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相关论文: Atomistic Mechanisms of Nonlinear Graphene Growth …

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Although the corresponding carbon-metal interactions can be very different, a similar nonlinear growth behavior of graphene has been observed for different metal substrates. To understand this interesting experimental observation, a…

材料科学 · 物理学 2013-09-10 Huijun Jiang , Ping Wu , Zhonghuai Hou , Zhenyu Li , Jinlong Yang

Graphene, a hexagonal sheet of $sp^2$-bonded carbon atoms, has extraordinary properties which hold immense promise for future nanoelectronic applications. Unfortunately, the popular preparation methods of micromechanical cleavage and…

介观与纳米尺度物理 · 物理学 2015-05-20 Andrew Zangwill , Dimitri D. Vvedensky

Epitaxial graphene grown on metallic substrates presents, in several cases, a long-range periodic structure due to a lattice mismatch between the graphene and the substrate. For instance, graphene grown on Ir(111), displays a corrugated…

Epitaxial growth via chemical vapor deposition is considered to be the most promising way towards synthesizing large area graphene with high quality. However, it remains a big theoretical challenge to reveal growth kinetics with atomically…

化学物理 · 物理学 2015-09-30 Huijun Jiang , Zhonghuai Hou

Graphene, a flat monolayer of carbon atoms packed tightly into a two dimensional hexagonal lattice, has unusual electronic properties which have many promising nanoelectronic applications. Recent Low Energy Electron Microscopy (LEEM)…

材料科学 · 物理学 2016-02-05 J H Lloyd-Williams

Graphene forms from a relatively dense, tightly-bound C-adatom gas, when elemental C is deposited on or segregates to the Ru(0001) surface. Nonlinearity of the graphene growth rate with C adatom density suggests that growth proceeds by…

材料科学 · 物理学 2010-12-14 E. Loginova , N. C. Bartelt , P. J. Feibelman , K. F. McCarty

The growth process of single layer graphene with and without substrate is investigated using ab initio, finite temperature molecular dynamic calculations within density functional theory. An understanding of the epitaxial graphene growth…

材料科学 · 物理学 2012-06-27 V. Ongun Özçelik , S. Cahangirov , S. Ciraci

In this thesis we present a kinetic Monte Carlo model for the description of epitaxial graphene growth. Experimental results suggest a growth mechanism by which clusters of 5 carbon atoms are an intermediate species necessary for nucleation…

介观与纳米尺度物理 · 物理学 2012-04-03 B. Monserrat

It is significant to prepare large area of high quality graphene for the study of the characteristics of graphene and the research of the nano-devices based on graphene. This paper summarizes the experiment progresses and mechanism of…

介观与纳米尺度物理 · 物理学 2012-03-01 Tian Yuan , Zhao Qian-Ying , Hu Jing , Zhou Chen , Miao Ling , Jiang Jian-Jun

Based on first-principles calculations we predict a peculiar growth process, where carbon adatoms adsorbed to graphene readily diffuse above room temperature and nucleate segments of linear carbon chains attached to graphene. These chains…

材料科学 · 物理学 2011-05-03 C. Ataca , S. Ciraci

We use low-energy electron microscopy to investigate how graphene grows on Cu(111). Graphene islands first nucleate at substrate defects such as step bunches and impurities. A considerable fraction of these islands can be rotationally…

材料科学 · 物理学 2011-10-20 S. Nie , J. M. Wofford , N. C. Bartelt , O. D. Dubon , K. F. McCarty

A basic kinetic model that incorporates a coupled dynamics of the carbon atoms and dimers on a copper surface is used to compute growth of a single-layer graphene island. The speed of the island's edge advancement on Cu[111] and Cu[100]…

材料科学 · 物理学 2016-07-06 Mikhail Khenner

We demonstrate the growth of graphene nanocrystals by molecular beam methods that employ a solid carbon source, and that can be used on a diverse class of large area dielectric substrates. Characterization by Raman and Near Edge X-ray…

A single-crystal sheet of graphene is synthesized on the low-symmetry substrate Ir(110) by thermal decomposition of C$_2$H$_4$ at 1500 K. Using scanning tunneling microscopy, low-energy electron diffraction, angle-resolved photoemission…

The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of single-layer graphene is clearly apparent in Raman spectra which…

Understanding the atomistic mechanism in graphene growth is crucial for controlling the number of layers or domain sizes to meet practical needs. In this work, focusing on the growth of graphene by chemical vapor deposition on copper…

材料科学 · 物理学 2024-06-12 Tongtong Wang , Jian Zheng , Xin Wei , Dajun Shu

As undesirable defects, grain boundaries (GBs) are widespread in epitaxial graphene using existing growth methods on metal substrates. Employing density functional theory calculations, we first identify that the misorientations of carbon…

材料科学 · 物理学 2015-06-03 Wei Chen , Hua Chen , Haiping Lan , Ping Cui , Tim P. Schulze , Wenguang Zhu , Zhenyu Zhang

Chemical vapor deposition (CVD) is an important method to synthesis grapheme on a substract. Recently, Cu becomes the most popular CVD substrate for graphene growth. Here, we combine electronic structure calculation, molecular dynamics…

材料科学 · 物理学 2011-09-14 Wenhua Zhang , Ping Wu , Zhenyu Li , Jinlong Yang

We have studied the incommensurate moir\'e structure of epitaxial graphene grown on iridium(111) by dynamic low energy electron diffraction [LEED-I(V)] and non-contact atomic force microscopy (AFM) with a CO terminated tip. Our LEED-I(V)…

Nucleation and growth mechanisms of short chains of carbon atoms on single-layer, hexagonal boron nitride (h-BN), and short BN chains on graphene are investigated using first-principles plane wave calculations. Our analysis starts with the…

介观与纳米尺度物理 · 物理学 2013-01-17 V. Ongun Özçelik , S. Ciraci
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