相关论文: Carrier-induced modulation of radiation by a gated…

The possibility of modulation of mid-IR radiation by low voltage gated single/multilayer graphene on Pb(ZrxTi1-x)O3 (PZT) ferroelectric substrate was demonstrated theoretically. The depth of modulation for 5 layer graphene for the range of…

An electro-absorption optical modulator concept based upon a dual-graphene layer is presented. The device consists of a silicon-on-insulator waveguide upon which two graphene layers reside, separated by a thin insulating region. The lower…

I present a review of both experimental and theoretical studies performed during the recent three years, which deal with the physical properties and possible applications of graphene placed on ferroelectric (organic or Pb(ZrxTi1-x)O3 (PZT)…

We studied the magneto-transport properties of graphene prepared by exfoliation on a III V semiconductor substrate. Tuneability of the carrier density of graphene was achieved by using a doped GaAs substrate as a back-gate. A GaAs/AlAs…

Graphene based THz modulators are promising due to the conical band structure and high carrier mobility of graphene. Here, we tune the Fermi level of graphene via electrical gating with the help of ionic liquid to control the THz…

The ultimate surface exposure provided by graphene monolayer makes it the ideal sensor platform but also exposes its intrinsic properties to any environmental perturbations. In this work, we demonstrate that the charge carrier density of…

Controlled modulation of electronic band structure in two-dimensional (2D) materials via doping is crucial for devices fabrication. For instance doped graphene has been envisaged for various applications like sensors, super-capacitors,…

We study the effects of polarizable substrates such as SiO2 and SiC on the carrier dynamics in graphene. We find that the quasiparticle spectrum acquires a finite broadening due to the long-range interaction with the polar modes at the…

The electronic transport properties of graphene-based superlattice structures are investigated. A graphene-based modulation-doped superlattice structure geometry is proposed and consist of periodically arranged alternate layers:…

In this paper we report phase modulation obtained by inducing a capacitive charge on graphene layers embedded in the core of a waveguide. There is a biasing regime in which graphene absorption is negligible but large index variations can be…

Fast modulation and switching of light at visible and near-infrared (vis-NIR) frequencies is of utmost importance for optical signal processing and sensing technologies. No fundamental limit appears to prevent us from designing…

We investigate the transport properties of graphene underneath metal to reveal whether the carrier density in graphene underneath source/drain electrodes in graphene field-effect transistors is fixed. The resistance of the graphene/Ni…

Graphene is a 2D material with appealing electronic and optoelectronic properties. It is a zero-bandgap material with valence and conduction bands meeting in a single point (Dirac point) in the momentum space. Its conductivity can be…

The modulation depth of 2-D electron gas (2DEG) based THz modulators using AlGaAs/GaAs heterostructures with metal gates is inherently limited to < 30%. The metal gate not only attenuates the THz signal (> 90%) but also severely degrades…

Mid-infrared (mid-IR) emission resonating with molecular vibration is one of the important pathways to deliver heat energy required for various chemical reactions. However, its practical applications have been limited due to the lack of…

This work analyzes the emission and radiation properties of a single optical emitter embedded in a graphene-coated subwavelength wire. We discuss the modifications of the spontaneous emission rate and the radiation efficiency as a function…

Modulation doping, a well-established technique for traditional semiconductor heterostructures, is a promising approach for tailoring carrier concentration in 2D materials devices. In this letter we report on photoinduced modulation doping…

We propose a new method to use gapped graphene as barrier to confine electrons in gapless graphene and form a good quantum dot, which can be realized on an oxygen-terminated $SiO_{2}$ substrate partly H-passivated. In particular, we use…

We report a method of fabricating self-aligned, top-gated graphene field-effect transistors (GFETs) employing polyethyleneimine spin-on-doped source/drain access regions, resulting in a 2X reduction of access resistance and a 2.5X…

We present a hybrid graphene dielectric metasurface design to achieve strong tunable and modulated transmission at near-infrared (near-IR) frequencies. The proposed device is constituted by periodic pairs of asymmetric silicon nanobars…