相关论文: Small-Signal Capacitance and Current Parameter Mod…

By considering the direction of charge carriers and the conservation of probablity current the transmission properties of graphene Zener tunnelling nano-devices were obtained. The scattering properties were then used with an adaptation of…

The generalized self-consistent field method is used to describe intraband relaxation processes in a general multiband electronic system with presumably weak residual electron-electron interactions. The resulting memory-function…

Planar electrodes patterned on a ferroelectric substrate are shown to provide lateral control of the conductive state of a two-terminal graphene stripe. A multi-level and on-demand memory control of the graphene resistance state is…

We measure the complex impedance between source/drain electrodes and the gate electrode of a pentacene thin-film transistor (TFT) at frequencies 50 Hz < omega/2pi < 20 kHz. Modeling the TFT as a distributed RC network (RC transmission…

The use of graphene in spintronic devices is contingent on its ability to convert a spin current into a charge current. We have systematically investigated the spin pumping induced spin-to-charge current conversion at the Graphene/FM…

Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate…

The static linearity performance metrics of the GFET transconductor are studied and modeled. Closed expressions are proposed for second and third order harmonic distortion (HD2, HD3), second and third order intermodulation distortion…

Microwave transmission line spectroscopy is used to observe the integer quantum Hall effect in two samples of monolayer graphene with different geometries that are resistively-coupled to a coplanar waveguide. We find plateaus in transmitted…

We study the consequences of negative differential electron mobility in insulated gate field effect transistors (FETS) using the field model. We show that, in contrast to the case of the monotonic velocity saturation model, the field…

With the motivation of improving the performance and reliability of aggressively scaled nano-patterned graphene field-effect transistors, we present the first systematic experimental study on charge and current distribution in multilayer…

We investigate the optical properties of edge-functionalized graphene nanosystems, focusing on the formation of junctions and charge transfer excitons. We consider a class of graphene structures which combine the main electronic features of…

We propose the concept, synthesis, analysis, and design of graphene-based plasmonic tunable low-pass filters operating in the THz band. The proposed structure is composed of a graphene strip transferred onto a dielectric and a set of…

Negative differential conductance and tunneling characteristics of two-terminal graphene devices are observed before and after electric breakdown, respectively. The former is caused by the strong scattering under a high E-field, and the…

Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two…

We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that…

We observe very small gate-voltage shifts in the transfer characteristic of as-prepared graphene field-effect transistors (GFETs) when the pH of the buffer is changed. This observation is in strong contrast to Si-based ion-sensitive FETs.…

Using ab initio density functional theory and quantum transport calculations based on nonequilibrium Green's function formalism we study structural, electronic, and transport properties of hydrogen-terminated short graphene nanoribbons…

Transistors operating at high frequencies are the basic building blocks of millimeter-wave communication and sensor systems. The high velocity and mobility of carriers in graphene can open way for ultra-fast group IV transistors with…

We present a detailed study of the high-current transport properties of graphene devices patterned in a four-point configuration. The current tends to saturate as the voltage across graphene is increased but never reaches the complete…

we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed graphene devices retain high field effect mobility and have…