相关论文: An intrinsic mobility ceiling of Si bulk

We theoretically study the electronic transport in the monolayer of dithiolated phenylene vinylene oligomeres coupled to the (111) surfaces of gold electrodes. We use non-equilibrium Green functions (NEGF) and density functional theory(DFT)…

We describe how the spin Hall effect (SHE) can be studied from ab-initio by combining density functional theory with the non-equilibrium Green's functions technique for quantum transport into the so-called DFT+NEGF method. After laying down…

Using accurate Hybrid-Functional DFT coupled with the Non-Equilibrium Green's function (NEGF) formalism, we explore and benchmark the fundamental scaling limits of CNT-FETs against Si and 2D-material MoS$_2$ and HfS$_2$ Nanosheets,…

The electron transport in the two-dimensional gas formed in tensile-strained Si1-xGex/Si/Si1-xGex heterostructures is investigated using Monte Carlo simulation. At first the electron mobility is studied in ungated modulation doped…

We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities $n\simeq (1-50) \times 10^{11}$cm$^{-2}$, which includes the vicinity of the apparent metal-insulator transition in…

In this letter, we report the magneto-electronic properties of high mobility InAs quantum point contacts grown on InP substrates. The 1D conductance reaches a maximum value of 17 plateaus, quantized in units of 2e^2/h, where e is the…

We investigate theoretically 2D electronic transport in Si:P $\delta$-doped layers limited by charged-dopant scattering. Since the carrier density is approximately equal to the dopant impurity density, the density dependent transport shows…

Si dominates the semiconductor industry material but possesses an abnormally low room temperature hole mobility (505 cm^2/Vs), which is four times lower than that of Diamond and Ge (2000 cm^2/Vs), two adjacent neighbours in the group IV…

Thermal transport in low-dimensional semiconductors is crucial for advancing thermal management in nanoelectronics, quantum devices, and thermoelectric devices. Recent molecular dynamics (MD) studies have identified a nonmonotonic…

By carrying out density functional theory (DFT) analysis within the Keldysh non-equilibrium Green's function (NEGF) framework, we investigate the quantum transport properties of Au-C60-Au molecular junctions from the first principles. We…

We perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs) formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting mechanisms in this increasingly important materials…

Density functional theory (DFT) combined with non-equilibrium Greens functions (NEGF) is a powerful approach to model quantum transport under external bias potentials, at reasonable computational cost. In this work we present a new…

In this paper we report the measurement of conductance fluctuations in single crystals of Si made metallic by heavy doping (n \approx 2-2.5n_c, n_c being critical composition at Metal-Insulator transition). Since all dimensions (L) of the…

The intrinsic values of the carriers mobility and density of the graphene layers inside graphite, the well known structure built on these layers in the Bernal stacking configuration, are not well known mainly because most of the research…

4H-Silicon Carbide (4H-SiC) possesses a high Baliga figure of merit, making it a promising material for power electronics. However, its applications are limited by its low hole mobility. Herein, we found that the hole mobility of 4H-SiC is…

We have studied the dark conductivity of a broad microstructural range of plasma deposited single phase undoped microcrystalline silicon films in a wide temperature range (15 - 450K) to identify the possible transport mechanisms and the…

The Hall and Seebeck coefficients, electrical resistivity and thermal conductivity of polycrystalline NiSi3P4 were characterized from 2 to 775K. Undoped NiSi3P4 behaves like a narrow gap semiconductor, with activated electrical resistivity…

With the increasing miniaturization of electronic components and the need to optimize thermal management, it has become essential to understand heat transport at metal/semiconductor interfaces. While it has been recognized decades ago that…

The charge-carrier transport properties of ultrathin metallic films are analysed with ab-initio methods using the density functional theory (DFT) on free-standing single crystalline slabs in the thickness range between 1 and 8 monolayers…

The electron spin lifetime and diffusion length are transport parameters that define the scale of coherence in spintronic devices and circuits. Since these parameters are many orders of magnitude larger in semiconductors than in metals,…