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相关论文: Spintronic devices on the base of magnetic nanostr…

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Spintronics is a field of electronics based on using the electron spin instead of its charge. The recent advance in the manipulation of pure spin currents, i.e. angular momentum transfer not associated to conventional charge currents, has…

We have studied the electron transport in SiO${}_2$(Co)/GaAs and SiO${}_2$(Co)/Si heterostructures, where the SiO${}_2$(Co) structure is the granular SiO${}_2$ film with Co nanoparticles. In SiO${}_2$(Co)/GaAs heterostructures giant…

介观与纳米尺度物理 · 物理学 2015-05-13 L. V. Lutsev , A. I. Stognij , N. N. Novitskii

We present the first spintronic semiconductor field effect transistor. The injector and collector contacts of this device were made from magnetic permalloy thin films with different coercive fields so that they could be magnetized either…

介观与纳米尺度物理 · 物理学 2009-10-31 S. Gardelis , C. G Smith , C. H. W. Barnes , E. H. Linfield , D. A. Ritchie

Over the past two decades, the research of (Ga,Mn)As has led to a deeper understanding of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries of new effects and demonstrations of unprecedented…

The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin…

介观与纳米尺度物理 · 物理学 2016-11-15 Wenjing Yan , Oihana Txoperena , Roger Llopis , Hanan Dery , Luis E. Hueso , Fèlix Casanova

Spintronics is an approach to electronics in which the spin of the electrons is exploited to control the electric resistance R of devices. One basic building block is the spin-valve, which is formed if two ferromagnetic electrodes are…

介观与纳米尺度物理 · 物理学 2016-08-16 Sangeeta Sahoo , Takis Kontos , Jürg Furer , Christian Hoffmann , Matthias Gräber , Audrey Cottet , Christian Schönenberger

Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope…

Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga,Mn)As based devices, but using very dissimilar experimental schemes and device…

介观与纳米尺度物理 · 物理学 2009-11-11 C. Gould , K. Pappert , C. Rüster , R. Giraud* , T. Borzenko , G. M. Schott , K. Brunner , G. Schmidt , L. W. Molenkamp

In this paper we review the recent field of organic spintronics, where organic materials are applied as a medium to transport and control spin-polarized signals. The contacts for injecting and detecting spins are formed by metals, oxides,…

介观与纳米尺度物理 · 物理学 2007-06-13 W. J. M. Naber , S. Faez , W. G. van der Wiel

The magneto-transport properties of nanocomposite C:Co (15 and 40 at.% Co) thin films are investigated. The films were grown by ion beam co-sputtering on thermally oxidized silicon substrates in the temperature range from 200 to 500 degC.…

Recent progress in physics on spin dependent transport in magnetic nanostructures is reviewed. Special attention is paid on the spin accumulation and spin current caused by spin injection into non-magnetic metals and semiconductors and…

介观与纳米尺度物理 · 物理学 2007-05-23 S. Maekawa

Spin-dependent transport was investigated in a spin metal-oxide-semiconductor field-effect transistors (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. The spin MOSFET of bottom-gate type was fabricated by…

材料科学 · 物理学 2010-02-02 Ryosho. Nakane , Tomoyuki Harada , Kuniaki Sugiura , Satoshi Sugahara , Masaaki Tanaka

Spintronics, a transformative field of research, leverages the spin of electron to revolutionize electronic devices, offering significant advantages over traditional charge-based systems. This chapter highlights the critical role of novel…

材料科学 · 物理学 2025-02-03 A. Sud , A. Kumar , M. Cubukcu

The silicon (Si) based spin-MOSFET (metal-oxide semiconductor field-effect transistor) is considered to be the building block of low-power-consumption electronics, utilizing spin-degrees of freedom in semiconductor devices. In this paper,…

介观与纳米尺度物理 · 物理学 2018-12-27 Duong Dinh Hiep , Masaaki Tanaka , Pham Nam Hai

Spintronics is the science and technology of electric control over spin currents in solid-state-based devices. Recent advances have demonstrated a coupling between electronic spin currents in non-magnetic metals and magnons in magnetic…

介观与纳米尺度物理 · 物理学 2015-05-07 R. A. Duine , Arne Brataas , Scott A. Bender , Yaroslav Tserkovnyak

We fabricated a non-local spin valve device with Co-MgO injector/detector tunnel contacts on a graphene spin channel. In this device, the spin polarization of the injector contact can be tuned by both the injector current bias and the gate…

介观与纳米尺度物理 · 物理学 2018-10-01 Sebastian Ringer , Matthias Rosenauer , Tobias Völkl , Maximilian Kadur , Franz Hopperdietzel , Dieter Weiss , Jonathan Eroms

A magnetic-field-effect transistor is proposed that generates a spin-polarized current and exhibits a giant negative magnetoresitance. The device consists of a nonmagnetic conducting channel (wire or strip) wrapped, or sandwiched, by a…

介观与纳米尺度物理 · 物理学 2009-11-10 R. N. Gurzhi , A. N. Kalinenko , A. I. Kopeliovich , A. V. Yanovsky , E. N. Bogachek , Uzi Landman

We show how the magnetization of nano-objects can be efficiently regulated. Several types of nanosystems are considered: magnetics nanomolecules, magnetic nanoclusters, polarized nanomolecules, and magnetic graphene. These nano-objects and…

介观与纳米尺度物理 · 物理学 2016-02-23 V. I. Yukalov , V. K. Henner , T. S. Belozerova , E. P. Yukalova

Organic semiconductors find increasing importance in spin transport devices due to the modulation and control of their properties through chemical synthetic versatility. The organic materials are used as interlayers between two ferromagnet…

Spin field effect transistors (SpinFET) are an iconic class of spintronic devices that exploit gate tuned spin-orbit interaction in semiconductor channels interposed between ferromagnetic source and drain contacts to elicit transistor…

介观与纳米尺度物理 · 物理学 2023-11-08 Rahnuma Rahman , Supriyo Bandyopadhyay
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