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相关论文: Field effect on surface states in a doped Mott-Ins…

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The ground state properties of a paramagnetic Mott insulator are investigated in the presence of an external electrical field using the inhomogeneous Gutzwiller approximation for a single band Hubbard model in a slab geometry. The metal…

强关联电子 · 物理学 2015-05-30 D. Nasr Esfahani , L. Covaci , F. M. Peeters

The physics of doping a Mott insulator is investigated in the presence of a solid-vacuum interface. Using the embedding approach for dynamical mean field theory we show that the change in surface spectral evolution in a doped Mott insulator…

强关联电子 · 物理学 2011-07-12 Reza Nourafkan , Frank Marsiglio

Simulations are carried out based on the dynamical mean-field theory (DMFT) in order to investigate the properties of correlated thin films for various values of the chemical potential, temperature, interaction strength, and applied…

We investigate the electrostatic effects in doped topological insulators by developing a self consistent scheme for an interacting tight binding model. The presence of bulk carriers, in addition to surface electrons, generates an intrinsic…

材料科学 · 物理学 2013-05-30 Dimitrios Galanakis , Tudor D. Stanescu

We investigate the consequences of applying electric fields perpendicularly to thin films of topological semimetals. In particular, we consider Weyl and Dirac semimetals in a configuration such that their surface Fermi arcs lie on opposite…

介观与纳米尺度物理 · 物理学 2019-10-18 Yuriko Baba , Álvaro Díaz-Fernández , Elena Díaz , Francisco Domínguez-Adame , Rafael A. Molina

In the framework of cluster perturbation theory for the 2D Hubbard and Hubbard-Holstein models at low hole doping we have studied the effect of local and short-range correlations in strongly correlated systems on the anomalous features in…

强关联电子 · 物理学 2019-02-05 V. I. Kuz'min , S. V. Nikolaev , S. G. Ovchinnikov

We study the electronic structure of the doped paramagnetic insulator by finite temperature Quantum Monte-Carlo simulations for the 2D Hubbard model. Throughout we use the moderately high temperature T=0.33t, where the spin correlation…

强关联电子 · 物理学 2007-05-23 C. Groeber , M. G. Zacher , R. Eder

We have used the electric--field effect to modulate the resistivity of the surface of underdoped Sr$_{0.88}$La$_{0.12}$CuO$_{2+x}$ thin films, allowing opposite modifications of the electron and hole density in the CuO$_2$ planes, an…

超导电性 · 物理学 2011-09-20 L. Fruchter , F. Bouquet , Z. Z. Li

The effect of proximity to a Mott insulating phase on the charge transport properties of a superconductor is determined. An action describing the low energy physics is formulated and different scenarios for the approach to the Mott phase…

强关联电子 · 物理学 2009-11-07 L. B. Ioffe , A. J. Millis

We use the embedding approach for a dynamical mean-field method to investigate the electronic properties of a semi-infinite two band Hubbard model at half- and quarter-filling. Two effects determine the degree of correlation at the surface:…

强关联电子 · 物理学 2011-09-06 Reza Nourafkan , Frank Marsiglio

Arguably the most intriguing aspect of the physics of cuprates is the close proximity between the record high-Tc superconductivity (HTSC) and the antiferromagnetic charge-transfer insulating state driven by Mott-like electron correlations.…

We present spectral and optical properties of the Hubbard model on a two-dimensional square lattice using a generalization of dynamical mean-field theory to magnetic states in finite dimension. The self-energy includes the effect of spin…

强关联电子 · 物理学 2009-10-31 Marcus Fleck , Alexander I. Lichtenstein , Andrzej M. Oles , L. Hedin

Effects of electron correlation on the Fermi surface is investigated for the two-dimensional Hubbard model by the quantum Monte Carlo method. At first, an infinitesimal doping from the half filling is focused on and the momentum dependent…

强关联电子 · 物理学 2009-11-07 Y. Otsuka , Y. Morita , Y. Hatsugai

Electron quasiparticles are progressively weakened by correlations upon approaching a continuos Mott metal insulator transition in a bulk solid. We show that corresponding to the bulk weakening, a dead layer forms below the surface of the…

强关联电子 · 物理学 2009-11-13 Giovanni Borghi , Michele Fabrizio , Erio Tosatti

We present determinant quantum Monte Carlo simulations of the hole-doped single-band Hubbard-Holstein model on a square lattice, to investigate how quasiparticles emerge when doping a Mott insulator (MI) or a Peierls insulator (PI). The MI…

We study the electronic state of the doped Mott-Hubbard insulator within Dynamical Mean Field Theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both…

强关联电子 · 物理学 2009-11-11 A. Camjayi , R. Chitra , M. J. Rozenberg

We investigate the strong correlation effect in the spinless electron-hole two-band Hubbard model using the dynamical mean-field theory. At half filling, both the renormalization factor $Z$ and the number of conduction electrons (valence…

强关联电子 · 物理学 2026-05-26 Masashi Akiyama , Yusuke Inokuma , Yoshiaki Ono

Unravelling the nature of doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. For this purpose, we study the evolution of…

强关联电子 · 物理学 2018-03-14 Yao Wang , Brian Moritz , Cheng-Chien Chen , Thomas P. Devereaux , Krzysztof Wohlfeld

The electronic quasiparticle structure of a ferromagnetic local moment film is investigated within the framework of the s-f model. For the special case of a single electron in an otherwise empty energy band being exchange coupled to a fully…

强关联电子 · 物理学 2009-10-31 R. Schiller , W. Mueller , W. Nolting

The intrinsic weak and highly non-local dielectric screening of two-dimensional materials is well known to lead to high sensitivity of their optoelectronic properties to environment. Less studied theoretically is the role of free carriers…

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