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The effect of external static charging on borophenes - 2D boron crystals - is investigated by using first principles calculations. The influence of the excess negative charge on the stability of the 2D structures is examined using a very…

材料科学 · 物理学 2021-09-21 T. Tarkowski , J. A. Majewski , N. Gonzalez Szwacki

The electrical evaluation of the crystallinity of hexagonal boron nitride (h-BN) is still limited to the measurement of dielectric breakdown strength, in spite of its importance as the substrate for 2-dimensional van der Waals…

材料科学 · 物理学 2018-01-29 Y. Hattori , T. Taniguchi , K. Watanabe , K. Nagashio

Recent progress in preparing well controlled 2D van der Waals heterojunctions has opened up a new frontier in materials physics. In this paper we address the intriguing energy gaps that are sometimes observed when a graphene sheet is placed…

介观与纳米尺度物理 · 物理学 2015-02-23 Jeil Jung , Ashley DaSilva , Allan H. MacDonald , Shaffique Adam

Hexagonal boron nitride is an emerging two-dimensional material with far-reaching applications in fields like nanophotonics or nanomechanics. Its layered architecture plays a key role for new materials such as Van der Waals…

量子物理 · 物理学 2022-02-01 Alexander Kubanek

Hexagonal boron nitride (hBN) supports a wide range of two-dimensional (2D) technologies, yet assessing its crystalline quality over large areas remains a fundamental challenge. Both antiparallel domains, an intrinsic outcome of epitaxy on…

The corrosion of metallic surfaces poses significant challenges across industries such as petroleum, energy, and biomedical sectors, leading to structural degradation, safety risks, and substantial maintenance costs. Traditional organic and…

The thermoelectric properties of in plane heterostructures made of Graphene and hexagonal Boron Nitride (BN) have been investigated by means of atomistic simulation. The heterostructures consist in armchair graphene nanoribbons to the sides…

介观与纳米尺度物理 · 物理学 2015-08-19 Van-Truong Tran , Jérôme Saint Martin , Philippe Dollfus

A first-principles investigation of the electronic properties of boron nitride nanoribbons (BNNRs) having either armchair or zigzag shaped edges passivated by hydrogen with widths up to 10 nm is presented. Band gaps of armchair BNNRs…

材料科学 · 物理学 2008-08-14 Cheol-Hwan Park , Steven G. Louie

Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has emerged as an essential material for the encapsulation layer in van der Waals heterostructures and efficient deep ultra-violet optoelectronics. This is primarily due to…

应用物理 · 物理学 2024-09-16 Suk Hyun Kim , Kyeong Ho Park , Young Gie Lee , Seong Jun Kang , Yongsup Park , Young Duck Kim

Dielectrics are insulating materials used in many different electronic devices and play an important role in all of them. Current advanced electronic devices use dielectric materials with a high dielectric constant and avoid high leakage…

应用物理 · 物理学 2019-05-17 Fei Hui

The growth of monolayer hexagonal boron nitride (h-BN) on Ir(110) through low-pressure chemical vapor deposition is investigated using low energy electron diffraction and scanning tunneling microscopy. We find that the growth of aligned…

材料科学 · 物理学 2024-02-16 Thomas Michely , Jason Bergelt , Affan Safeer , Alexander Bäder , Tobias Hartl , Jeison Fischer

We report three-dimensional (3D) structure determination of a twisted hexagonal boron nitride (h-BN) heterointerface from a single-view data set using multislice ptychography. We identify the buried heterointerface between two twisted h-BN…

The integrated inplane growth of two dimensional materials with similar lattices, but distinct electrical properties, could provide a promising route to achieve integrated circuitry of atomic thickness. However, fabrication of edge specific…

Monolayer of hexagonal boron nitride (h-BN), commonly known as "white graphene" is a promising wide bandgap semiconducting material for deep-ultaviolet optoelectronic devices. In this report, the light absorption of a single layer hexagonal…

介观与纳米尺度物理 · 物理学 2011-09-26 Aniruddha Konar , Raj Jana , Tian Fang , Guowang Li , William O'Brien , Debdeep Jena

The strong excitonic emission at 5.75 eV of hexagonal boron nitride (h-BN) makes this material one of the most promising candidate for light emitting devices in the far ultraviolet (UV). However, single excitons occur only in perfect…

Graphene nanoribbons (GNRs) are promising two-dimensional materials with various technological applications, in particular for the armchair GNR families that have a semiconductor character. Recently, methods that allowed for the control of…

Atomically thin boron nitride (BN) is an important two-dimensional (2D) nanomaterial, with many properties distinct from graphene. In this feature article, these unique properties and associated applications often not possible from graphene…

材料科学 · 物理学 2016-05-05 Lu Hua Li , Ying Chen

Hexagonal boron nitride is rapidly gaining interest as a platform for photonic quantum technologies, due to its two-dimensional nature and its ability to host defects deep within its large band gap that may act as room-temperature…

A global trend to miniaturization and multiwavelength performance of nanophotonic devices drives research on novel phenomena, such as bound states in the continuum and Mietronics, as well as the survey for high-refractive index and strongly…

In twisted layered materials (t-LMs), an inter-layer rotation can break inversion symmetry and create an interfacial array of staggered out-of-plane polarization due to AB/BA stacking registries. This symmetry breaking can also trigger the…