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相关论文: Graphene transistors are insensitive to pH changes…

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Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two…

介观与纳米尺度物理 · 物理学 2011-01-19 Haomin Wang , Yihong Wu , Chunxiao Cong , Jingzhi Shang , Ting Yu

Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached…

介观与纳米尺度物理 · 物理学 2016-02-19 N. C. S. Vieira , J. Borme , G. Machado , F. Cerqueira , P. P. Freitas , V. Zucolotto , N. M. R. Peres , P. Alpuim

Hysteresis and commonly observed p-doping of graphene based field effect transistors (FET) was already discussed in reports over last few years. However, the interpretation of experimental works differs; and the mechanism behind the…

介观与纳米尺度物理 · 物理学 2012-09-25 Alina Veligura , Paul J. Zomer , Ivan J. Vera-Marun , Csaba Józsa , Pavlo I. Gordiichuk , Bart J. van Wees

Graphene serves as an ideal platform to investigate the microscopic structure and reaction kinetics at the graphitic electrode interfaces. However, graphene is susceptible to various extrinsic factors, e.g. substrate, causing much confusion…

化学物理 · 物理学 2022-07-19 Ying Xu , You-Bo Ma , Feng Gu , Shan-Shan Yang , Chuan-Shan Tian

Conventional field effect transistor operation in graphene is limited by its zero gap and minimum quantum conductivity. In this work, we report on controlled electrochemical modification of graphene such that its conductance changes by more…

材料科学 · 物理学 2007-12-13 T. J. Echtermeyer , M. C. Lemme , M. Baus , B. N. Szafranek , A. K. Geim , H. Kurz

We report the fabrication and characterization of a simple gate-free graphene device as a pH sensor. The graphene sheets are made by mechanical exfoliation. Platinum contact electrodes are fabricated with a mask-free process using focused…

材料科学 · 物理学 2012-07-05 Nan Lei , Pengfei Li , Wei Xue , Jie Xu

Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate…

Field-Effect Transistors with graphene channels or GFETs are an interesting alternative for the detection of analytes in biological fluids since the electrical behavior of the channel changes when exposed to a sample (among other detection…

医学物理 · 物理学 2024-07-16 Ricardo Bravo , Ricardo Silva , Eric Barret , John Brunnings , Adianette Segarra

The chemical activity of ionized hydrogen describes the potency of protons in solution and is used to define the pH with wide-ranging applications in biological and materials sciences. Measuring pH with graphene field-effect transistors…

应用物理 · 物理学 2022-10-26 Nicholas E. Fuhr , Mohamed Azize , David J. Bishop

In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor…

We explore the dependence of electrical transport in a graphene field effect transistor (GraFET) on the flow of the liquid within the immediate vicinity of that transistor. We find large and reproducible shifts in the charge neutrality…

介观与纳米尺度物理 · 物理学 2012-05-15 A. K. M. Newaz , D. A. Markov , D. Prasai , K. I. Bolotin

Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene {field-effect} transistors (GFETs) with enhanced RF performance…

应用物理 · 物理学 2019-11-18 A. Toral-Lopez , E. G. Marin , F. Pasadas , J. M. Gonzalez-Medina , F. G. Ruiz , D. Jiménez , A. Godoy

We present a graphene-based phase shifter for radio-frequency (RF) phase-array applications. The core of the designed phase-shifting system consists of a graphene field-effect transistor (GFET) used in a common source amplifier…

介观与纳米尺度物理 · 物理学 2021-03-16 A. Medina-Rull , F. Pasadas , E. G. Marin , A. Toral-Lopez , J. Cuesta , A. Godoy , D. Jiménez , F. G. Ruiz

Graphene field-effect transistors (GFETs) are among the most promising platforms for ultrasensitive chemical and biological sensing due to their high carrier mobility, large surface area, and low intrinsic noise. However, conventional…

应用物理 · 物理学 2025-09-05 Vinay Kammarchedu , Heshmat Asgharian , Hossein Chenani , Aida Ebrahimi

Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon electronic era. For this reason, experimental research on…

介观与纳米尺度物理 · 物理学 2020-09-17 Giovanni Spinelli , Patrizia Lamberti , Vincenzo Tucci , Francisco Pasadas , David Jiménez

We performed radiofrequency (RF) reflectometry measurements at 2.4 GHz on electrolyte-gated graphene field-effect transistors (GFETs) utilizing a tunable stub-matching circuit for impedance matching. We demonstrate that the gate voltage…

介观与纳米尺度物理 · 物理学 2015-06-18 W. Fu , M. El Abbassi , T. Hasler , M. Jung , M. Steinacher , M. Calame , C. Schönenberger , G. Puebla-Hellmann , S. Hellmüller , T. Ihn , A. Wallraff

Graphene field effect transistors (G-FETs) have appeared as suitable candidates for sensing charges and have thus attracted large interest for ion and chemical detections. In particular, their high sensitivity, chemical robustness,…

介观与纳米尺度物理 · 物理学 2024-02-08 Océane Terral , Guillaume Audic , Arnaud Claudel , Justine Magnat , Aurélie Dupont , Christophe J. Moreau , Cécile Delacour

The linear band dispersion of graphene's bands near the Fermi level gives rise to its unique electronic properties, such as a giant carrier mobility, and this has triggered extensive research in applications, such as graphene field-effect…

Preparing graphene and its derivatives on functional substrates may open enormous opportunities for exploring the intrinsic electronic properties and new functionalities of graphene. However, efforts in replacing SiO$_{2}$ have been greatly…

This paper provides an overview on graphene solution-gated field effect transistors (SGFETs) and their applications in bioelectronics. The fabrication and characterization of arrays of graphene SGFETs is presented and discussed with respect…

材料科学 · 物理学 2013-06-10 Lucas H. Hess , Max Seifert , Jose A. Garrido
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