相关论文: Valley blockade quantum switching in Silicon nanos…

The selective control of specific momentum valleys lies at the core of valleytronics, a field that has thus far focused primarily on the $\mathbf{K}$ and $\mathbf{K'}$ valleys in transition metal dichalcogenides (TMDs). However, direct…

Topologically protected zero-line modes appear at the interface between two regions of the monolayer graphene in quantum anomalous Hall phase with different Chern number. In the presence of staggered sublattice potential, the band gaps of…

A dipolar gate alternative to the exchange gate based Kane quantum computer is proposed where the qubits are electron spins of shallow group V donors in silicon. Residual exchange coupling is treated as gate error amenable to quantum error…

The valley-orbit coupling in a few-electron Si quantum dot is expected to be a function of its occupation number N. We study the spectrum of multivalley Si quantum dots for 2 <= N <= 4, showing that, counterintuitively, electron-electron…

Valley-based electronics, known as valleytronics, is one of the keys to break through to a new stage of electronics. The valley degree of freedom is ubiquitous in the honeycomb lattice system. The honeycomb lattice structure of silicon…

In a two-level system, constituted by two serially coupled single level quantum dots, coupled to external leads we find that the current is suppressed in one direction of biasing caused by a fully occupied two-electron triplet state in the…

Using electrostatic gates to control the electron positions, we present a new controlled-NOT gate based on quantum dots. The qubit states are chosen to be the spin states of an excess conductor electron in the quantum dot; and the main…

Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate electron valley states, creating a low-lying excited state…

Pauli exclusion principle can lead to a supression of transport through double quantum dots, even if both quantum dots are connected by a resonant driving ac field. In this work, we study how this effect, known as spin blockade, can be…

An electron spin qubit in silicon quantum dots holds promise for quantum information processing due to the scalability and long coherence. An essential ingredient to recent progress is the employment of micromagnets. They generate a…

Multi-donor architecture in silicon offers a promising direction towards scalable solid-state qubits and quantum technologies operating at practical conditions. However, the overlap of multiple donor wave-functions develops a complex…

The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin-based qubits in solid-state form factors are attractive as they could potentially benefit from processes similar to those used for…

We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate electrodes allow us to independently tune the charge occupation…

The charging of a quantum box connected to a lead by a single-mode point contact is solved for arbitrary temperatures, tunneling amplitudes, and gate voltages, using a variant of Wilson's numerical renormalization group. The charge inside…

The energy spectrum and wave functions of electrons in a single silicon quantum dot provide valuable insights into the capabilities and limitations of such a system in quantum information processing. Here we investigate the low-lying…

The Hall conductivity $\sigma_{xy}$ of many condensed matter systems presents a step structure when a uniform perpendicular magnetic field is applied. We report the quantum Hall effect in buckled AB-bottom-top bilayer silicene and its…

Although electron spins in III-V semiconductor quantum dots have shown great promise as qubits, a major challenge is the unavoidable hyperfine decoherence in these materials. In group IV semiconductors, the dominant nuclear species are…

We develop a microscopic and atomistic theory of electron spin-based qubits in gated quantum dots in a single layer of transition metal dichalcogenides. The qubits are identified with two degenerate locked spin and valley states in a gated…

Hyperfine interaction (HFI) in carbon nanotube and graphene quantum dots is due to the presence of 13C atoms. We theoretically show that in these structures the short-range nature of the HFI gives rise to a coupling between the valley…

It is demonstrated that parallel weakly coupled quantum dots exhibit non-equilibrium blockade regimes caused by a full occupation in the spin triplet state, in analogy to the Pauli spin blockade in serially weakly coupled quantum dots.…