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We study the doping driven Mott metal-insulator transition (MIT) in the periodic Anderson model set in the Mott-Hubbard regime. A striking asymmetry for electron or hole driven transitions is found. The electron doped MIT at larger U is…

强关联电子 · 物理学 2011-04-06 G. Sordi , A. Amaricci , M. J. Rozenberg

The microscopic mechanism by which doped holes disrupt the antiferromagnetic order is one of the fundamental questions in cuprates. In this work, we propose a unified microscopic theory in which doped holes form spatially localized…

强关联电子 · 物理学 2026-05-19 Xiaodong Wang , Ping Xu , Jiong Mei , Shao-Hang Shi , Zi-Xiang Li , Mingpu Qin , Kun Jiang , Hui-Ke Jin

Photo-doping of Mott insulators or correlated metals can create an unusual metallic state which simultaneously hosts hole-like and electron-like particles. We study the dynamics of this state up to long times, as it passes its kinetic…

强关联电子 · 物理学 2021-05-26 Nagamalleswararao Dasari , Jiajun Li , Philipp Werner , Martin Eckstein

The phase diagram of the high-Tc cuprates is dominated by the Mott insulating phase of the parent compounds. As we approach it from large doping, a standard Fermi-liquid gradually turns into a bad non-Fermi liquid metal, a process which…

强关联电子 · 物理学 2014-04-29 Luca de' Medici , Gianluca Giovannetti , Massimo Capone

Trial wavefunctions, constructed explicitly from the unique 2-dimensional Mott insulating state with antiferromagnetic order, are proposed to describe the low-energy states of a Mott insulator slightly doped with holes or electrons. With…

强关联电子 · 物理学 2009-11-07 T. K. Lee , Chang-Ming Ho , Naoto Nagaosa , Wei-Cheng Lee

We develop a theory of a hybrid state, where quasi-particles coexist with strong collective modes, taking as a starting point a model of infinitely many 1D Mott insulators coupled by a weak interchain tunneling. This state exists at an…

超导电性 · 物理学 2009-11-10 F. H. L. Essler , A. M. Tsvelik

The competition between antiferromagnetism and hole motion in two-dimensional Mott insulators lies at the heart of a doping-dependent transition from an anomalous metal to a conventional Fermi liquid. Condensed matter experiments suggest…

We investigate the evolution of the Mott insulators in the triangular lattice Hubbard Model, as a function of hole doping $\delta$ in both the strong and intermediate coupling limits. Using the advanced density matrix renormalization group…

强关联电子 · 物理学 2022-06-17 Zheng Zhu , D. N. Sheng , Ashvin Vishwanath

It is widely recognised that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high $T_{\rm c}$ cuprates. The doping effect, including the electron-hole doping…

We study the electronic state of the doped Mott-Hubbard insulator within Dynamical Mean Field Theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both…

强关联电子 · 物理学 2009-11-11 A. Camjayi , R. Chitra , M. J. Rozenberg

Nesting in a semimetal can lead to an excitonic insulator state with spontaneous coherence between conduction and valence bands and a gap for charged excitations. In this paper we present a theory of the ferromagnetic state that occurs when…

强关联电子 · 物理学 2009-11-07 E. Bascones , A. A. Burkov , A. H. MacDonald

We study a simple model for $f$-electron systems, the three-dimensional periodic Anderson model, in which localized $f$ states hybridize with neighboring $d$ states. The $f$ states have a strong on-site repulsion which suppresses the double…

强关联电子 · 物理学 2009-11-07 Thereza Paiva , Gokhan Esirgen , Richard T. Scalettar , Carey Huscroft , A. K. McMahan

We apply the spin-fermion model to study the normal state and pairing instability in electron-doped cuprates near the antiferromagnetic QCP. Peculiar frequency dependencies of the normal state properties are shown to emerge from the…

超导电性 · 物理学 2009-11-11 Pavel Krotkov , Andrey V. Chubukov

We study the effects of electron-electron interactions and hole doping on the electronic structure of Cu-doped NaFeAs using the density functional theory plus dynamical mean-field theory (DFT+DMFT) method. In particular, we employ an…

强关联电子 · 物理学 2021-04-14 S. L. Skornyakov , V. I. Anisimov , I. Leonov

We investigate an experimental toy-model system of a pseudospin-half square-lattice Hubbard Hamiltonian in [(SrIrO3)1/(CaTiO3)1] to include both nontrivial complex hopping and moderate electronic correlation. While the former induces…

We study the Mott metal-insulator transition in the Periodic Anderson Model within Dynamical Mean Field Theory (DMFT). Near the quantum transition, we find a non-Fermi liquid metallic state down to a vanishing temperature scale. We identify…

强关联电子 · 物理学 2011-04-06 A. Amaricci , G. Sordi , M. J. Rozenberg

We derive the disorder vs. doping phase diagram of the doped Hubbard model via Dynamical Mean Field Theory combined with Typical Medium Theory, which allows the description of both Mott (correlation driven) and Anderson (disorder driven)…

强关联电子 · 物理学 2021-06-24 Nathan Giovanni , Marcello Civelli , Maria C. O. Aguiar

We investigate the influence of an unoccupied band on the transport properties of a strongly correlated electron system. For that purpose, additional orbitals are coupled to a Hubbard model via hybridization. The filling is one electron per…

凝聚态物理 · 物理学 2009-10-28 Stefan Blawid , Hoangh Anh Tuan , Takashi Yanagisawa , Peter Fulde

The problem of a mobile hole doped into an antiferromagnet Mott insulator is believed to underly the rich physics of several paradigmatic strongly correlated electron systems, ranging from heavy fermions to high-Tc superconductivity.…

强关联电子 · 物理学 2025-12-02 Piotr Wrzosek , Krzysztof Wohlfeld , Eugene A. Demler , Annabelle Bohrdt , Fabian Grusdt

The parent compound of cuprates is a charge-transfer-type Mott insulator with strong hybridization between the Cu $3d_{\mathrm x^2-y^2}$ and O $2p$ orbitals. A key question concerning the pairing mechanism is the behavior of doped holes in…

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