相关论文: Levy Flight of Holes in InP Semiconductor Scintill…

Spatial spread of minority carriers produced by optical excitation in semiconductors is usually well described by a diffusion equation. The classical diffusion process can be viewed as a result of a random walk of particles in which every…

We study the photoluminescence spectra excited at an edge side of n-InP slabs and observed from the broadside. In a moderately doped sample the intensity drops off as a power-law function of the distance from the excitation - up to several…

We study the photoluminescence spectra of n-doped InP bulk wafers, both in the reflection and the transmission geometries relative to the excitation beam. From the observed spectra we estimate the spatial distribution of minority carriers…

Implementation of a semiconductor as a scintillator with a lattice-matched surface photo-diode for radiation detection requires efficient luminescence collection. Low and heavily doped bulk n-InP has been studied to optimize luminescence…

Photon trajectories in incoherent radiation trapping for Doppler, Lorentz and Voigt line shapes under complete frequency redistribution are shown to be Levy flights. The jump length (r) distributions display characteristic long tails. For…

We propose a new scintillation-type detector in which high-energy radiation produces electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The…

Multiple scattering of light by resonant vapor is characterized by L\'evy-type superdiffusion with a single-step size distribution $p(x)\propto 1/x^{1+\alpha}$. We investigate L\'evy flight of light in a hot rubidium vapor…

We study the spatial distribution of minority carriers arising from their anomalous photon-assisted diffusion upon photo-excitation at an edge of n-InP slab for temperatures ranging from 300 K to 78 K. The experiment provides a realization…

Minority carrier diffusion lengths in low-doped n-InGaAs using InP/InGaAs double-heterostructures are reported using a simple electrical technique. The contributions from heavy and light holes are also extracted using this methodology,…

We investigate multiple scattering of near-resonant light in a Doppler-broadened atomic vapor. We experimentally characterize the length distribution of the steps between successive scattering events. The obtained power law is…

Electronic trap states are a critical yet unavoidable aspect of semiconductor devices, impacting performance of various electronic devices such as transistors, memory devices, solar cells, and LEDs. The density, energy level, and position…

The diverse Lyman-alpha (Ly$\alpha$) line profiles are essential probes of gas in and around galaxies. While isotropic models can successfully reproduce a range of Ly$\alpha$ observables, the correspondence between the model and actual…

Multiple scattering of light by resonant vapor is characterized by Levy-type superdiffusion with a step size distribution $P(x) \propto 1/x^{1+{\alpha}}$, with $0 < {\alpha} < 2$. The Levy parameter ${\alpha}$ was measured from $P(x)$,…

Unravelling the nature of energy transport in multi-chromophoric photosynthetic complexes is essential to extract valuable design blueprints for light-harvesting applications. Long-range exciton transport in such systems is facilitated by a…

With a state-of-the-art numerical method for solving the integral-differential equation of radiative transfer, we investigate the flux of the Ly$\alpha$ photon $\nu_0$ emergent from an optically thick halo containing a central light source.…

We optimized micro-holes in a thin slab for fast Si photodetectors at wavelength 800-950nm. Lateral modes are shown to be responsible for the effective light trapping. Small disorder and cone hole shapes helped achieve uniform quantum…

Characterizing intrinsic defects is an important step in evaluating materials for new optoelectronic device applications. For photomultipliers, suppressing dark currents is critical, but there exists a tradeoff between maximizing the band…

The multiple scattering of photons in a hot, resonant, atomic vapor is investigated and shown to exhibit a L\'evy Flight-like behavior. Monte Carlo simulations give insights into the frequency redistribution process that originates the long…

We analyze the possibility of evaluation of the thickness and refractive index of the stagnant layer in concentrated suspensions of nanoparticles through the transport characteristics of scattered light photons. The analysis is based on a…

The hole diffusion length in n-InGaAs is extracted for two samples of different doping concentrations using a set of long and thin diffused junction diodes separated by various distances on the order of the diffusion length. The methodology…