相关论文: Threading dislocation densities in semiconductor c…
Spin precession and dephasing ("Hanle effect") provides an unambiguous means to establish the presence of spin transport in semiconductors. We compare theoretical modeling with experimental data from drift-dominated silicon spin-transport…
Plastic deformation in metallic glasses at room temperature leads to the development of shear bands due to shear localization. In many experiments, shear bands have shown local density variations along their path, with a distinct imbalance…
The bulk distribution of the topological charge density, constructed via HP^1 sigma-model embedding method, is investigated. We argue that the specific pattern of leading power corrections to gluon condensate hints on a particular UV…
Dislocations, line defects in crystalline materials, play an essential role in the mechanical[1,2], electrical[3], optical[4], thermal[5], and phase transition[6] properties of these materials. Dislocation motion, an important mechanism…
This paper investigates the scattering states of spin-1/2 particles in the spacetime of a spinning cosmic string with spacelike disclination and dislocation, with and without a Coulomb interaction. Working within the tetrad formalism, we…
We study the electronic properties of the glide set of dislocations in diamond from first principles using hybrid exchange correlation functionals and find that the atomic-scale dislocation core states give rise to a prototypical…
The term Weyl semimetal originates from the fact that its energy dispersion obeys a Weyl equation. However, a Weyl equation itself cannot fully describe the electron states in an actual bounded geometry. For example, the appearance of…
In this paper a we derive by means of $\Gamma$-convergence a macroscopic strain-gradient plasticity from a semi-discrete model for dislocations in an infinite cylindrical crystal. In contrast to existing work, we consider an energy with…
Understanding scattering mechanisms in semiconductor heterostructures is crucial to reducing sources of disorder and ensuring high yield and uniformity in large spin qubit arrays. Disorder of the parent two-dimensional electron or hole gas…
Altermagnets recently came into the spotlight as a new class of magnetic materials, arising as a consequence of specific crystal symmetries. They are characterized by a spin-polarized electronic band structure similar to ferromagnets, but…
A recently developed formula for the Hall coefficient [A. Auerbach, Phys. Rev. Lett. 121, 66601 (2018)] is applied to nodal line and Weyl semimetals (including graphene), and to spin-orbit split semiconductor bands in two and three…
Understanding crack tip - dislocation interaction is critical for improving the fracture resistance of semi-brittle materials like room-temperature plastically deformable ceramics. Here, we use a modified double cleavage drilled compression…
We consider the role of static disorder in the spin sector of the one- and two-channel Kondo models. The distribution functions of the disorder-induced effective energy splitting between the two levels of the Kondo impurity are derived to…
Conventional discrete-to-continuum approaches have seen their limitation in describing the collective behaviour of the multi-polar configurations of dislocations, which are widely observed in crystalline materials. The reason is that…
At low densities, electrons confined to two dimensions in a delta-doped heterostructure can arrange themselves into self-consistent droplets due to disorder and screening effects. We use this observation to show that at low temperatures,…
We report on numerical simulations of the intrinsic spin Hall effect in semiconductor quantum wires as a function of the Rashba spin-orbit coupling strength, the electron density, and the width of the wire. We find that the strength of the…
Dislocations in ductile ceramics offer the potential for robust mechanical performance while unlocking versatile functional properties. Previous studies have been limited by small volumes with dislocations and/or low dislocation densities…
The localization of electrons caused by atomic disorder is a well-known phenomenon. However, what circumstances allow electrons to remain delocalized and retain band-like characteristics even when the crystal structure is completely absent,…
Using a TE/TM decomposition for an angular plane-wave spectrum of free random electromagnetic waves and matched boundary conditions, we derive the probability density function for the energy density of the vector electric field in the…
A low-cost method to reduce the threading disloca-tions density (TDD) in relaxed germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si sub-strate was treated with post epitaxial process to create a region with a high…