相关论文: Field-effect mobility enhanced by tuning the Fermi…
Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability. This limited stability has been shown to result from the…
Topological insulators possess a non-conductive bulk and present surface states, henceforth, they are electrically conductive along their boundaries. Bismuth selenide ($Bi_2Se_3$) is one of the most promising topological insulators.…
We report the transport properties of mechanically exfoliated few-layer SnSe$_{2}$ flakes, whose mobility is found with four probe measurements to be ~ 85 cm$^{2}$V$^{-1}$s$^{-1}$ at 300 K, higher than those of the majority of few-layer…
Combining high resolution scanning tunneling microscopy and first principle calculations, we identified the major native defects, in particular the Se vacancies and Se interstitial defects that are responsible for the bulk conduction and…
Bi2Te3 compound has been theoretically predicted (1) to be a topological insulator, and its topologically non-trivial surface state with a single Dirac cone has been observed in photoemission experiments (2). Here we report that…
We have studied the electron transport properties of topological insulator-related material Bi2Se3 near the superconducting Pb-Bi2Se3 interface, and found that a superconducting state is induced over an extended volume in Bi2Se3. This state…
A newly discovered topological insulator (AgxPb1-xSe)5(Bi2Se3)3m, m=2, has a band gap of 0.5 eV, the largest value ever reported in topological insulators (TIs). We present a magnetoconductivity study of the Dirac electrons of this compound…
Interest in the superconducting proximity effect has been reinvigorated recently by novel optoelectronic applications as well as by the possible emergence of the elusive Majorana fermion at the interface between topological insulators and…
We theoretically investigate the possibility of establishing ferromagnetism in the topological insulator Bi2Se3 via magnetic doping of 3d transition metal elements. The formation energies, charge states, band structures, and magnetic…
A simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically-protected conducting surface states…
Dirac/Weyl semimetals hosting linearly-dispersing bands have received recent attention for potential thermoelectric applications, since their ultrahigh-mobility carriers could generate large thermoelectric and Nernst power factors. To…
We have performed angle-resolved photoemission spectroscopy on Tl0.5Bi2Te3, a possible topological superconductor derived from Bi2Te3. We found that the bulk Fermi surface consists of multiple three-dimensional hole pockets surrounding the…
We consider the transport properties of topological insulators surface states in the presence of uncorrelated point-like disorder, both in the classical and quantum regimes. The transport properties of those two-dimensional surface states…
The massless Dirac fermions residing on the surface of three-dimensional topological insulators are protected from backscattering and cannot be localized by disorder, but such protection can be lifted in ultrathin films when the…
In this report, we demonstrate that the energy gap in Cr-doped Bi2Se3 closes and reopens in oscillatory fashion with increasing sample thickness indicating the topological quantum phase transition driven by the quantum finite size effect.…
We discuss the ultrafast evolution of the surface electronic structure of the topological insulator Bi$_2$Te$_3$ following a femtosecond laser excitation. Using time and angle resolved photoelectron spectroscopy, we provide a direct…
The superconducting, transport, and structural properties of optimally electron-doped BaFe$_{1.9}$Ni$_{0.1}$As$_{2}$ are investigated by combining the electrical resistance and synchrotron X-ray diffraction measurements at high pressures.…
Among various topological insulators, Sn-doped Bi$_{1.1}$Sb$_{0.9}$Te$_{2}$S stands out for its exceptional properties. It has a wide energy gap and typically exhibits a well-isolated Dirac point and a Fermi level positioned within the gap.…
We report the growth of single-crystalline Bi2Se3 nanoribbons with lengths up to several millimeters via a catalyst-free physical vapor deposition method. Scanning transmission electron microscopy analysis reveals that the nanoribbons grow…
To further investigate the interplay between ferromagnetism and topological insulators, thin films of the low-carrier topological insulator (Bi$_x$Sb$_{1-x}$)$_2$Te$_3$ were deposited on the insulating ferromagnet EuS (100) in situ. AC…