相关论文: Joule-assisted silicidation for short-channel sili…
We have fabricated disordered superconducting nanowires of molybdenium silicide. A molybdenium nanowire is first deposited on top of silicon, and the alloy is formed by rapid thermal annealing. The method allows tuning of the crystal growth…
We demonstrate that it is possible to distinguish two conductance switching mechanisms in silver sulfide devices at room temperature. Experiments were performed using a Ag$_2$S thin film deposited on a wide Ag bottom electrode, which was…
This work reports on the morphological and electrical properties of Ni-based back-side Ohmic contacts formed by laser annealing process for SiC power diodes. Nickel films, 100 nm thick, have been sputtered on the back-side of heavily doped…
Metal nanoparticles are the most frequently used nanostructures in plasmonics. However, besides nanoparticles, metal nanowires feature several advantages for applications. Their elongation offers a larger interaction volume, their…
In this report, the contact resistance between "electrode" and "lead" is investigated for reasonable measurements of samples' resistance in a polypyrrole (PPy) nanowire device. The sample's resistance, including "electrode-lead" contact…
A Josephson diode passes current with zero resistance in one direction but is resistive in the other direction. While such an effect has been observed in several platforms, a large and tunable Josephson diode effect has been rare. Here we…
A convenient method has been developed to thin electron beam fabricated Silicon nanopillars under controlled surface manipulation by transforming the surface of the pillars to an oxide shell layer followed by the growth of sacrificial…
Silicon nanowires have been surface functionalized with the enzyme urease for biosensor applications to detect and quantify urea concentration. The device is nanofabricated from a silicon on insulator (SOI) wafer with a top down lithography…
Semiconducting diode with nonreciprocal transport effect underlies the cornerstone of contemporary integrated circuits (ICs) technology. Due to isotropic superconducting properties and the lack of breaking of inversion symmetry for…
The basis for superconducting electronics can broadly be divided between two technologies: the Josephson junction and the superconducting nanowire. While the Josephson junction (JJ) remains the dominant technology due to its high speed and…
Superconducting devices are prone to reduced performance caused by impurities and defects along the edges of their wires, which can lead to local current crowding. In this study, we explored the use of helium ion irradiation to modify the…
We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and…
The observation that the thermal conductivity of single-crystalline silicon nanowires with diameter on the length scale of 25 nm is lower than that of bulk material by two orders of magnitude has attracted the interest onto silicon as a…
Silicon has dominated the microelectronics industry for the last 50 years. With its zero nuclear spin isotope (28Si) and low spin orbit coupling, it is believed that silicon can become an excellent host material for an entirely new…
Nominally undoped silicon nanowires (NW) were grown by catalytic chemical vapor deposition. The growth process was optimized to control the NWs diameters by using different Au catalyst thicknesses on amorphous SiO2, Si3N4, or crystalline-Si…
Utilizing atomistic lattice dynamics and scattering theory, we study thermal transport in nanodevices made of 10 nm thick silicon nanowires, from 10 to 100 nm long, sandwiched between two bulk reservoirs. We find that thermal transport in…
Energetics and quantized conductance in jellium modeled nanowires are investigated using the local density functional based shell correction method, extending our previous study of uniform in shape wires [C. Yannouleas and U. Landman, J.…
Nanocrystalline bulk materials are desirable for many applications as they combine mechanical strength and specific electronic transport properties. Our bottom up approach starts with tailored nanoparticles. Compaction and thermal treatment…
Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ~6V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of…
Niobium thin film nanostructures were fabricated using electron beam lithography and a liftoff process involving a four layer resist system. Wires having micrometres in length and below 200 nm in width were deposited on an insulating…