相关论文: Spin-torque ac impedance in magnetic tunnel juncti…
We study the combined effects of spin transfer torque, voltage modulation of interlayer exchange coupling and magnetic anisotropy on the switching behavior of perpendicular magnetic tunnel junctions (p-MTJs). In asymmetric p-MTJs, a…
We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect,…
Interplay between magnetization dynamics and electric current in a conducting ferromagnet is theoretically studied based on a microscopic model calculation. First, the effects of the current on magnetization dynamics (spin torques) are…
Many exotic properties in rhombohedral (or ABC-stacked) multilayer graphene have recently been reported experimentally. In this Letter, we first reveal the underlying mechanism of spin degeneracy lifting in rhombohedral trilayer graphene.…
Heavy metals with strong spin-orbit coupling (SOC) have been employed to generate spin current to control the magnetization dynamics by spin-orbit torque (SOT). Magnetic tunnel junction based on SOT (SOT-MTJ) is a promising application with…
Current-induced spin-orbit torques provide a versatile tool for switching magnetic devices. In perpendicular magnets, the dampinglike component of the torque is the main driver of magnetization reversal. The degree to which the fieldlike…
Spin-torque nano-oscillators (STNOs) are promising nanoscale microwave sources for spintronic applications, serving as signal generators or elements in neuromorphic computing systems. In this paper, we investigate the experimental…
The spin-transfer effect has been studied in magnetic tunnel junctions (PtMn/CoFe/Ru/CoFe/Al2O3/CoFe/NiFe) with dimensions down to 0.1x0.2 um2 and resistance-area product RA in the range of 0.5-10 Ohm m2 (dR/R=1-20%). Current-induced…
We calculate the efficiency with which magnetic tunnel junctions can be used as resonant detectors of incident microwave radiation via the spin-torque diode effect. The expression we derive is in good agreement with the sensitivities we…
A general expression of the current induced spin torque in a magnetic layered structure in the presence of external dc or ac voltages is derived in the framework of the scattering matrix approach. A detailed analysis is performed for a…
Magnetic tunnel junctions are nanoscale spintronic devices with microwave generation and detection capabilities. Here we use the rectification effect called "spin-diode" in a magnetic tunnel junction to wirelessly detect the microwave…
The tunnel magnetoresistance (TMR) of F/O/F magnetic junctions, (F's are ferromagnetic layers and O is an oxide spacer) in the presence of magnetic impurities within the barrier, is investigated. We assume that magnetic couplings exist both…
We consider a Josephson junction where the weak-link is formed by a non-centrosymmetric ferromagnet. In such a junction, the superconducting current acts as a direct driving force on the magnetic moment. We show that the a.c. Josephson…
Based on the non-equilibrium Green's function (NEGF) technique and the Landauer-B\"{u}ttiker theory, the possibility of a molecular spin-electronic device, which consists of a single C$_{60}$ molecule attached to two ferromagnetic…
We present a theory for resonance-tunneling magnetoresistance (MR) in Ferromagnetic-Insulator-Nonmagnetic junctions. The theory sheds light on many of the recent electrical spin injection experiments, suggesting that this MR effect rather…
We report the observation and micromagnetic analysis of current-driven magnetization switching in nanoscale ring-shaped magnetic tunnel junctions. When the electric current density exceeds a critical value of the order of $6\times…
In metallic ferromagnets, an electric current is accompanied by a flux of angula r momentum, also called spin current. In multilayers, spatial variations of the spin current correspond to drive torques exerted on a magnetic layer. These…
We derive an expression for the spin-current through a tunnel barrier in terms of many-body Green's functions. The spin current has two contributions. One can be associated with angular-momentum transfer by spin-polarized charge currents…
Injection of spins into semiconductors is essential for the integration of the spin functionality into conventional electronics. Insulating layers are often inserted between ferromagnetic metals and semiconductors for obtaining an efficient…
Magnetic tunnel junctions (MTJs) based on ferromagnets are canonical devices in spintronics, with wide-ranging applications in data storage, computing, and sensing. They simultaneously exhibit mechanisms for electrical detection of magnetic…