombohedral to monoclinic structural phase transition of V$_2$O$_3$ at $T_C$ = 160 K. The in-plane…