相关论文: Tunable magnetoresistance behavior in suspended gr…
We report a double-layer electronic system made of two closely-spaced but electrically isolated graphene monolayers sandwiched in boron nitride. For large carrier densities in one of the layers, the adjacent layer no longer exhibits a…
Graphene nanoribbons (GNRs), low-dimensional platforms for carbon-based electronics, show the promising perspective to also incorporate spin polarization in their conjugated electron system. However, magnetism in GNRs is generally…
A brief review of experiments directed to study a gradual localization of charge carriers and metal-insulator transition in samples of disordered monolayer graphene is presented. Disorder was induced by irradiation with different doses of…
Magnetoresistance (MR) of ion irradiated monolayer graphene samples with variable-range hopping (VRH) mechanism of conductivity was measured at temperatures down to $T = 1.8$ K in magnetic fields up to $B = 8$ T. It was observed that in…
We have used oxygen ions irradiation to generate controlled structural disorder in thin manganite films. Conductive atomic force microscopy CAFM), transport and magnetic measurements were performed to analyze the influence of the…
Magnetic topological insulators offer a platform to control electronic topology through magnetic order, yet reliable routes to tune their properties remain limited. Here, we show that ion irradiation allows to modify the magnetic and the…
We study theoretically magnetoresistance (MR) of graphene with different types of disorder. For short-range disorder, the key parameter determining magnetotransport properties---a product of the cyclotron frequency and scattering…
The magnetorotational instability (MRI) of a weakly ionized, differentially rotating, magnetized plasma disk is investigated in the multi-fluid framework. The disk is threaded by a uniform vertical magnetic field and charge is carried by…
A detailed magnetoresistance study of bulk and microflake samples of highly oriented pyrolytic graphite with a thickness of 25 $\mu$m to 23~nm reveals that the usually observed field-induced metal-insulator and electronic phase transitions…
The Dirac-like surface states of the topological insulators (TIs) are protected by time reversal symmetry (TRS) and exhibit a host of novel properties. Introducing magnetism into TI, which breaks the TRS, is expected to create exotic…
The change of a material's electrical resistance (R) in response to an external magnetic field (B) provides subtle information for the characterization of its electronic properties and has found applications in sensor and storage related…
The ordinary magnetoresistance (MR) of doped semiconductors is positive and quadratic in a low magnetic field, B, as it should be in the framework of the Boltzmann kinetic theory or in the conventional hopping regime. We observe an unusual…
We predict and demonstrate that a disorder induced carrier density inhomogeneity causes magnetoresistance (MR) in a two-dimensional electron system. Our experiments on graphene show a quadratic MR persisting far from the charge neutrality…
We studied the effect of low energy (30 keV) ionic implantation of Ga+ in the direction parallel to the graphene planes (perpendicular to c-axis) in oriented graphite ribbons with widths around 500 nm. Our experiments have reproducibly…
We observe an unusual tunneling magnetoresistance (TMR) phenomenon in a composite of La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ with CoFe$_{2}$O$_{4}$ where the TMR versus applied magnetic field loop suggests a "negative coercive field". Tracing its…
We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from $T$ = 1.7 K up to room temperature.…
In heterostructures consisting of atomically thin crystals layered on top of one another, lattice mismatch or rotation between the layers results in long-wavelength moir\'e superlattices. These moir\'e patterns can drive significant band…
The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias…
We put forward a theory of the weak localization in two dimensional graphene layers which explains experimentally observable transition between positive and negative magnetoresistance. Calculations are performed for the whole range of…
Inducing magnetism in graphene holds great promises, such as controlling the exchange interaction with a gate electrode and generating exotic magnetic phases. Coating graphene with magnetic molecules or atoms has so far mostly lead to…