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相关论文: Valley blockade quantum switching in Silicon nanos…

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We investigate the optical control possibilities of spin-valley qubit carried by single electrons localized in nanostructures of monolayer TMDs, including small quantum dots formed by lateral heterojunction and charged impurities. The…

介观与纳米尺度物理 · 物理学 2016-01-28 Yue Wu , Qingjun Tong , Gui-Bin Liu , Hongyi Yu , Wang Yao

The aim of presented research is to design a nanodevice, based on a MoS$_2$ monolayer, performing operations on a well-defined valley qubit. We show how to confine an electron in a gate induced quantum dot within the monolayer, and to…

介观与纳米尺度物理 · 物理学 2018-05-24 J. Pawłowski , D. Żebrowski , S. Bednarek

Carbon nanotubes are a versatile material in which many aspects of condensed matter physics come together. Recent discoveries, enabled by sophisticated fabrication, have uncovered new phenomena that completely change our understanding of…

介观与纳米尺度物理 · 物理学 2015-08-04 E. A. Laird , F. Kuemmeth , G. Steele , K. Grove-Rasmussen , J. Nygård , K. Flensberg , L. P. Kouwenhoven

We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between…

The presence of valley states is a significant obstacle to realizing quantum information technologies in Silicon quantum dots, as leakage into alternate valley states can introduce errors into the computation. We use a perturbative…

介观与纳米尺度物理 · 物理学 2022-01-25 Donovan Buterakos , Sankar Das Sarma

We provide an atomistic tight-binding description of a few carriers confined in ambipolar (n-p) double quantum dots defined in a semiconducting carbon nanotube. We focus our attention on the charge state of the system in which Pauli…

介观与纳米尺度物理 · 物理学 2016-04-13 E. N. Osika , B. Szafran

Surface-gated quantum dots (QDs) in semiconductor heterostructures represent a highly attractive platform for quantum computation and simulation. However, in this implementation, the barriers through which the QD is tunnel-coupled to source…

We analyze the valley composition of one electron bound to a shallow donor close to a Si/barrier interface as a function of an applied electric field. A full six-valley effective mass model Hamiltonian is adopted. For low fields, the…

介观与纳米尺度物理 · 物理学 2012-08-09 A. Baena , A. L. Saraiva , Belita Koiller , M. J. Calderón

In solid, the crystalline structure can endow electron an internal degree of freedom known as valley, which characterizes the degenerate energy minima in momentum space. The recent success in optical pumping of valley polarization in 2D…

介观与纳米尺度物理 · 物理学 2017-03-07 Xing-Tao An , Jiang Xiao , M. W. -Y. Tu , Hongyi Yu , Vladimir I. Fal'ko , Wang Yao

We analyze the effects of valley interference on the quantum control and manipulation of an electron bound to a donor close to a Si/SiO2 interface as a function of the valley-orbit coupling at the interface. We find that, for finite…

介观与纳米尺度物理 · 物理学 2008-04-18 M. J. Calderon , Belita Koiller , S. Das Sarma

Research on Si quantum dot spin qubits is motivated by the long spin coherence times measured in Si, yet the orbital spectrum of Si dots is increased as a result of the valley degree of freedom. The valley degeneracy may be lifted by the…

介观与纳米尺度物理 · 物理学 2015-05-18 Dimitrie Culcer , Lukasz Cywinski , Qiuzi Li , Xuedong Hu , S. Das Sarma

Regardless of various material design strategies, experimentally achieving substantial and controllable valley splitting in Si/SiGe quantum wells remains a central challenge for ensuring high gate uniformity. This difficulty arises from…

介观与纳米尺度物理 · 物理学 2025-12-01 Yang Liu , Gang Wang , Shan Guan , Jun-Wei Luo , Shu-Shen Li

The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and…

An ambipolar $n$-$p$ double quantum dot defined by potential variation along a semiconducting carbon-nanotube is considered. We focus on the (1e,1h) charge configuration with a single excess electron in the conduction band state confined in…

介观与纳米尺度物理 · 物理学 2017-06-15 E. N. Osika , A. Chacón , M. Lewenstein , B. Szafran

We test the valley-filtering capabilities of a quantum dot inscribed by locally straining an $\alpha$-$\mathcal{T}_3$ lattice. Specifically, we consider an out-of-plane Gaussian bump in the center of a four-terminal configuration and…

介观与纳米尺度物理 · 物理学 2021-04-16 Alexander Filusch , Alan R. Bishop , Avadh Saxena , Gerhard Wellein , Holger Fehske

We present a solid-state implementation of ultrafast conditional quantum gates. Our proposal for a quantum-computing device is based on the spin degrees of freedom of electrons confined in semiconductor quantum dots, thus benefiting from…

凝聚态物理 · 物理学 2015-06-24 E. Pazy , E. Biolatti , T. Calarco , I. D'Amico , P. Zanardi , F. Rossi , P. Zoller

Pauli spin blockade in quantum dot systems occurs when the charge transport is allowed only for some spin states, and it has been an efficient tool in spin-based qubit devices in semiconductors. We theoretically investigate a Pauli spin…

介观与纳米尺度物理 · 物理学 2022-08-24 Yun-Pil Shim

Topological photonics has been introduced as a powerful platform for integrated optics, since it can deal with robust light transport, and be further extended to the quantum world. Strikingly, valley-contrasting physics in topological…

Both quantum transport measurements in the Pauli blockade regime and microwave cavity transmission measurements are important tools for spin-qubit readout and characterization. Based on a generalized input-output theory we derive a…

介观与纳米尺度物理 · 物理学 2024-11-28 Florian Ginzel , Guido Burkard

We consider low temperature transport through a lateral quantum dot asymmetrically coupled to two conducting leads, and tuned to the mixed-valence region separating two adjacent Coulomb blockade valleys with spin S=1/2 and S=1 on the dot.…

介观与纳米尺度物理 · 物理学 2007-05-23 M. Pustilnik , L. Borda