相关论文: Residual disorder and diffusion in thin Heusler al…
This manuscript presents a working model linking chemical disorder and transport properties in correlated-electron perovskites with high-entropy formulations and a framework to actively design them. We demonstrate this new learning in…
Si-doped GaN films were grown on $\textit{c}$-sapphire by rf magnetron reactive co-sputtering of GaAs and Si at various partial pressures of N$_2$ in Ar-N2 growth atmosphere and their epitaxial character was ascertained by phi-scans. Energy…
The stability of interfaces and the mechanisms of thin film growth on semiconductors are issues of central importance in electronic devices. These issues can only be understood through detailed study of the relevant microscopic processes.…
The transition of atomic, electronic, or e-h systems to quantum phases is an extraordinary process when both microscopic and macroscopic properties of the system undergo fundamental changes. Bose-Einstein condensation, has been observed in…
We report the physical properties of Co$_2$CrAl Heusler alloy epitaxial thin films grown on single crystalline MgO(001) substrate using pulsed laser deposition technique. The x-ray diffraction pattern in $\theta$-2$\theta$ mode showed the…
We present experimental XMLD spectra measured on epitaxial (001)-oriented thin Co$_{2}$FeSi films, which are rich in features and depend sensitively on the degree of atomic order and interdiffusion from capping layers. Al- and Cr-capped…
Thin films of Co2MnSi have been grown on a-plane sapphire substrates from three elemental targets by dc magnetron co-sputtering. These films are single phase, have a strong (110) texture and a saturation magnetization of 4.95 uB/formula…
ZrO2:10%SiO2 thinfilms have been deposited on fused silica substrate by reactive electron beam co-evaporation technique at different oxygen partial pressure. The structural analysis shows tetragonal phase with residual tensile stress in the…
Si1-xGex/Si1-yGey/Si(100) heterostructures grown by Molecular Beam Epitaxy (MBE) were used in order to study B surface segregation during growth and B lattice diffusion. Ge concentration and stress effects were separated. Analysis of B…
We consider a microscopic model of a polymer blend that is prone to phase separation. Permanent crosslinks are introduced between randomly chosen pairs of monomers, drawn from the Deam-Edwards distribution. Thereby, not only density but…
We present time-resolved high energy x-ray diffraction (tr-HEXRD), time-resolved hard x-ray photoelectron spectroscopy (tr-HAXPES) and time-resolved grazing incidence small angle x-ray scattering (tr-GISAXS) data of the reactive molecular…
Properties of complex oxide thin films can be tuned over a range of values as a function of mismatch, composition, orientation, and structure. Here, we report a strategy for growing structured epitaxial thermoelectric thin films leading to…
CaFe2O4 is a highly anisotropic antiferromagnet reported to display two spin arrangements with up-up-down-down (phase A) and up-down-up-down (phase B) configurations. The relative stability of these phases is ruled by the competing…
Scanning tunneling microscopy (STM) and spectroscopy (STS) in combination with density functional theory (DFT) calculations are employed to study the surface and subsurface properties of the metastable phase of the phase change material…
The authors demonstrated that L21-ordered full-Heusler Co2FeSi (CFS) alloy film with thickness of 100 nm were formed by facing targets sputtering (FTS) method at a substrate temperature TS = 300 deg C. Degrees of L21- and B2- order for the…
In the present work, cesium iodide (CsI) thin films of different thickness have been prepared by thermal evaporation technique. The crystallite size and grain size of these films are compared by using X-ray diffraction (XRD) profile…
Thin film oxides are a source of endless fascination for the materials scientist. These materials are highly flexible, can be integrated into almost limitless combinations, and exhibit many useful functionalities for device applications.…
We have reproducibly grown near-single-domain superconducting aluminum (Al) films on GaAs(111)A wafers using molecular beam epitaxy. Synchrotron X-ray diffraction revealed twin-domain ratios of 0.00005 and 0.0003 for 19.4-nm- and…
Thin films of uniformly distributed Fe2O3 nanoparticles have been prepared on single crystal silicon and glass substrates by a spray pyrolysis technique in a single step using a mixture of water and ferrocene dissolved in xylene. The size…
High-entropy oxides (HEOs) are a promising class of multicomponent ceramics with tunable structural and electronic properties. In this study, we investigate the local electronic structure of rare-earth HEOs in the (Ce, Sm, Pr, La, Y)O2…