相关论文: Direct observation of a highly spin-polarized orga…
Integrated electrical and photonic circuits (PIC) operating at cryogenic temperatures are fundamental building blocks required to achieve scalable quantum computing, and cryogenic computing technologies. Optical interconnects offer better…
Recent studies on the magneto-transport properties of topological insulators (TI) have attracted great attention due to the rich spin-orbit physics and promising applications in spintronic devices. Particularly the strongly spin-moment…
Interfaces play a substantial role for the functional properties of structured magnetic materials and magnetic multilayers. Modeling the functional behavior of magnetic materials requires the treatment of the relevant phenomena at the…
Injecting spins into a semiconductor channel and transforming the spin information into a significant electrical output signal is a long standing problem in spintronics. Actually, this is the prerequisite of several concepts of spin…
We investigate the spin injection and the spin transport in paramagnetic insulators described by simple Heisenberg interactions using auxiliary particle methods. Some of these methods allow access to both paramagnetic states above magnetic…
Proximity-induced magnetization (PIM) has broad implications across interface-driven spintronics applications employing spin-currents. We directly determine the scaling between PIM in Pt and the temperature-dependent interface magnetization…
Carrier spins in semiconductor nanocrystals are promising candidates for quantum information processing. Using a combination of time-resolved Faraday rotation and photoluminescence spectroscopies, we demonstrate optical spin polarization…
Spontaneous spin polarization of the electrical current flowing through nonmagnetic semiconductor junctions can be generated by carrier scattering processes that are independent of the carrier spin. The two required elements for…
Semiconductor point contacts can be a useful tool for producing spin-polarized currents in the presence of spin-orbit (SO) interaction. Neither magnetic fields nor magnetic materials are required. By numerical studies, we show that (i) the…
Ballistic hot electron transport overcomes the well-known problems of conductivity and spin lifetime mismatch that plagues spin injection in semiconductors with ferromagnetic ohmic contacts. Through the spin-dependent mean-free-path, it…
A theoretical study of the low-energy scattering properties of two aligned identical bosonic and fermionic dipoles in the presence of isotropic spin-orbit coupling (SOC) is presented. A general treatment of particles with arbitrary…
The unique properties of organic semiconductors make them versatile base materials for many applications ranging from light emitting diodes to transistors. The low spin-orbit coupling typical for carbon-based materials and the resulting…
The electronic transport and spincaloric properties of epitaxial magnetic tunnel junctions with half-metallic Co$_2$MnSi Heusler electrodes, MgO tunneling barriers, and different interface terminations are investigated by using…
We investigate the diffusive electron transport in conductors with spatially inhomogeneous magnetic properties taking into account both impurity and normal scattering. It is found that the additional interface resistance that arises due to…
The large spin orbit interaction in rare earth atoms implies a strong coupling between their charge and spin degrees of freedom. We formulate the coupling between voltage and the local magnetic moments of rare earth atoms with partially…
We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free…
The finite spin lifetime in solids is often considered a major hindrance for the development of spintronic devices, which typically require cryogenic temperatures to mitigate this phenomenon. In this work we show that this feature can…
A method for Monte Carlo simulation of 2D spin-polarized electron transport in III-V semiconductor heterojunction FETs is presented. In the simulation, the dynamics of the electrons in coordinate and momentum space is treated…
A novel method invented to measure the minute thermodynamic spin magnetization of dilute two dimensional fermions is applied to electrons in a silicon inversion layer. Interplay between the ferromagnetic interaction and disorder enhances…
Spin transport phenomena underpin an extensive range of spintronic effects. In particular spin transport across interfaces occurs in most device concepts, but is so far poorly understood. As interface properties strongly impact spin…