相关论文: Gate voltage control over spin relaxation length

Gate geometry and bias asymmetry can be used to engineer spin dynamics in gate-defined Ge hole quantum dots by reshaping the confinement potential and driving transitions between distinct confinement regimes. In this work, we show that…

We show that Rashba spin-orbit coupling may result in an energy gap in the spectrum of electrons in a two-mode quantum wire if a suitable confining potential is chosen. This leads to a dip in the conductance and a spike in the spin current…

We investigate the formation of the one-dimensional channels on the topological surface under the gate electrode. The energy dispersion of these channels is almost linear in the momentum with the velocity sensitively depending on the…

Spin related phenomena in quantum nanostructures have attracted recently much interest due to fast growing field of spintronics. In particular complex nanostructures are important as they provide a versatile system to manipulate spin and…

We demonstrate a substantial improvement in the spin-exchange gate using symmetric control instead of conventional detuning in GaAs spin qubits, up to a factor-of-six increase in the quality factor of the gate. For symmetric operation,…

We propose a scheme to manipulate the spin relaxation in vertically coupled semiconductor double quantum dots. Up to {\em twelve} orders of magnitude variation of the spin relaxation time can be achieved by a small gate voltage applied…

We study spin transport in normal/ferromagnetic/normal graphene junctions where a gate electrode is attached to the ferromagnetic graphene. We find that due to the exchange field of the ferromagnetic graphene, spin current through the…

The elimination of extrinsic sources of spin relaxation is key in realizing the exceptional intrinsic spin transport performance of graphene. Towards this, we study charge and spin transport in bilayer graphene-based spin valve devices…

A recently discovered mechanism of electric dipole spin resonance, mediated by the hyperfine interaction, is investigated experimentally and theoretically. The effect is studied using a spin-selective transition in a GaAs double quantum…

We investigate electrically-induced spin currents generated by the spin Hall effect in GaAs structures that distinguish edge effects from spin transport. Using Kerr rotation microscopy to image the spin polarization, we demonstrate that the…

We present numerical results for electron spin relaxation rates for single and laterally coupled double GaAs quantum dots in a perpendicular magnetic field. As source of spin relaxation we consider hyperfine interaction with the nuclear…

We experimentally study the electronic spin transport in hBN encapsulated single layer graphene nonlocal spin valves. The use of top and bottom gates allows us to control the carrier density and the electric field independently. The spin…

We study electron spin dynamics whose movement is restricted to the lowest one dimensional subband channel ($G \le 2e^2/h $), through nuclear spin relaxation rate measurement ($1/T_1$). We observe an unusual double-peak structure in the…

The introduction of a strong Rashba spin orbit coupling (SOC) had been predicted to enhance the spin motive force (SMF) [see Phys. Rev. Lett. {\bf 108}, 217202 (2012)]. In this work, we predict further enhancement of the SMF by time…

We investigate the spin relaxation induced by acoustic phonons in the presence of spin-orbit interactions in single electron Si/SiGe lateral coupled quantum dots. The relaxation rates are computed numerically in single and double quantum…

Recently, the chiral-induced spin selectivity in molecular systems has attracted extensive interest among the scientific communities. Here, we investigate the effect of the gate voltage on spin-selective electron transport through the…

We propose and investigate a spin transistor device consisting of two ferromagnetic leads connected by a two-dimensional topological insulator as the channel material. It exploits the unique features of the topological spin-helical edge…

We show that the interaction constant governing the long-range electron-electron interaction in a quantum wire coupled to two reservoirs and capacitively coupled to a gate can be determined by a low frequency measurement. We present a…

In trapped-ion quantum computers, two-qubit entangling gates are generated by applying spin-dependent force which uses phonons to mediate interaction between the internal states of the ions. To maintain high-fidelity two-qubit gates under…

Spin and orbital freedoms of electrons traveling on spin-resolved quantum Hall edge states (quantum Hall ferromagnets) are maximally entangled. The unitary operations on these two freedoms are hence equivalent, which means one can…