相关论文: Anisotropic Vapor HF etching of silicon dioxide fo…
Anisotropic etching is a widely used process in semiconductor manufacturing, in particular for micro- and nano-scale texturing of silicon surfaces for black silicon production. The typical process of plasma-assisted etching uses energetic…
Systematic studies of the gradual fabrication by means of carbon ion-implantation of high-quality 6H-SiC layers on silicon surfaces have been carried out. The fluence of carbon ions varied from 5*10^15 cm-2 to 10^17 cm-2. Results of…
Inductively Coupled Plasma (ICP) etching of amorphous silicon (a-Si) nanostructures using a continuous C4F8/SF6 plasma over nanotopography in silicon dioxide (SiO2) is investigated. The coil power of the ICP system is used to tune the a-Si…
Electrochemical etching of silicon in hydrofluoride containing electrolytes leads to pore formation for low and to electropolishing for high applied current. The transition between pore formation and polishing is accompanied by a change of…
Wet etching is an essential and complex step in semiconductor device processing. Metal-Assisted Chemical Etching (MacEtch) is fundamentally a wet but anisotropic etching method. In the MacEtch technique, there are still a number of…
Hydrogenated amorphous silicon is well known for its various alloys and wide ranging opto-electronic properties. Hydrogenated silicon sub-oxide (aSiO:H) is one of them. The effect of boron doping on optoelectronic properties of the aSiO:H…
When Si is anodically oxidized in a fluoride containing electrolyte, an oxide layer is grown. Simultaneously, the layer is etched by the fluoride containing electrolyte. The resulting stationary state exhibits a negative slope of the…
This paper presents a new research study on the platform fabrication of fluorescence bio-detection chip with an optical fiber transmission. Anisotropic wet etching on (100) silicon wafers to fabrication V-groove for optical fiber alignment…
Metal-assisted chemical etching of silicon is a promising method for fabricating nanostructures with a high aspect ratio. To define a pattern for the catalyst, lift-off processes are commonly used. The lift-off step however is often a…
The release process for the fabrication of freestanding oxide microstructures relies on appropriate, controllable and repeatable wet etching procedures. SrTiO3 is among the most employed substrates for oxide thin films growth and can be…
The annealing kinetics of the high energy ion damage in amorphous silicon dioxide (a-SiO2) are still not well understood, despite the material's widespread application in material science, physics, geology, and biology. This study…
Reliable and precise etching of silicon nanostructures with ultra-high aspect ratios is required in many fields. Metal assisted chemical etching (MacEtch) in vapor is a plasma-free etching method that attracts considerable attention owing…
Precise control of ion energy distribution functions (IEDF) is crucial for selectivity as well as control over sputter rate and substrate damage in nanoscale plasma processes. In this work, a low frequency (100 kHz) tailored…
Microwave loss in superconducting titanium nitride (TiN) films is attributed to two-level systems in various interfaces arising in part from oxidation and microfabrication-induced damage. Atomic layer etching (ALE) is an emerging…
Silicon carbide (SiC) represents a promising but largely untested plasma-facing material (PFM) for next-step fusion devices. In this work, an analytic mixed-material erosion model is developed by calculating the physical (via SDTrimSP) and…
The synthesis of embedded silicon carbide was carried out in N type silicon samples having (100) and (111) orientations using high dose implantation of carbon ions at room temperature. The variation of dose was employed to get dose…
Classical molecular-dynamics simulations have been carried out to investigate densification mechanisms in silicon dioxide thin films deposited on an amorphous silica surface, according to a simplified ion-beam assisted deposition (IBAD)…
The irradiation represents a useful tool for determining the characteristics of defects in semiconductors as well as a method to evaluate their degradation, fact with important technological consequences. In this contribution, starting from…
Controlling the contamination of silicon materials by iron, especially dissolved interstitial iron (Fe$_{\mathrm{i}}$), is a longstanding problem with recent developments and several open issues. Among these we have the question whether…
The silicon/silicon dioxide (Si/SiO2) interface plays a crucial role in the performance, cost, and reliability of most modern microelectronic devices, from the basic transistor to flash memory, digital cameras, and solar cells. Today the…