相关论文: Gate defined zero- and one-dimensional confinement…
The recent emergence of strain gradient engineering directly affects the nanomechanics, optoelectronics and thermal transport fields in 2D materials. More specifically, large suspended graphene under very high stress represents the…
More than a decade after the discovery of graphene, ballistic transport in nanostructures based on this intriguing material still represents a challenging field of research in two-dimensional electronics. The presence of rough edges in…
Due to Klein tunneling, electrostatic confinement of electrons in graphene is not possible. This hinders the use of graphene for quantum dot applications. Only through quasi-bound states with finite lifetime has one achieved to confine…
We theoretically study the effects of electron-electron interaction in twisted bilayer graphene in applied transverse dc electric field. When the twist angle is not very small, the electronic spectrum of the bilayer consists of four Dirac…
Experiments on graphene bilayers, where the top layer is rotated with respect to the one below, have displayed insulating behavior when the moir\'e bands are partially filled. We calculate the charge distributions in these phases, and…
Vertical graphene-based device concepts that rely on quantum mechanical tunneling are intensely being discussed in literature for applications in electronics and optoelectronics. In this work, the carrier transport mechanisms in…
The tight-binding model of a graphene bilayer is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or acceptors. The total Hartree energy is minimized and the…
Electronic properties of quantum dots (QDs) depend sensitively on their parent materials. Therefore, confined electronic states in graphene QDs (GQDs) of monolayer and Bernal-stacked bilayer graphene are quite different. Twisted bilayer…
Herein we discuss the fabrication of ballistic suspended graphene nanostructures supplemented with local gating. Using in-situ current annealing, we show that exceptional high mobilities can be obtained in these devices. A detailed…
Recent measurements have shown that a continuously tunable bandgap of up to 250 meV can be generated in biased bilayer graphene [Y. Zhang et al., Nature 459, 820 (2009)], opening up pathway for possible graphene-based nanoelectronic and…
We use a tight binding approach and density functional theory calculations to study the band structure of graphene/hexagonal boron nitride bilayer system in the most stable configuration. We show that an electric field applied in the…
The unique capabilities of capacitance measurements in bilayer graphene enable probing of layer-specific properties that are normally out of reach in transport measurements. Furthermore, capacitance measurements in the top-gate and…
Translocation of DNA through a nanopore with embedded electrodes is at the centre of new rapid inexpensive sequencing methods which allow distinguishing the four nucleobases by their different electronic structure. However, the subnanometer…
The rich phase diagram of quantum spin-ladder systems has attracted much attention in the theoretical literature. The progress in experimental realisations of this fascinating physics however has been much slower. While materials with a…
We show that gated bilayer graphene zigzag ribbons possess a fast and a slow edge, characterized by edge state velocities that differ due to non-negligible next-nearest-neighbor hopping elements. By applying bosonization and renormalization…
We discuss and compare two different types of confinement in bilayer graphene by top and bottom gating with symmetrical microelectrodes. Trivial confinement corresponds to the same polarity of all top gates, which is opposed to that of all…
We study the spin injection efficiency into single and bilayer graphene on the ferrimagnetic insulator Yttrium-Iron-Garnet (YIG) through an exfoliated tunnel barrier of bilayer hexagonal boron nitride (hBN). The contacts of two samples…
The recent discovery of methods to isolate graphene, a one-atom-thick layer of crystalline carbon, has raised the possibility of a new class of nano-electronics devices based on the extraordinary electrical transport and unusual physical…
Nanostructuring materials at small scales enables control over their physical properties, revealing behaviors not observed at larger dimensions. This strategy is particularly effective in two-dimensional (2D) materials, where surface…
Electric transport of double gated bilayer graphene devices is studied as a function of charge density and bandgap. A top gate electrode can be used to control locally the Fermi level to create a pn junction between the double-gated and…