相关论文: Zero bias anomaly in a two dimensional granular in…
The Andreev transport through a quantum dot coupled to two external ferromagnetic leads and one superconducting lead is studied theoretically by means of the real-time diagrammatic technique in the sequential and cotunneling regimes. We…
Quantum materials near electronic or magnetic phase boundaries exhibit enhanced tunability, as their emergent properties become highly sensitive to external perturbations. Here, we demonstrate precise control of ferromagnetism in a…
We report the experimental realization of a correlated insulating phase in 2D GaAs/AlGaAs heterostructures at low electron densities in a limited window of background disorder. This has been achieved at mesoscopic length scales, where the…
The Kondo zero bias anomaly of Co adatoms probed by scanning tunneling microscopy is known to depend on the height of the tip above the surface, and this dependence is different on different low index Cu surfaces. On the (100) surface, the…
We study non-interacting electrons in disordered one-dimensional materials which exhibit a spectral gap, in each of the ten Altland-Zirnbauer symmetry classes. We define an appropriate topology on the space of Hamiltonians so that the…
A variational approach is used to study the superconductor-insulator transition in two-band granular superconducting films using a resistance-shunted Josephson junction array model in this letter. We show that a zero-temperature metallic…
We consider a spin valve composed of a superconducting film (S) between two ferromagnetic insulators (FI) on two sides. In the dirty limit the superconductor is described by Usadel equations. Appropriate boundary conditions were chosen for…
Recent experimental studies on strongly disordered indium oxide films have revealed an unusual first-order quantum phase transition between the superconducting and insulating states (SIT). This transition is characterized by a discontinuous…
Recent experimental results showing untypical nonlinear absorption and marked deviations from well known universality in the low temperature acoustic and dielectric losses in amorphous solids prove the need for improving the understanding…
The last several years have witnessed the rapid developments in the study and understanding of topological insulators. In this review, after a brief summary of the history of topological insulators, we focus on the recent progress made in…
Transport data on Bi, MoGe, and PbBi/Ge homogeneously-disordered thin films demonstrate that the critical resistivity, $R_c$, at the nominal insulator-superconductor transition is linearly proportional to the normal sheet resistance, $R_N$.…
We study the Coulomb interaction effects on the tunneling conductance of a contact constructed of two parallel quantum wires. The following contacts are considered: two clean identical quantum wires, two disordered identical quantum wires,…
Finding a clear signature of topological superconductivity in transport experiments remains an outstanding challenge. In this work, we propose exploiting the unique properties of three-dimensional topological insulator nanowires to generate…
The three-dimensional (3D) topological insulators (TIs), hosting topologically protected helical surface states, can be promoted into second-order TIs when a diagonal Zeeman term, typical of magnetic doping, is introduced. The latter hosts…
In two dimensions there is a direct superconductor-to-insulator quantum phase transition driven by increasing disorder. We elucidate, using a combination of inhomogeneous mean field theory and quantum Monte Carlo techniques, the nature of…
Material disorders are one of the major sources of noise and loss in solid-state quantum devices, whose behaviors are often modeled as two-level systems (TLSs) formed by charge tunneling between neighboring sites. However, the role of their…
Gaplessness was observed in the disordered films of MoC on approaching to the superconductor to insulator transition by reducing the film thickness. The gaplessness is attributed to the enhanced Coulomb interactions due to the loss of…
Thin-film transistors based on amorphous oxide semiconductors (AOS) are promising candidates for enabling further DRAM scaling and 3D integration, which are critical for advanced computing. Despite extensive research, the charge transport…
We correlate transmission electron microscope (TEM) pictures of superconducting In contacts to an AlGaAs/GaAs heterojunction with differential conductance spectroscopy performed on the same heterojunction. Metals deposited onto a (100)…
Topological Insulators (TI) are materials with novel quantum states which exhibit a bulk insulating gap while the edge/surface is conducting. This has been extensively explored in several Half-Heusler (HH) compounds hosting the exotic TI…