相关论文: Fractional quantum conductance staircase of edge h…

We present the experimental data of the electric features of the silicon nanosandwichstructures obtained by silicon planar technology in the frameworks of the Hall geometry that represent the ultra-shallow silicon quantum well of 2 nm wide…

The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron…

Electroluminescence spectra of a silicon nanostructure with edge channels covered by chains of dipole centers with negative correlation energy are demonstrated. The presence of such chains provides conditions for nondissipative transport of…

We present the findings of the 0.7(2e2/h) feature in the hole quantum conductance staircase that is caused by silicon one-dimensional channels prepared by the split-gate method inside the p-type silicon quantum well (SQW) on the n-type Si…

The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport. The aforesaid promotes also the creation of composite…

Quantum Hall edge states in proximity to a superconductor (SC) usually acquire a non-quantized electron-to-hole conversion probability in transport, due to non-universal SC couplings and disorders. With counter-propagating modes, we show…

We present the findings of the studies of the silicon sandwich nanostructure that represents the high mobility ultra - narrow silicon quantum well of the p - type (Si - QW), 2 nm, confined by the delta - barriers, 3 nm, heavily doped with…

Using a scattering technique based on a parametrized linear combination of atomic orbitals Hamiltonian, we calculate the ballistic quantum conductance of multi-wall carbon nanotubes. We find that inter-wall interactions not only block some…

We present the findings of the superconductivity in the silicon nanostructures prepared by short time diffusion of boron of the n - type Si (100) surface. These Si - based nanostructures represent the p - type ultra-narrow self - assembled…

Confinement of small-gapped fractional quantum Hall states facilitates quasiparticle manipulation and is an important step towards quasiparticle interference measurements. Demonstrated here is conduction through top gate defined, narrow…

Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/SiGe heterostructures with a thin, pure Ge layer at the top…

Effects of backward scattering between fractional quantum Hall (FQH) edge modes are studied. Based on the edge-state picture for hierarchical FQH liquids, we discuss the possibility of the transitions between different plateaux of the…

We present the findings of the superconductivity observed in the silicon nanostructures prepared by short time diffusion of boron on the n-type Si(100) surface. These Si-based nanostructures represent the p-type ultra-narrow self-assembled…

Using local scanning electrical techniques we study edge effects in side-gated Hall nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow…

Since the ground-breaking discovery of the quantum Hall effect, half-quantized quantum Hall plateaus have been some of the most studied and sought-after states. Their importance stems not only from the fact that they transcend the composite…

Remarkable nonlinearities in the differential tunneling conductance between fractional quantum Hall edge states at a constriction are observed in the weak-backscattering regime. In the $\nu $ = 1/3 state a peak develops as temperature is…

We study the effect of backward scatterings in the tunneling at a point contact between the edges of a second level hierarchical fractional quantum Hall states. A universal scaling dimension of the tunneling conductance is obtained only…

We performed thermoelectric Hall conductivity $\alpha_{xy}$ measurements on single-crystal graphite in the quantum limit up to 13 T. Both electrical and thermoelectric transport measurements were performed on the same crystal to extract…

We have studied ballistic transport in a 1D channel formed using surface gate techniques on a back-gated, high-mobility, bilayer 2D hole system. At millikelvin temperatures, robust conductance quantization is observed in the quantum wire…

We present the findings of the superconductivity in the silicon nanostructures prepared by short time diffusion of boron after preliminary oxidation of the n-type Si (100) surface. These Si-based nanostructures represent the p-type high…