相关论文: Gate defined zero- and one-dimensional confinement…
Equilibration of quantum Hall edges is studied in a high quality dual gated bilayer graphene device in both unipolar and bipolar regime when all the degeneracies of the zero energy Landau level are completely lifted. We find that in the…
We present a detailed study of the electronic and spin-orbit properties of single and bilayer graphene in proximity to the topological insulator Bi$_2$Se$_3$. Our approach is based on first-principles calculations, combined with symmetry…
We present a thermal annealing study on single-layer and bilayer (BLG) graphene encapsulated in hexagonal boron nitride. The samples are characterized by electron transport and Raman spectroscopy measurements before and after each annealing…
Quantum computers require both scalability and high performance for practical applications. While semiconductor quantum dots are promising candidates for quantum bits, the complexity of measurement setups poses an important challenge for…
We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system -- \emph{biased bilayer}. The effect of the perpendicular…
We report on a capacitance study of dual gated bilayer graphene. The measured capacitance allows us to probe the electronic compressibility as a function of carrier density, temperature, and applied perpendicular electrical displacement D.…
Graphene-based systems have emerged as a rich platform for exploring emergent quantum phenomena-including superconductivity, magnetism, and correlated insulating behavior-arising from flat electronic bands that enhance many-body…
Generating photogalvanic effects in centrosymmetric materials can provide new opportunities for developing passive photodetectors and energy harvesting devices. In this work, we investigate the photogalvanic effects in centrosymmetric…
Graphene quantum dots provide promising platforms for hosting spin, valley, or spin-valley qubits. Taking advantage of the electrically generated band gap and the ambipolar nature, high-quality quantum dots can be defined in bilayer…
The electronic and optical response of Bernal stacked bilayer graphene with geometry modulation and gate voltage are studied. The broken symmetry in sublattices, one dimensional periodicity perpendicular to the domain wall and out-of-plane…
We report on charge detection in electrostatically-defined quantum dot devices in bilayer graphene using an integrated charge detector. The device is fabricated without any etching and features a graphite back gate, leading to high quality…
Magic-angle twisted bilayer graphene (MATBG) combines in one single material different phases like insulating, metallic and superconducting. These phases and their in-situ tunability make MATBG an important platform for the fabrication of…
We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of doping, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes…
A theory is developed for calculating vertical tunneling current between two sheets of bilayer graphene separated by a thin, insulating layer of hexagonal boron nitride, neglecting many-body effects. Results are presented using physical…
The effective interaction between electrons in two-dimensional materials can be modified by their environment, enabling control of electronic correlations and phases. Here, we study the dependence of electronic correlations in twisted…
We demonstrate the fabrication of graphene nanogap with crystallographically matching edges on SiO2Si substrates by divulsion. The current-voltage measurement is then performed in a high-vacuum chamber for a graphene nanogap with few…
The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride…
We study the electronic properties of commensurate faulted bilayer graphene by diagonalizing the one-particle Hamiltonian of the bilayer system in a complete basis of Bloch states of the individual graphene layers. Our novel approach is…
Electrostatic gating provides a way to obtain key functionalities in modern electronic devices and to qualitatively alter materials properties. While electrostatic description of such gating gives guidance for related doping effects,…
Graphene nanoribbons and constrictions are envisaged as fundamental components of future carbon-based nanoelectronic and spintronic devices. At nanoscale, electronic effects in these devices depend heavily on the dimensions of the active…