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相关论文: Edge states of graphene bilayer strip

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We study the problem of impurities and mid-gap states in a biased graphene bilayer. We show that the properties of the bound states, such as localization lengths and binding energies, can be controlled externally by an electric field…

介观与纳米尺度物理 · 物理学 2013-05-29 Johan Nilsson , A. H. Castro Neto

The electronic property of monolayer-bilayer hybrid graphene with a zigzag interface is studied by both the Dirac equation and numerical calculation. There are two types of zigzag interface stacks. The dispersion and local density of states…

介观与纳米尺度物理 · 物理学 2015-05-27 Zi-Xiang Hu , Wenxin Ding

Edge states in biased bilayer graphene in a magnetic field are studied within the four-band continuum model. The analysis is done for the semi-infinite graphene plane and for the graphene ribbon of a finite width, in the cases of zigzag and…

介观与纳米尺度物理 · 物理学 2013-11-19 P. K. Pyatkovskiy

We study the low energy edge states of bilayer graphene in a strong perpendicular magnetic field. Several possible simple boundaries geometries related to zigzag edges are considered. Tight-binding calculations reveal three types of edge…

介观与纳米尺度物理 · 物理学 2015-05-20 Victoria Mazo , Efrat Shimshoni , Herbert A. Fertig

The electronic spectra of rotationally faulted graphene bilayers are calculated using a continuum formulation for small fault angles that identifies two distinct electronic states of the coupled system. The low energy spectra of one state…

介观与纳米尺度物理 · 物理学 2012-01-04 E. J. Mele

By considering the continuous model for graphene, we analytically study a special gauge field for the edge state. The gauge field explains the properties of the edge state such as the existence only on the zigzag edge, the partial…

介观与纳米尺度物理 · 物理学 2007-05-23 Ken-ichi Sasaki , Shuichi Murakami , Riichiro Saito

We report the existence of zero energy surface states localized at zigzag edges of bilayer graphene. Working within the tight-binding approximation we derive the analytic solution for the wavefunctions of these peculiar surface states. It…

介观与纳米尺度物理 · 物理学 2008-01-16 Eduardo V. Castro , N. M. R. Peres , J. M. B. Lopes dos Santos , A. H. Castro Neto , F. Guinea

Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how…

介观与纳米尺度物理 · 物理学 2010-04-29 Eduardo V. Castro , N. M. R. Peres , J. M. B. Lopes dos Santos , F. Guinea , A. H. Castro Neto

Polarization resolved micro-Raman spectroscopy was carried out at the edges of bilayer graphene. We find strong dependence of the intensity of the G band on the incident laser polarization, with its intensity dependence being 90 degrees out…

介观与纳米尺度物理 · 物理学 2015-05-19 Milan Begliarbekov , Onejae Sul , Sokratis Kalliakos , Eui-Hyeok Yang , Stefan Strauf

Electronic properties of bilayer and multilayer graphene have generally been interpreted in terms of AB or Bernal stacking. However, it is known that many types of stacking defects can occur in natural and synthetic graphite; rotation of…

材料科学 · 物理学 2011-11-09 J. M. B. Lopes dos Santos , N. M. R. Peres , A. H. Castro Neto

The electronic shell and supershell structure of triangular graphene quantum dots has been studied using density functional and tight-binding methods. The density functional calculations demonstrate that the electronic structure close to…

介观与纳米尺度物理 · 物理学 2009-11-13 J. Akola , H. P. Heiskanen , M. Manninen

A model of a superlattice consisting of alternating strips of single-layer and bilayer graphene is proposed, whose parameters of the energy spectrum can be controlled by changing the external electric field perpendicular to the surface of…

介观与纳米尺度物理 · 物理学 2020-12-16 V. L. Abdrakhmanov , P. V. Badikova D. V. Zav'yalov , V. I. Konchenkov , S. V. Kryuchkov

We present an analytical description of pi electrons of a finite size bilayer graphene within a framework of the tight-binding model. The bilayered structures considered here are characterized by a rectangular geometry and have a finite…

介观与纳米尺度物理 · 物理学 2015-03-17 J. Ruseckas , G. Juzeliunas , I. V. Zozoulenko

An extraordinary low vacuum barrier height of 2.30 eV has been found on the zigzag-edge of graphene terminated with the secondary amine via the ab initio calculation. This edge structure has a flat band of edge states attached to the gamma…

材料科学 · 物理学 2012-09-05 Weiliang Wang , Zhibing Li

We study the electronic structure of graphene in the presence of either sevenfolds or eightfolds by using a gauge field-theory model. The graphene sheet with topological defects is considered as a negative cone surface with infinite…

材料科学 · 物理学 2009-11-13 D. V. Kolesnikov , V. A. Osipov

The X-ray edge singularity of bilayer graphene is studied by generalizing the path integral approach based on local action which was employed for monolayer graphene. In sharp contrast to the case of monolayer graphene, the bilayer graphene…

强关联电子 · 物理学 2015-05-20 Hyun C. Lee

We study the influence of different edge types on the electronic density of states of graphene nanostructures. To this end we develop an exact expansion for the single particle Green's function of ballistic graphene structures in terms of…

介观与纳米尺度物理 · 物理学 2015-03-19 J. Wurm , K. Richter , I. Adagideli

Twisted bilayer graphene with a twist angle of around 1.1{\deg} features a pair of isolated flat electronic bands and forms a strongly correlated electronic platform. Here, we use scanning tunneling microscopy to probe local properties of…

Bilayer graphene nanoribbon with zigzag edge is investigated with the tight binding model. Two stacking structures, alpha and beta, are considered. The band splitting is seen in the alpha structure, while the splitting in the wave number…

介观与纳米尺度物理 · 物理学 2012-11-21 Kikuo Harigaya , Hiroshi Imamura , Katsunori Wakabayashi , Osman Ozsoy

The ``band-structure'' of a disordered stripe array is computed and compared, at a qualitative level, to angle resolved photoemission experiments on the cuprate high temperature superconductors. The low-energy states are found to be…

超导电性 · 物理学 2009-11-07 M. Granath , V. Oganesyan , D. Orgad , S. A. Kivelson
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