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Detection of infrared light is central to diverse applications in security, medicine, astronomy, materials science, and biology. Often different materials and detection mechanisms are employed to optimize performance in different spectral…

介观与纳米尺度物理 · 物理学 2012-07-03 J. Yan , M. -H. Kim , J. A. Elle , A. B. Sushkov , G. S. Jenkins , H. M. Milchberg , M. S. Fuhrer , H. D. Drew

Using a first principles density functional electronic structure method, we study the energy gaps and magnetism in bilayer graphene nanoribbons as a function of the ribbon width and the strength of an external electric field between the…

材料科学 · 物理学 2009-11-13 Bhagawan Sahu , Hongki Min , Allan. H. MacDonald , Sanjay K. Banerjee

In this paper, we propose a novel S/D engineering for dual-gated Bilayer Graphene (BLG) Field Effect Transistor (FET) using doped semiconductors (with a bandgap) as source and drain to obtain unipolar complementary transistors. To simulate…

介观与纳米尺度物理 · 物理学 2016-11-15 Kausik Majumdar , Kota V. R. M. Murali , Navakanta Bhat , Fengnian Xia , Yu-Ming Lin

The charge neutrality point of bilayer graphene, denoted as {\nu} = 0 state, manifests competing phases marked by spontaneously broken isospin (spin/valley/layer) symmetries under external magnetic and electric fields. However, due to their…

介观与纳米尺度物理 · 物理学 2024-12-31 Ravi Kumar , Saurabh Kumar Srivastav , Ujjal Roy , Ujjawal Singhal , K. Watanabe , T. Taniguchi , Vibhor Singh , P. Roulleau , Anindya Das

We calculate the electronic and thermal transport properties of devices based on finite graphene antidot lattices (GALs) connected to perfect graphene leads. We use an atomistic approach based on the $\pi$-tight-binding model, the Brenner…

介观与纳米尺度物理 · 物理学 2012-09-17 Tue Gunst , Jing-Tao Lü , Troels Markussen , Antti-Pekka Jauho , Mads Brandbyge

Electronic localization is numerically studied in disordered bilayer graphene with an electric-field induced energy gap. Bilayer graphene is a zero-gap semiconductor, in which an energy gap can be opened and controlled by an external…

介观与纳米尺度物理 · 物理学 2009-11-13 Mikito Koshino

Graphene [1] and its bilayer have generated tremendous excitement in the physics community due to their unique electronic properties [2]. The intrinsic physics of these materials, however, is partially masked by disorder, which can arise…

介观与纳米尺度物理 · 物理学 2010-09-10 Benjamin E. Feldman , Jens Martin , Amir Yacoby

The paper discusses the chiral tunnelling of charge carriers through double barrier structure in twisted graphene bilayer. The theoretical analysis investigates the transmission probability for various system parameters under both symmetric…

介观与纳米尺度物理 · 物理学 2023-07-31 A. Bahlaoui , Y. Zahidi

We investigate the transport properties of charge carriers in AB bilayer graphene through a triple electrostatic barrier. We calculate the transmission and reflection using the continuity conditions at the interfaces of the triple barrier…

介观与纳米尺度物理 · 物理学 2022-11-30 Mouhamadou Hassane Saley , Abderrahim El Mouhafid , Ahmed Jellal , Ahmed Siari

We study the structural and thermodynamic properties of bilayer graphene, a prototype two-layer membrane, by means of Monte Carlo simulations based on the empirical bond order potential LCBOPII. We present the temperature dependence of…

材料科学 · 物理学 2015-05-18 K. V. Zakharchenko , J. H. Los , M. I. Katsnelson , A. Fasolino

We investigate magneto-transport through graphene nano-ribbons as a function of gate and bias voltage, and temperature. We find that a magnetic field systematically leads to an increase of the conductance on a scale of a few tesla. This…

介观与纳米尺度物理 · 物理学 2010-10-12 Jeroen B. Oostinga , Benjamin Sacepe , Monica F. Craciun , Alberto F. Morpurgo

We show that gated bilayer graphene zigzag ribbons possess a fast and a slow edge, characterized by edge state velocities that differ due to non-negligible next-nearest-neighbor hopping elements. By applying bosonization and renormalization…

介观与纳米尺度物理 · 物理学 2010-07-08 Alberto Cortijo , Laszlo Oroszlany , Henning Schomerus

We compute the phase diagram of a biased graphene bilayer. The existence of a ferromagnetic phase is discussed with respect both to carrier density and temperature. We find that the ferromagnetic transition is first order, lowering the…

介观与纳米尺度物理 · 物理学 2008-05-06 Eduardo V. Castro , N. M. R. Peres , T. Stauber , N. A. P. Silva

We use a tight binding approach and density functional theory calculations to study the band structure of graphene/hexagonal boron nitride bilayer system in the most stable configuration. We show that an electric field applied in the…

材料科学 · 物理学 2010-11-10 J. Slawinska , I. Zasada , Z. Klusek

The importance of controlling both the charge carrier density and the band gap of a semiconductor cannot be overstated, as it opens the doors to a wide range of applications, including, e.g., highly-tunable transistors, photodetectors, and…

We consider gated graphene nanoribbons subject to Berry-Mondragon boundary conditions in the presence of weak impurities. Using field--theoretical methods, we calculate the density of charge carriers (and, thus, the quantum capacitance) as…

介观与纳米尺度物理 · 物理学 2014-03-07 C. G. Beneventano , I. V. Fialkovsky , E. M. Santangelo , D. V. Vassilevich

The effect of a randomly fluctuating gap, created by a random staggered potential, is studied in a monolayer and a bilayer of graphene. The density of states, the one-particle scattering rate and transport properties (diffusion coefficient…

介观与纳米尺度物理 · 物理学 2009-03-24 K. Ziegler

The resistivity of gated graphene is studied taking into account electron and hole scattering by short- and long-range structural imperfections the characteristics of disorder were taken from the scanning tunneling microscopy data and by…

材料科学 · 物理学 2007-12-29 F. T. Vasko , V. Ryzhii

We review the transmission of Dirac electrons through a potential barrier in the presence of circularly polarized light. A different type of transmission is demonstrated and explained. Perfect transmission for nearly head-on collision in…

介观与纳米尺度物理 · 物理学 2014-08-28 Godfrey Gumbs , Danhong Huang , Andrii Iurov , Bo Gao

Valley is a useful degree of freedom for non-dissipative electronics since valley current that can flow even in an insulating material does not accompany electronic current. We use dual-gated bilayer graphene in the Hall bar geometry to…

介观与纳米尺度物理 · 物理学 2016-01-20 Yuya Shimazaki , Michihisa Yamamoto , Ivan V. Borzenets , Kenji Watanabe , Takashi Taniguchi , Seigo Tarucha