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相关论文: Photo-induced states in a Mott insulator

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Photo-doping of Mott insulators or correlated metals can create an unusual metallic state which simultaneously hosts hole-like and electron-like particles. We study the dynamics of this state up to long times, as it passes its kinetic…

强关联电子 · 物理学 2021-05-26 Nagamalleswararao Dasari , Jiajun Li , Philipp Werner , Martin Eckstein

Photo-induced metallic states in a Mott insulator are studied for the half-filled, one-dimensional Hubbard model with the time-dependent density matrix renormalization group. An irradiation of strong AC field is found to create a linear…

强关联电子 · 物理学 2009-11-13 Takashi Oka , Hideo Aoki

A description of long-lived photo-doped states in Mott insulators is challenging, as it needs to address exponentially separated timescales. We demonstrate how properties of such states can be computed using numerically exact steady state…

We study photoinduced optical responses of one-dimensional strongly correlated electron systems. The optical conductivity spectra are calculated for the ground state and a photoexcited state in the one-dimensional Hubbard model at half…

强关联电子 · 物理学 2009-11-11 Nobuya Maeshima , Kenji Yonemitsu

The study of nonequilibrium phenomena in interacting lattice systems can provide new perspectives on correlation effects, and information on metastable states of matter. Mott insulators are a promising class of systems for nonequilibrium…

强关联电子 · 物理学 2025-08-05 Yuta Murakami , Denis Golež , Martin Eckstein , Philipp Werner

Trial wavefunctions, constructed explicitly from the unique 2-dimensional Mott insulating state with antiferromagnetic order, are proposed to describe the low-energy states of a Mott insulator slightly doped with holes or electrons. With…

强关联电子 · 物理学 2009-11-07 T. K. Lee , Chang-Ming Ho , Naoto Nagaosa , Wei-Cheng Lee

Photo-doped Mott insulators can exhibit novel photocarrier transport and relaxation dynamics and non-equilibrium phases. However, time-resolved real-space imaging of these processes are still lacking. Here, we use scanning ultrafast…

We theoretically study pump-photon-energy-dependent pathways of a photoinduced dimer-Mott-insulator-to-metal transition, on the basis of numerical solutions to the time-dependent Schr\"odinger equation for the exact many-body wave function…

强关联电子 · 物理学 2015-05-28 Kenji Yonemitsu , Satoshi Miyashita , Nobuya Maeshima

We study the electronic state of the doped Mott-Hubbard insulator within Dynamical Mean Field Theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both…

强关联电子 · 物理学 2009-11-11 A. Camjayi , R. Chitra , M. J. Rozenberg

We study the influence of the pulse energy and fluence on the thermalization of photo-doped Mott insulators. If the Mott gap is smaller than the width of the Hubbard bands, the kinetic energy of individual carriers can be large enough to…

强关联电子 · 物理学 2014-12-09 Philipp Werner , Karsten Held , Martin Eckstein

Photo-excited strongly correlated systems can exhibit intriguing non-thermal phases, but the theoretical investigation of them poses significant challenges. In this work, we introduce a generalized Gibbs ensemble type description for…

Understanding light-induced hidden orders is relevant for nonequilibrium materials control and future ultrafast technologies. Hidden superconducting order, in particular, has been a focus of recent experimental and theoretical efforts. In…

强关联电子 · 物理学 2025-09-04 Sujay Ray , Martin Eckstein , Philipp Werner

We show that doped Mott insulators exhibit a collective degree of freedom, not made out of the elemental excitations, because the number of single-particle addition states at low energy per electron per spin is greater than one. The…

强关联电子 · 物理学 2008-05-30 Philip Phillips , Ting-Pong Choy , Robert G. Leigh

The undoped antiferromagnetic Mott insulator naturally has one charge carrier per lattice site. When it is doped with additional carriers, they are unstable to spin fluctuation-mediated Cooper pairing as well as other unconventional types…

We use a nonequilibrium implementation of extended dynamical mean field theory to study the effect of dynamical screening in photo-excited Mott insulators. The insertion of doublons and holes adds low-energy screening modes and leads to a…

强关联电子 · 物理学 2015-11-17 Denis Golez , Martin Eckstein , Philipp Werner

We use scanning tunneling microscopy to visualize the atomic-scale electronic states induced by a pair of hole dopants in Ca2CuO2Cl2 parent Mott insulator of cuprates. We find that when the two dopants approach each other, the transfer of…

超导电性 · 物理学 2021-06-14 Haiwei Li , Shusen Ye , Jianfa Zhao , Changqing Jin , Yayu Wang

Reservoir engineering is a powerful approach for using controlled driven-dissipative dynamics to prepare target quantum states and phases. In this work, we study a paradigmatic model that can realize a Mott insulator of photons in its…

量子物理 · 物理学 2025-03-05 Orazio Scarlatella , Aashish A. Clerk , Marco Schirò

In a solid material strong interactions between the electrons can lead to surprising properties. A prime example is the Mott insulator, where the suppression of conductivity is a result of interactions and not the consequence of a filled…

其他凝聚态物理 · 物理学 2010-01-21 Robert Jördens , Niels Strohmaier , Kenneth Günter , Henning Moritz , Tilman Esslinger

Mott insulators form because of strong electron repulsions, being at the heart of strongly correlated electron physics. Conventionally these are understood as classical "traffic jams" of electrons described by a short-ranged entangled…

高能物理 - 理论 · 物理学 2018-08-03 Tomas Andrade , Alexander Krikun , Koenraad Schalm , Jan Zaanen

In strongly correlated electron systems, the emergence of states in the Mott gap in the single-particle spectrum following the doping of the Mott insulator is a remarkable feature that cannot be explained in a conventional rigid-band…

强关联电子 · 物理学 2015-08-20 Masanori Kohno
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