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相关论文: Gated Conductance of Thin Indium Tin Oxide - The S…

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Absorption of light in superconducting electronics is a major limitation on the quality of circuit architectures that integrate optical components with superconducting components. A 10 nm thick film of a typical superconducting material…

In this work, we demonstrate high performance indium-tin-oxide (ITO) transistors with the channel thickness down to 1 nm and ferroelectric Hf0.5Zr0.5O2 as gate dielectric. On-current of 0.243 A/mm is achieved on sub-micron gate-length ITO…

应用物理 · 物理学 2020-12-24 Mengwei Si , Joseph Andler , Xiao Lyu , Chang Niu , Suman Datta , Rakesh Agrawal , Peide D. Ye

Flexible and transparent electronics presents a new era of electronic technologies. Ubiquitous applications involve wearable electronics, biosensors, flexible transparent displays, radio-frequency identifications (RFIDs), etc.Zinc oxide…

介观与纳米尺度物理 · 物理学 2017-02-21 Zhang Yong-Hui , Mei Zeng-Xia , Liang Hui-Li , Du Xiao-Long

Metal oxide thin films are of great interest in scientific advancement, particularly semiconductor thin films in transistors and in a wide range of optoelectronic applications. Many metal oxide thin films attract interest for their…

应用物理 · 物理学 2024-11-21 Darragh Buckley , Alex Lonergan , Colm O'Dwyer

Metal oxide thin-film transistors are fast becoming a ubiquitous technology for application in driving backplanes of organic light-emitting diode displays. Currently all commercial products rely on metal oxides processed via physical vapor…

Transparent conductive indium tin oxide (ITO) thin films, electrochemically intercalated with sodium or other cations, show tunable superconducting transitions with a maximum $T_c$ at 5 K. The transition temperature and the density of…

超导电性 · 物理学 2013-02-07 Ali E. Aliev , Ka Xiong , Kyeongjae Cho , M. B. Salamon

Junctionless oxide-based neuron thin-film transistors with in-plane-gate structure are fabricated at room temperature with a laser scribing process. The neuron transistors are composed of a bottom ITO floating gate and multiples of two…

材料科学 · 物理学 2012-10-19 Li Qiang Zhu , Guo Dong Wu , Ju Mei Zhou , Wei Dou , Hong Liang Zhang , Qing Wan

Transparent Conductive Oxides (TCOs) are a class of materials that combine high optical transparency with high electrical conductivity. This property makes them uniquely appealing as transparent-conductive electrodes in solar cells and…

Indium tin oxide (Sn-doped In$_2$O$_{3-\delta}$ or ITO) is an interesting and technologically important transparent conducting oxide. This class of material has been extensively studied for decades, with research efforts focusing on the…

介观与纳米尺度物理 · 物理学 2017-03-29 Juhn-Jong Lin , Zhi-Qing Li

Adapting electronics to perfectly conform to non-planar and rough surfaces, such as human skin, is a very challenging task which, if solved, could open up new applications in fields of high economic and scientific interest ranging from…

Future wearable electronics, displays and photovoltaic devices rely on highly conductive, transparent and yet mechanically flexible materials. Nowadays indium tin oxide (ITO) is the most wide spread transparent conductor in optoelectronic…

Indium tin oxide (ITO) film, which is the most commonly used transparent conductive film (TCF), has traditionally been believed to be transparent in the visible spectrum but to reflect infrared (IR) light beyond the plasma wavelength…

应用物理 · 物理学 2023-10-03 Ran Bi , Chuantao Zheng , William W. Yu , Weitao Zheng , Dingdi Wang

We analyze the transparency of a thin film of low refractive index (an optical glue or a bonding layer) placed between higher-index media and forming an opto-pair. Examples include a semiconductor light-emitting diode with attached lens or…

光学 · 物理学 2009-03-03 Arsen Subashiev , Serge Luryi

The class of transparent conductive oxides includes the material indium tin oxide (ITO) and has become a widely used material of modern every-day life such as in touch screens of smart phones and watches, but also used as an optically…

The notion of a spin field effect transistor, where transistor action is realized by manipulating the spin degree of freedom of charge carriers instead of the charge degree of freedom, has captivated researchers for at least three decades.…

介观与纳米尺度物理 · 物理学 2023-06-21 Supriyo Bandyopadhyay

We propose and investigate the intrinsically thinnest transistor concept: a monolayer ballistic heterojunction bipolar transistor based on a lateral heterostructure of transition metal dichalcogenides. The device is intrinsically thinner…

介观与纳米尺度物理 · 物理学 2021-06-02 Leonardo Lucchesi , Gaetano Calogero , Gianluca Fiori , Giuseppe Iannaccone

Transparent conducting oxides (TCOs) play an essential role in modern optoelectronic devices through their combination of electrical conductivity and optical transparency. We review recent progress in our understanding of multi-component…

材料科学 · 物理学 2013-09-18 Aron Walsh , Juarez L. F. Da Silva , Su-Huai Wei

The controlled tunability of superconductivity in low-dimensional materials may enable new quantum devices. Particularly in triplet or topological superconductors, tunneling devices such as Josephson junctions etc. can demonstrate exotic…

We reported here a high-performance In2O3/InZnO bilayer metal-oxide (BMO) thin-film transistor (TFT) using ultra-thin solution-processed ZrOx dielectric. A thin layer of In2O3 offers a higher carrier concentration, thereby maximizing the…

材料科学 · 物理学 2014-05-27 F. K. Shan , A. Liu , G. X. Liu , Y. Meng , B. C. Shin , E. Fortunato , R. Martins

We have used the classical Hall effect to electrically characterize Indium Tin Oxide (ITO) films grown by two different techniques on silica substrates. ITO films have the unique property that they can be both electrically conducting (and…

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