相关论文: Superlattices of Bi2Se3/In2Se3: Growth Characteris…
Topological insulators (TIs) are a class of materials characterized by an insulting bulk and high mobility topologically protected surface states, making them promising candidates for future optoelectronic and quantum devices. Although…
In typical topological insulator (TI) systems the TI is bordered by a non-TI insulator, and the surrounding conventional insulators, including vacuum, are not generally treated as part of the TI system. Here, we implement the first material…
In search of materials with three-dimensional flat band dispersions, using {\em ab-initio} computations, we investigate how topological phases evolve as a function of hydrostatic pressure and uniaxial strain in two types of superlattices:…
Epitaxial BiFeO3/SrRuO3 superlattices have been grown by pulsed laser deposition on a (001) oriented LaAlO3 substrate and probed by X-ray diffraction and Raman spectroscopy. To investigate the structural competition between rhombohedral…
Bi$_2$Se$_3$ is a widely studied 3D topological insulator having potential applications in optics, electronics, and spintronics. When the thickness of these films decrease to less than approximately 6 nm, the top and bottom surface states…
The van der Waals epitaxy of single crystalline Bi2Se3 film was achieved on hydrogen passivated Si(111) (H:Si) substrate by physical vapor deposition. Valence band structures of Bi2Se3/H:Si heterojunction were investigated by X-ray…
Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for…
In spite of much work on topological insulators (TIs), systematic experiments for TI/TI heterostructures remain absent. We grow a high quality heterostructure containing single quintuple layer (QL) of Bi2Se3 on 19 QLs of Bi2Te3 and compare…
Currently known topological insulators (TIs) are limited to narrow gap compounds incorporating heavy elements, thus severely limiting the material pool available for such applications. We show via first-principle calculations how a…
Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning…
Indium selenide, In2Se3, has recently attracted growing interest due to its novel properties, including room temperature ferroelectricity, outstanding photoresponsivity, and exotic in-plane ferroelectricity, which open up new regimes for…
Ultra-thin tri-color (tri-layer) titanate superlattices ([3u.c. LaTiO3/2u.c. SrTiO3/3u.c. YTiO3], u.c. = unit cells) were grown in a layer-by-layer way on single crystal TbScO3 (110) substrates by pulsed laser deposition. High sample…
Motivated by the high superconducting transition temperature of monolayer FeSe on SrTiO3, we propose a potential three-dimensional high-temperature superconductor superlattice FeSe-SrTiO3 and study its structural stability and electronic…
A Moire superlattice on the topological insulator surface is predicted to exhibit many novel properties but has not been experimentally realized. Here, we developed a two-step growth method to successfully fabricate a topological insulator…
Insulating substrates are crucial for electrical transport study and room temperature application of topological insulator films at thickness of only several nanometers. High quality quantum well films of Bi2Se3, a typical three-dimensional…
The integration of quantum materials like topological insulators (TIs) with magnetic insulators (MIs) has important technological implications for spintronics and quantum computing. Here we report excellent crystallinity of c-axis oriented…
High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were…
The discovery of topological insulators (TIs) and their unique electronic properties has motivated research into a variety of applications, including quantum computing. It has been proposed that TI surface states will be energetically…
We use real-time reflection high energy electron diffraction intensity oscillation to establish the Te-rich growth dynamics of topological insulator thin films of Bi2Te3 on Si(111) substrate by molecular beam epitaxy. In situ angle resolved…
We report the fabrication of (111)-oriented superlattice structures with alternating 2m-layers (m = 1, 2, and 3) of Ca0.5Sr0.5IrO3 perovskite and two layers of SrTiO3 perovskite on SrTiO3(111) substrates. In the case of m = 1 bilayer films,…