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相关论文: Ordered Loop Current States in Bilayer Graphene

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Graphene, a one-layer honeycomb lattice of carbon atoms, exhibits unconventional phenomena and attracts much interest since its discovery. Recently, an unexpected Mott-like insulator state induced by moir\'e pattern and a superconducting…

介观与纳米尺度物理 · 物理学 2019-11-22 Yao Wang , Yi-Jun Chang , Jun Gao , Yong-Heng Lu , Zhi-Qiang Jiao , Fang-Wei Ye , Xian-Min Jin

Spontaneous symmetry-breaking, where the ground state of a system has lower symmetry than the underlying Hamiltonian, is ubiquitous in physics. It leads to multiply-degenerate ground states, each with a different "broken" symmetry labeled…

介观与纳米尺度物理 · 物理学 2015-06-15 Jonathan S. Alden , Adam W. Tsen , Pinshane Y. Huang , Robert Hovden , Lola Brown , Jiwoong Park , David A. Muller , Paul L. McEuen

We argue that at finite carrier density and large displacement fields, bilayer graphene is prone to $\ell =0$ and $\ell = 1$ Pomeranchuk Fermi surface instabilities. The broken symmetries are driven by non-local exchange interactions which…

介观与纳米尺度物理 · 物理学 2015-07-08 Jeil Jung , Marco Polini , Allan H. MacDonald

We propose a model of spin-polarized-current state for electrons in bilayer graphene. The model resolves the puzzles as revealed by experiments that (a) the energy gap $E_{\rm gap}$ of the insulating ground state at the charge neutrality…

强关联电子 · 物理学 2014-05-14 Xin-Zhong Yan , C. S. Ting

Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how…

介观与纳米尺度物理 · 物理学 2010-04-29 Eduardo V. Castro , N. M. R. Peres , J. M. B. Lopes dos Santos , F. Guinea , A. H. Castro Neto

Twisted bilayer graphene offers a unique bilayer two-dimensional-electron system where the layer separation is only in sub-nanometer scale. Unlike Bernal-stacked bilayer, the layer degree of freedom is disentangled from spin and valley,…

Charge neutral bilayer graphene has a gapped ground state as transport experiments demonstrate. One of the plausible such ground states is layered antiferromagnetic spin density wave (LAF) state, where the spins in top and bottom layers…

介观与纳米尺度物理 · 物理学 2013-12-11 Jie Yuan , Dong-Hui Xu , Hao Wang , Yi Zhou , Jin-Hua Gao , Fu-Chun Zhang

We propose a new system where electron and hole states are electrostatically confined into a quantum ring in bilayer graphene. These structures can be created by tuning the gap of the graphene bilayer using nanostructured gates or by…

介观与纳米尺度物理 · 物理学 2015-05-14 M. Zarenia , J. M. Pereira , F. M. Peeters , G. A. Farias

We use a perturbative renormalization group approach with short-range continuum model interactions to analyze the competition between isotropic gapped and anisotropic gapless ordered states in bilayer graphene, commenting specifically on…

强关联电子 · 物理学 2015-03-20 Fan Zhang , Hongki Min , A. H. MacDonald

In this paper we consider the interaction of electrons in bilayer graphene with a constant homogeneous magnetic field which is orthogonal to the bilayer surface. Departing from the energy eigenstates of the effective Hamiltonian, the…

量子物理 · 物理学 2020-07-07 David J. Fernández C. , Dennis I. Martínez-Moreno

Double layer graphene is a gapless semiconductor which develops a finite gap when the layers are placed at different electrostatic potentials. We study, within the tight-biding approximation, the electronic properties of the gaped graphene…

介观与纳米尺度物理 · 物理学 2007-11-26 Eduardo V. Castro , N. M. R. Peres , J. M. B. Lopes dos Santos

The absence of an energy gap separating valence and conduction bands makes the low-energy electronic properties of graphene and its multi-layers sensitive to electron-electron interactions. In bilayers, for instance, interactions are…

We propose that a weakly spontaneous charge-ordered insulating state probably exists in Bernal-stacked bilayer graphene which can account for experimentally observed non-monotonic behavior of resistance as a function of the gated field,…

介观与纳米尺度物理 · 物理学 2024-04-02 Xiu-Cai Jiang , Ze-Yi Song , Ze Ruan , Yu-Zhong Zhang

Bilayer graphene has attracted considerable interest due to the important role played by many-body effects, particularly at low energies. Here we report local compressibility measurements of a suspended graphene bilayer. We find that the…

介观与纳米尺度物理 · 物理学 2011-05-05 Jens Martin , Benjamin E. Feldman , R. Thomas Weitz , Monica T. Allen , Amir Yacoby

Gated bilayer graphene exhibits spin-degenerate gapless states with a topological character localized at stacking domain walls. These states allow for one-dimensional currents along the domain walls. We herein demonstrate that these…

介观与纳米尺度物理 · 物理学 2019-06-19 W. Jaskólski , A. Ayuela

In bilayer graphene, the phase diagram in the plane of a strain-induced bare nematic term, ${\cal N}_{0}$, and a top-bottom gates voltage imbalance, $U_{0}$, is obtained by solving the gap equation in the random-phase approximation. At…

强关联电子 · 物理学 2012-09-26 E. V. Gorbar , V. P. Gusynin , V. A. Miransky , I. A. Shovkovy

Nontrivial interacting phases can emerge in elementary materials. As a prime example, continuing advances in device quality have facilitated the observation of a variety of spontaneous quantum Hall-like states, a cascade of Stoner-like…

介观与纳米尺度物理 · 物理学 2024-08-30 Felix Winterer , Fabian R. Geisenhof , Noelia Fernandez , Anna M. Seiler , Fan Zhang , R. Thomas Weitz

We demonstrate that single layer graphene exhibits the electronic structure of a bilayer when it is connected to two gated bilayers. The energy gap characteristic for gated bilayer is induced in the single layer and it persists for…

介观与纳米尺度物理 · 物理学 2019-07-31 Wlodzimierz Jaskolski

We demonstrate the existence of a new type of zero energy state associated to vacancies in multilayer graphene that has a finite amplitude over the layer with a vacancy and adjacent layers, and the peculiarity of being quasi-localized in…

材料科学 · 物理学 2010-02-05 Eduardo V. Castro , María P. López-Sancho , María A. H. Vozmediano

We investigate electronic transport in gapped bilayer graphene (gBLG) devices. For certain edge terminations -typically a combination of zigzag, armchair, and bearded types - we observe edge state conduction within the band gap, which is…

介观与纳米尺度物理 · 物理学 2025-11-27 Jesús Arturo Sánchez-Sánchez , Thomas Stegmann