相关论文: How branching can change the conductance of ballis…

Semiconductor nanostructures based on two dimensional electron gases (2DEGs) have the potential to provide new approaches to sensing, information processing, and quantum computation. Much is known about electron transport in 2DEG…

GaAs-based two-dimensional electron gases (2DEGs) show a wealth of remarkable electronic states, and serve as the basis for fast transistors, research on electrons in nanostructures, and prototypes of quantum-computing schemes. All these…

The pattern of branched electron flow revealed by scanning gate microscopy shows the distribution of ballistic electron trajectories. The details of the pattern are determined by the correlated potential of remote dopants with an amplitude…

We study transport properties of a two-dimensional electron gas, placed in a classically strong perpendicular magnetic field and in constant and oscillating in-plane electric fields. The analysis is based on a quantum Boltzmann equation…

Electronic matter waves traveling through the weak and smoothly varying disorder potential of a semi-conductor show branching behavior instead of a smooth spreading of flow. By transferring this phenomenon to optics, we show how the…

Phase transitions are characterized by a sharp change in the type of dynamics of microparticles, and their description usually requires quantum mechanics. Recently, a peculiar type of conductors was discovered in which two-dimensional (2D)…

We study dynamic nonequilibrium electron charging phenomena in ballistic molecular devices at room temperature that compromise their response to bias and whose nature is evidently distinguishable from static Schottky-type potential…

Recent images of electron flow through a two-dimensional electron gas (2DEG) device show branching behavior that is reproduced in numerical simulations of motion in a correlated random potential [cond-mat/0010348]. We show how such…

The magnetoresistance of a low carrier density, disordered GaAs based two-dimensional (2D) electron gas has been measured in parallel magnetic fields up to 32 T. The feature in the resistance associated with the complete spin polarization…

Many-body effects on tunneling of electrons in semiconductor nanowhiskers are investigated in a magnetic quantum limit. We consider the system with which bulk and edge states coexist. We show that interaction parameters of edge states are…

By combining quantum simulations of electron transport and scanning-gate microscopy, we have shown that the current transmitted through a semiconductor two-path rectangular network in the ballistic and coherent regimes of transport can be…

Two-dimensional electron gas coupled to adjacent impurity sites in high-frequency out-of-plane ac control electric field is investigated. Modification of tunneling rates as a function of the field amplitude is calculated. Nonlinear…

The curvature effect on the electronic states of a deformed cylindrical conducting surface of variable diameter is theoretically investigated. The quantum confinement of electrons normal to the curved surface results in an effective…

We study 95 split gates of different size on a single chip using a multiplexing technique. Each split gate defines a one-dimensional channel on a modulation-doped GaAs/AlGaAs heterostructure, through which the conductance is quantized. The…

Electron plasmas confined by an external magnetic field exhibit variations in a two-dimensional plane orthogonal to the confining magnetic field. A nonlinear fluid simulation code to investigate the properties of 2-D electron plasma wave…

We present a novel model to calculate vertical transport properties such as conductance and current in unintentionally disordered double barrier GaAs-Al$_x$Ga$_{1-x}$As heterostructures. The source of disorder comes from interface roughness…

We report on a study of quasi-ballistic transport in deep submicron, inhomogeneous semiconductor structures, focusing on the analysis of signatures found in the full nonequilibrium electron distribution. We perform self-consistent numerical…

We consider the role of the third dimension in the conductivity of a quasi 2D electron gas. If the transverse correlation radius of the scattering potential is smaller than the width of the channel, i.e. the width of the transverse electron…

Transport in a two-dimensional electron gas subject to an external magnetic field is analyzed in the presence of a \textit{longitudinal barrier.} We show that \textit{quantum interference of the edge states} bound by the longitudinal…

We study the effects of dissipation on electron transport in a semiconductor superlattice with an applied bias voltage and a magnetic field that is tilted relative to the superlattice axis.In previous work, we showed that although the…