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We report an approach to synthesize high quality graphene by surface segregation and substrate transfer. Graphene was segregated from Ni surface under the ambient pressure by dissolving carbon in Ni at high temperatures followed by cooling…

材料科学 · 物理学 2008-12-09 Qingkai Yu , Jie Lian , Sujitra Siriponglert , Hao Li , Yong Chen , Shin-Shem Pei

We report the chemical reaction of single-layer graphene with hydrogen atoms, generated in situ by electron-induced dissociation of hydrogen silsesquioxane (HSQ). Hydrogenation, forming sp3 C-H functionality on the basal plane of graphene,…

We show that it is possible to deposit, by mechanical exfoliation on SiO2/Si wafers, atomically thin mica flakes down to a single monolayer thickness. The optical contrast of these mica flakes on top of a SiO2/Si substrate, which depends on…

The deformation of monolayer graphene, produced by chemical vapor deposition (CVD), on a polyester film substrate has been investigated through the use of Raman spectroscopy. It has been found that the microstructure of the CVD graphene…

The room-temperature Raman signatures from graphene layers on sapphire and glass substrates were compared with those from graphene on GaAs substrate and on the standard Si/SiO2 substrate, which served as a reference. It was found that while…

材料科学 · 物理学 2007-12-03 I. Calizo , W. Bao , F. Miao , C. N. Lau , A. A. Balandin

We report the frictional response of few-layer graphene (FLG) flakes obtained by liquid phase exfoliation (LPE) of pristine graphite. To this end, we inkjet print FLG on bare and hexamethyldisilazane-terminated SiO2 substrates, producing…

Density functional theory has been employed to study graphene on the (111), (100) and (110) surfaces of silicon (Si) substrates. There are several interesting findings. First, carbon atoms in graphene form covalent bonds with Si atoms, when…

材料科学 · 物理学 2021-07-14 Y. W. Sun , D. Holec , D. Gehringer , L. Li , O. Fenwick , D. J. Dunstan , C. J. Humphreys

Using nanoparticles to impart extrinsic rippling in graphene is a relatively new method to induce strain and to tailor the properties of graphene. Here we study the structure and elastic properties of graphene grown by chemical vapour…

介观与纳米尺度物理 · 物理学 2016-09-14 Zoltán Osváth , Eszter Gergely-Fülöp , András Deák , Chanyong Hwang , László P. Biró

Graphene layers placed on SrTiO3 single-crystal substrates were investigated using temperature-dependent confocal Raman spectroscopy. This approach successfully resolved distinct Raman modes of graphene that are often untraceable in…

材料科学 · 物理学 2022-09-22 S. Shrestha , C. S. Chang , S. Lee , N. L. Kothalawala , D. Y. Kim , M. Minola , J. Kim , A. Seo

We demonstrate molecular beam growth of graphene on biotite mica substrates at temperatures below 1000{\deg}C. As indicated by optical and atomic force microscopy, evaporation of carbon from a high purity solid-state source onto biotite…

Exfoliated graphene monolayers are identified by optical inspection. In order to improve the monolayer detection, we investigate the angle dependence of the optical contrast of graphene on a 90nm SiO$_2$/Si substrate. We observe a…

介观与纳米尺度物理 · 物理学 2009-10-14 Victor Yu , Michael Hilke

Nano-rippled graphene, a structurally modified graphene, presents a novel material with a large range of possible applications including sensors, electrodes, coatings, optoelectronics, spintronics and straintronics. In this work we have…

介观与纳米尺度物理 · 物理学 2015-11-20 Iva Šrut Rakić , Davor Čapeta , Milivoj Plodinec , Marko Kralj

Graphene, a single atomic layer of graphitic carbon, has attracted intense attention due to its extraordinary properties that make it a suitable material for a wide range of technological applications. Large-area graphene films, which are…

介观与纳米尺度物理 · 物理学 2015-02-18 Oleg V. Yazyev , Yong P. Chen

Graphene, a monolayer of carbon atoms packed into a two-dimensional crystal structure, attracted intense attention owing to its unique structure and optical, electronic properties. Recent advances in chemical vapor deposition (CVD) have led…

材料科学 · 物理学 2020-10-23 Yu-Hao Deng

Graphene is formed on SiC(000-1) surfaces (the so-called C-face of the crystal) by annealing in vacuum, with the resulting films characterized by atomic force microscopy, Auger electron spectroscopy, scanning Auger microscopy and Raman…

材料科学 · 物理学 2015-05-13 Luxmi , P. J. Fisher , N. Srivastava , R. M. Feenstra , Yugang Sun , J. Kedzierski , P. Healey , Gong Gu

A great efficacy of molecular quantum chemistry applied to basic graphene problems has been recently demonstrated by the authors when studying the formation of peculiar composites between carbon nanotubes and graphene as well as considering…

介观与纳米尺度物理 · 物理学 2011-02-07 Elena F Sheka , Nadezhda A Popova

With expanding interest in graphene-based electronics, it is crucial that high quality graphene films be grown. Sublimation of Si from the 4H-SiC(0001) Si-terminated) surface in ultrahigh vacuum is a demonstrated method to produce epitaxial…

材料科学 · 物理学 2009-11-11 J. Hass , C. A. Jeffrey , R. Feng , T. Li , X. Li , Z. Song , C. Berger , W. A. de Heer , P. N. First , E. H. Conrad

Identification of the mechanically exfoliated graphene flakes and classification of the thickness is important in the nanomanufacturing of next-generation materials and devices that overcome the bottleneck of Moore's Law. Currently,…

计算机视觉与模式识别 · 计算机科学 2022-03-30 Soroush Mahjoubi , Fan Ye , Yi Bao , Weina Meng , Xian Zhang

As the synthesis of graphene on copper became one of the primary preparation methods for both fundamental research and industrial application, Raman spectra of graphene/Cu systems need to be quantitatively understood regarding how their…

材料科学 · 物理学 2020-08-07 Jieun Choi , Seonghyun Koo , Myeongin Song , Daeyool Jung , Sungyool Choi , Sunmin Ryu

Graphene, a one-atom thick zero gap semiconductor [1, 2], has been attracting an increasing interest due to its remarkable physical properties ranging from an electron spectrum resembling relativistic dynamics [3-12] to ballistic transport…

介观与纳米尺度物理 · 物理学 2011-11-09 T. O. Wehling , K. S. Novoselov , S. V. Morozov , E. E. Vdovin , M. I. Katsnelson , A. K. Geim , A. I. Lichtenstein