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We have investigated transport properties of CrO2 thin films deposited on TiO2 and sapphire substrates. The films are good metals down to low temperatures. The residual resistivity is of the order of 6 micro-ohhmcm for films deposited on…

强关联电子 · 物理学 2015-06-15 M. S. Anwar , J. Aarts

A sharp distinction between magnetoresistance (MR) behavior for the magnetic fields applied perpendicular (H_{perp}) and parallel (H_{par}) to the film plane is found in colossal-magnetoresistance film La_{1-x}Ca_{x}MnO_{3} (x \approx 3).…

材料科学 · 物理学 2009-10-31 B. I. Belevtsev , V. B. Krasovitsky , D. G. Naugle , K. D. D. Rathnayaka , A. Parasiris

The magnetoresistance (MR) of 10 nm to 200 nm thin polycrystalline Co-films, deposited on glass and insulating Si(100), is studied in fields up to 120 kOe, aligned along the three principal directions with respect to the current:…

其他凝聚态物理 · 物理学 2009-11-11 Woosik Gil , Detlef Goerlitz , Michael Horisberger , Juergen Koetzler

Ferromagnetic Co$_2$MnGa has recently attracted significant attention due to effects related to non-trivial topology of its band structure, however a systematic study of canonical magneto-galvanic transport effects is missing. Focusing on…

Permalloy (Py:Ni81Fe19) exhibits an anisotropic magnetoresistance (AMR) which is very often used to read magnetic signals from storage devices. Py-films of thickness 20nm were prepared by dc-magnetron sputtering in a magnetic field onto…

材料科学 · 物理学 2007-05-23 T. Lorenz , A. Kaeufler , Y. Luo , M. Moske , K. Samwer

Half-metals are a class of quantum materials with 100% spin-polarization at the Fermi level and have attracted a lot of attention for future spintronic device applications. CrO2 is one of the most promising half-metal candidates, for which…

In this work, we study the anisotropic magnetoresistance (AMR) behavior of [001] epitaxial Fe65Co35 thin films along different crystallographic directions as a function of temperature. The AMR ratio is found to strongly depend on the…

A set of thin film Mn$_x$Si$_{1-x}$ alloy samples with different manganese concentration x = 0.44 - 0.63 grown by the pulsed laser deposition (PLD) method onto the Al$_2$O$_3$(0001) substrate was investigated in the temperature range 4 -…

We have investigated magnetization(M), magnetocaloric effect(MCE) and magnetothermopower(MTEP) in polycrystalline Pr0.6Sr0.4MnO3, which shows a second-order paramagnetic to ferromagnetic transition near room temperature (TC = 305 K).…

强关联电子 · 物理学 2012-10-19 D. V. Maheshwar Repaka , T. S. Tripathi , M. Aparnadevi , R. Mahendiran

Reflection high energy electron diffraction (RHEED), scanning tunneling microscopy (STM), vibrating sample magnetometry and other physical property measurements are used to investigate the structure, morphology, magnetic and…

We report the evolution of magnetic moment as well as magnetic anisotropy with crystalline order in Co$_2$MnSi thin films grown on $(100)$ MgO by pulsed laser deposition. The films become more ordered as the annealing temperature ($T_A$)…

材料科学 · 物理学 2013-05-31 Himanshu Pandey , P. C. Joshi , R. P. Pant , R. Prasad , S. Auluck , R. C. Budhani

Amorphous thin films of Tb$_{17}$Co$_{83}$ (a-Tb-Co) grown by magnetron co-sputtering exhibit changes in magnetic anisotropy with varying growth and annealing temperatures. The magnetic anisotropy constant increases with increasing growth…

The structure, morphology, and electrical properties of epitaxial a-axis oriented thin films of Nd(0.2)Sr(0.8)MnO(3) are reported for thicknesses 10 nm <= t <= 150 nm. Films were grown with both tensile and compressive strain on various…

强关联电子 · 物理学 2015-05-14 K. P. Neupane , J. J. Neumeier , J. L. Cohn

The temperature and thickness dependencies of the in-plane anisotropic magnetoresistance (AMR) of SmB$_6$ thin films are reported. We find that the AMR changes sign from negative ($\rho_{||}<\rho_{\perp}$) at high temperatures to positive…

强关联电子 · 物理学 2017-03-30 M. Shaviv Petrushevsky , P. K. Rout , G. Levi , A. Kohn , Y. Dagan

Co80Ir20 ferromagnetic thin films have recently been the focus of intensive research because the negative magnetocrystalline anisotropy adds to the shape anisotropy and favors a strong alignment of the magnetization in the film plane for…

By performing systematic $ab$ $initio$ density functional calculations, here we study two relativity-induced properties of atomically thin ferromagnetic (FM) Cr$_2$Ge$_2$Te$_6$ films [monolayer (ML), bilayer (BL) and trilayer (TL) as well…

介观与纳米尺度物理 · 物理学 2018-09-25 Yimei Fang , Shunqing Wu , Zi-Zhong Zhu , Guang-Yu Guo

Impact of rapid thermal processing (RTP) on microstructure and magnetic properties of Gd-Fe thin films have been investigated with a special emphasis to magnetic microstructure. 100 nm thick amorphous Gd-Fe film shows elongated stripe…

介观与纳米尺度物理 · 物理学 2018-03-28 A. Talapatraa , J. Arout Chelvane , B. Satpati , S. Kumar , J. Mohanty

The correlation between magnetic and structural properties of Co_{2} FeAl (CFA) thin films of different thickness (10 nm<d< 100 nm) grown at room temperature on MgO-buffered Si/SiO2 substrates and annealed at 600\lyxmathsym{\textdegree}C…

材料科学 · 物理学 2014-07-30 M. Belmeguenai , H. Tuzcuoglu , M. S. Gabor , T. Petrisor , C. Tuisan , D. Berling , F. Zighem , S. M. Chérif

The electrical resistivity, anisotropic magnetoresistance (AMR), and anomalous Hall effect of ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films has been investigated. The data show a behavior characteristic for a ferromagnetic…

介观与纳米尺度物理 · 物理学 2014-09-26 Christoph Sürgers , Gerda Fischer , Patrick Winkel , Hilbert v. Löhneysen

Epitaxial growth of Co20Fe50Ge30 thin film on single crystal MgO (001) substrate is reported. Structure characterization revealed (001)-oriented B2 order of CoFeGe well lattice matched with the MgO barrier. Perpendicular magnetic anisotropy…

材料科学 · 物理学 2015-06-16 Manli Ding , S. Joseph Poon
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