相关论文: Silicon intercalation into the graphene-SiC interf…

We report the thermal conductance G of Au/Ti/graphene/SiO2 interfaces (graphene layers 1 < n < 10) typical of graphene transistor contacts. We find G ~ 25 MW m-2 K-1 at room temperature, four times smaller than the thermal conductance of a…

Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated, large, 160 micron x 200 micron Hall bars, and up to 4000…

57Fe-Mossbauer spectra of superconducting beta-FeSe, the Li/NH3 intercalate product and a subsequent sample of this intercalate treated with moist He gas have been measured in temperature range 4.7 - 290 K. A correlation is established…

We present energy filtered electron emission spectromicroscopy with spatial and wave-vector resolution on few layer epitaxial graphene on SiC$(000-1) grown by furnace annealing. Low energy electron microscopy shows that more than 80% of the…

The deposition and intercalation of metal atoms can induce superconductivity in monolayer and bilayer graphenes. For example, it has been experimentally proved that Li-deposited graphene is a superconductor with critical temperature $T_{c}$…

The quantum spin Hall insulator bismuthene, a two-third monolayer of bismuth on SiC(0001), is distinguished by helical metallic edge states that are protected by a groundbreaking 800 meV topological gap, making it ideal for room temperature…

The pressure effect on the superconducting transition temperature ($T_c$) of the newly-discovered Ca-intercalated graphite compound CaC$_6$ has been investigated up to $\sim$ 16 kbar. $T_c$ is found to increase under pressure with a large…

The process of anion intercalation in graphite and its reversibility plays a crucial role in the next generation energy-storage devices. Herein the reaction mechanism of the aluminum graphite dual ion cell by operando X-ray scattering from…

We theoretically investigate the plasmonic heating of graphene-based systems under the mid-infrared laser irradiation, where periodic arrays of graphene plasmonic resonators are placed on dielectric thin films. Optical resonances are…

Graphene plasmons have attracted significant attention due to their tunability, potentially long propagation lengths and ultracompact wavelengths. However, the latter characteristic imposes challenges to light-plasmon coupling in practical…

Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial chemical vapor deposition SiC reactor. A method for H2…

We have investigated epitaxial graphene films grown on SiC(0001) by annealing in an atmosphere of Ar instead of vacuum. Using AFM and LEEM we observe a significantly improved surface morphology and graphene domain size. Hall measurements on…

Plasma-enhanced chemical vapor deposition of thin a-Si:H layers on transferred large area graphene is investigated. Radio frequency (RF, 13.56 MHz) and very high frequency (VHF, 140 MHz) plasma processes are compared. Both methods provide…

Work function-mediated charge transfer in graphene/$\alpha$-RuCl$_3$ heterostructures has been proposed as a strategy for generating highly-doped 2D interfaces. In this geometry, graphene should become sufficiently doped to host surface and…

We study the heat transfer between weakly coupled systems with flat interface. We present a simple analytical result which can be used to estimate the heat transfer coefficient. As an application we consider the heat transfer between…

We study the intrinsic transport properties of suspended graphene devices at high fields (>1 V/um) and high temperatures (>1000 K). Across 15 samples, we find peak (average) saturation velocity of 3.6x10^7 cm/s (1.7x10^7 cm/s), and peak…

We report large-yield production of graphene flakes on glass by anodic bonding. Under optimum conditions, we counted several tens of flakes with lateral size around 20-30 {\mu}m and few tens of flakes with larger size. 60-70% of the flakes…

We measure the temperature distribution in a biased single-layer graphene transistor using Raman scattering microscopy of the 2D-phonon band. Peak operating temperatures of 1050 K are reached in the middle of the graphene sheet at 210 KW…

We present the first systematic study of the stability of the structure and electrical properties of FeCl$_3$ intercalated few-layer graphene to high levels of humidity and high temperature. Complementary experimental techniques such as…

Numerical and closed-form analytic expressions for plasmon dispersion relations and rates of dissipation are first obtained at finite-temperatures for free-standing gapped graphene. These closed-system results are generalized to an open…