相关论文: Enhancing hole mobility in III-V semiconductors
Charge-carrier transport in a paradigmatic semicrystalline polymer semiconductor (P3HT) is important for both fundamental understanding and applications. In samples with enhanced structural disorder due to ad-hoc point defects, the mobility…
The influence of carrier type on superconductivity has been an important issue for understanding both conventional and unconventional superconductors [1-7]. For elements that superconduct, it is known that hole-carriers govern the…
A series of III-V ternary and quarternary digital alloy avalanche photodiodes (APDs) have recently been seen to exhibit very low excess noise. Using band inversion of an environment-dependent atomistic tight binding description of short…
We have fabricated ambipolar transistors on chemically prepared hydrogen-terminated Si(111) surfaces, in which a two-dimensional electron system (2DES) or a two-dimensional hole system (2DHS) can be populated in the same conduction channel…
Temperature dependent magneto-transport measurements in magnetic fields of up to 12 Tesla were performed on thin film vanadium dioxide (VO2) across the metal-insulator transition (MIT). The Hall carrier density increases by 4 orders of…
Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be…
Atomically thin semiconducting MoS2 is of great interest for high-performance flexible electronic and optoelectronic devices. Initial measurements using back-gated field-effect transistor (FET) structures on SiO2 yielded mobility of 1-50…
To make complementary GaN electronics more than a pipe dream, it is essential to understand the low mobility of 2D hole gases in III-Nitride heterostructures. This work derives both the acoustic and optical phonon spectra present in one of…
We present the concept and experimental realization of polarization-induced bulk electron doping in III-V nitride semiconductors. By exploiting the large polarization charges in the III-V nitrides, we are able to create wide slabs of high…
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface…
In this work, we present the investigation of temperature dependent hall measurement of the ultra thin VO$_2$ films grown on Si/SiO$_2$ substrate. Experimental results suggest that electrons are the predominant carrier both in the…
III-V materials show a wide range of gaps making them ideal for the design of high efficiency solar cells. This chapter reviews relevant growth methods and material properties of these materials and discusses methods of combining…
High-mobility oxide heterostructures could be applied for high-frequency devices, transparent conductors, and spin-orbit logic devices. SrTiO$_3$ is one of the most studied oxide substrate materials for heterostructures. To date, the…
Nanotechnology's impact on semiconductor industry advancement, particularly through the engineering of nanostructures like nanowires, opens new possibilities for material functionality due to the tunable physical properties of…
Half-Heusler phases are among the most extensively studied thermoelectic materials. Bipolar thermal conductivity analysis performed for their sub-group based on rare-earth (R) metals, RNiSb, indicated on high mobility ratio in favor of…
Semiconducting single-walled carbon nanotubes are studied in the diffusive transport regime. The peak mobility is found to scale with the square of the nanotube diameter and inversely with temperature. The maximum conductance, corrected for…
Quasi-1D nanowires of topological insulators are emerging candidate structures in superconductor hybrid architectures for the realization of Majorana fermion based quantum computation schemes. It is however technically difficult to both…
A domain wall separating two oppositely magnetized regions in a ferromagnetic semiconductor exhibits, under appropriate conditions, strongly nonlinear I-V characteristics similar to those of a p-n diode. We study these characteristics as…
Predicting charge transport in organic molecular crystals is notoriously challenging. Carrier mobility calculations in organic semiconductors are dominated by quantum chemistry methods based on charge hopping, which are laborious and only…
Tuning the bandgap in ternary III-V semiconductors via modification of the composition or the strain in the material is a major approach for the design of optoelectronic materials. Experimental approaches screening a large range of possible…