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相关论文: Dielectric Breakdown of a Mott Insulator

200 篇论文

High-temperature superconductivity emerges in the CuO$_2$ plane upon doping a Mott insulator. To ascertain the influence of Mott physics plus short-range correlations, we solve a three-band copper-oxide model in the charge-transfer regime…

强关联电子 · 物理学 2016-07-05 L. Fratino , P. Sémon , G. Sordi , A. -M. S. Tremblay

We study how strongly correlated electrons on a dissipative lattice evolve from equilibrium when driven by a constant electric field, focusing on the extent of the linear regime and hysteretic non-linear effects at higher fields. We access…

强关联电子 · 物理学 2015-06-18 Jiajun Li , Camille Aron , Gabriel Kotliar , Jong E Han

We theoretically propose a new route to control magnetic and topological orders in a broad class of insulating magnets with a DC electric field. We show from the strong-coupling expansion that magnetic exchange interactions along the…

强关联电子 · 物理学 2019-08-28 Kazuaki Takasan , Masahiro Sato

Using a nonequilibrium implementation of the extended dynamical mean field theory (EDMFT) we simulate the relaxation after photo excitation in a strongly correlated electron system with antiferromagnetic spin interactions. We consider the…

强关联电子 · 物理学 2018-06-20 Nikolaj Bittner , Denis Golež , Hugo U. R. Strand , Martin Eckstein , Philipp Werner

A Mott insulator sometimes induces unconventional superconductivity in its neighbors when doped and/or pressurized. Because the phase diagram should be strongly related to the microscopic mechanism of the superconductivity, it is important…

The recently observed superconductivity in twisted bilayer graphene emerges from insulating states believed to arise from electronic correlations. While there have been many proposals to explain the insulating behaviour, the…

强关联电子 · 物理学 2020-01-06 J. M. Pizarro , M. J. Calderón , E. Bascones

The formation of breakdown pattern on an insulating surface under the influence of a transverse magnetic field is theoretically investigated. We have generalized the Dielectric Breakdown Model (DBM) for the case of external magnetic field.…

等离子体物理 · 物理学 2007-05-23 Y. Ben-Ezra , Yurij V. Pershin , I. D. Vagner , P. Wyder

The ground state properties of a paramagnetic Mott insulator are investigated in the presence of an external electrical field using the inhomogeneous Gutzwiller approximation for a single band Hubbard model in a slab geometry. The metal…

强关联电子 · 物理学 2015-05-30 D. Nasr Esfahani , L. Covaci , F. M. Peeters

We report on a phenomenological study of superfluid to Mott insulator transitions of bosons on the triangular lattice, focusing primarily on the interplay between Mott localization and geometrical charge frustration at 1/2-filling. A…

强关联电子 · 物理学 2009-11-11 A. A. Burkov , Leon Balents

We use angle resolved photoemission spectroscopy to probe the electronic excitations of the non-superconducting state that exists between the antiferromagnetic Mott insulator at zero doping and the superconducting state at larger dopings in…

We establish the nonequilibrium thermal phases of a voltage driven antiferromagnetic Mott insulator in three dimensions, realised at steady state under a voltage bias. Starting from the Keldysh action for the half filled Hubbard model we…

强关联电子 · 物理学 2022-03-01 Arijit Dutta , Pinaki Majumdar

In this paper, we propose a new electrical breakdown mechanism for exciton insulators in the BCS limit, which differs fundamentally from the Zener breakdown mechanism observed in traditional band insulators. Our new mechanism results from…

介观与纳米尺度物理 · 物理学 2024-07-04 Yuelin Shao , Xi Dai

The transition voltage of an abrupt metal-insulator transition (MIT), observed by applying an electric field to two-terminal devices fabricated on a Mott insulator VO_2 film, decreases with increasing temperature up to 334K. The abrupt…

强关联电子 · 物理学 2007-05-23 Hyun-Tak Kim , B. G. Chae , D. H. Youn , S. L. Maeng , K. Y. Kang

Dynamical properties of photoexcited states are theoretically studied in a one-dimensional Mott insulator dimerized by the spin-Peierls instability. Numerical calculations combined with a perturbative analysis have revealed that the lowest…

强关联电子 · 物理学 2009-11-11 Nobuya Maeshima , Kenji Yonemitsu

Photo-excited quantum materials can be driven into thermally inaccessible metastable states that exhibit structural, charge, spin, topological and superconducting orders. Metastable states typically emerge on timescales set by the intrinsic…

Photo-induced metallic states in a Mott insulator are studied for the half-filled, one-dimensional Hubbard model with the time-dependent density matrix renormalization group. An irradiation of strong AC field is found to create a linear…

强关联电子 · 物理学 2009-11-13 Takashi Oka , Hideo Aoki

The Mott metal-insulator transition-a drastic manifestations of Coulomb interactions among electrons-is the first-order transition of clear discontinuity, as shown by various experiments and the celebrated dynamical mean-field theory.…

强关联电子 · 物理学 2018-03-01 Tetsuya Furukawa , Kazuhiko Kobashi , Yosuke Kurosaki , Kazuya Miyagawa , Kazushi Kanoda

For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…

强关联电子 · 物理学 2011-08-31 G. Sordi , K. Haule , A. -M. S. Tremblay

We study the electronic state of the doped Mott-Hubbard insulator within Dynamical Mean Field Theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both…

强关联电子 · 物理学 2009-11-11 A. Camjayi , R. Chitra , M. J. Rozenberg

At the Mott transition, electron-electron interaction changes a metal, in which electrons are itinerant, to an insulator, in which electrons are localized. This phenomenon is central to quantum materials. Here we contribute to its…

强关联电子 · 物理学 2019-02-20 C. Walsh , P. Sémon , D. Poulin , G. Sordi , A. -M. S. Tremblay