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相关论文: The Effect of Disorder in Superfluid Double Layer …

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Graphene bilayers can condense into a state with spontaneous interlayer phase coherence that supports dissipationless counterflow supercurrents. Here we address the influence of disorder on the graphene bilayer mean-field and…

介观与纳米尺度物理 · 物理学 2009-11-13 R. Bistritzer , A. H. MacDonald

We investigate a Bose-Einstein condensate trapped in a 2D optical lattice in the presence of weak disorder within the framework of the Bogoliubov theory. In particular, we analyze the combined effects of disorder and an optical lattice on…

量子气体 · 物理学 2015-05-14 Ying Hu , Zhaoxin Liang , Bambi Hu

The interplay between different types of disorder and electron-electron interactions in graphene planes is studied by means of Renormalization Group techniques. The low temperature properties of the system are determined by fixed points…

强关联电子 · 物理学 2009-11-10 T. Stauber , F. Guinea , M. A. H. Vozmediano

We study the effects of dissipation and time-independent nonequilibrium drive on an open superconducting graphene. In particular, we investigate how dissipation and nonequilibrium effects modify the semi-metal-BCS quantum phase transition…

强关联电子 · 物理学 2009-11-13 So Takei , Yong Baek Kim

Using the tight-binding model, we investigate the influence of vacancy disorder on electrical transport in graphene Hall bars in the presence of quantizing magnetic fields. Disorder, induced by a random distribution of monovacancies, breaks…

介观与纳米尺度物理 · 物理学 2016-12-21 M. D. Petrović , F. M. Peeters

Double layer graphene is a gapless semiconductor which develops a finite gap when the layers are placed at different electrostatic potentials. We study, within the tight-biding approximation, the electronic properties of the gaped graphene…

介观与纳米尺度物理 · 物理学 2007-11-26 Eduardo V. Castro , N. M. R. Peres , J. M. B. Lopes dos Santos

Here, we report the performance of vacancy affected supercell of a hybrid Graphene-Boron Nitride embedded armchair nanoribbon (a-GNR-BN) based n-MOSFET at its ballistic transport limit using Non Equilibrium Green's Function (NEGF)…

介观与纳米尺度物理 · 物理学 2015-12-07 Anuja Chanana , Amretashis Sengupta , Santanu Mahaptra

We consider the instability of bilayer graphene with respect to a distorted configuration in the same spirit as the model introduced by Su, Schrieffer and Heeger. By computing the total energy of a distorted bilayer, we conclude that the…

介观与纳米尺度物理 · 物理学 2009-02-12 Vitor M. Pereira , R. M. Ribeiro , N. M. R. Peres , A. H. Castro Neto

It has been shown that the Kohn--Luttinger superconductivity mechanism interplaying with other types of ordering can be implemented in systems with a hexagonal lattice. A number of unusual properties of such systems in the normal phase have…

In this work the conducting properties of graphene lattice with a particular concentration of defect (5\% and 10\%) has been studied. The real space block recursion method introduced by Haydock et al. has been used in presence of the random…

材料科学 · 物理学 2021-04-09 Banasree Sadhukhan , Subhadeep Bandyopadhyay , Arabinda Nayak , Abhijit Mookerjee

The lattice gas model of condensation in a heterogeneous pore system, represented by a random graph of cells, is studied using an exact analytical solution. A binary mixture of pore cells with different coordination numbers is shown to…

We investigate the effect of different edge types on the statistical properties of both the energy spectrum of closed graphene billiards and the conductance of open graphene cavities in the semiclassical limit. To this end, we use the…

介观与纳米尺度物理 · 物理学 2011-11-15 J. Wurm , K. Richter , I. Adagideli

The Bose-Einstein condensation of vacancies in a three-dimensional decorated lattice is considered. The model describes possible scenario of superfluidity of solid helium, caused by the presence of zero-point vacancies in a dislocation…

统计力学 · 物理学 2009-11-13 D. V. Fil , S. I. Shevchenko

The density of states (DoS), $\varrho(E)$, of graphene is investigated numerically and within the self-consistent T-matrix approximation (SCTMA) in the presence of vacancies within the tight binding model. The focus is on compensated…

介观与纳米尺度物理 · 物理学 2014-11-07 V. Haefner , J. Schindler , N. Weik , T. Mayer , S. Balakrishnan , R. Narayanan , S. Bera , F. Evers

We study the effects of disorder in the electronic properties of graphene multilayers, with special focus on the bilayer and the infinite stack. At low energies and long wavelengths, the electronic self-energies and density of states…

强关联电子 · 物理学 2013-05-29 Johan Nilsson , A. H. Castro Neto , F. Guinea , N. M. R. Peres

We investigate electronic transport in the nitrogen-doped graphene containing different configurations of point defects: singly or doubly substituting N atoms and nitrogen-vacancy complexes. The results are numerically obtained using the…

介观与纳米尺度物理 · 物理学 2014-08-06 T. M. Radchenko , V. A. Tatarenko , I. Yu. Sagalianov , Yu. I. Prylutskyy

We investigate the effects of vacancies, disorder and sublattice polarization on the electronic properties of a monolayer graphene in the quantum Hall regime. Energy spectra as a function of magnetic field and the localization properties of…

介观与纳米尺度物理 · 物理学 2015-05-13 Ana L. C. Pereira , Peter A. Schulz

The collective properties of different quasiparticles in various graphene based structures in high magnetic field have been studied. We predict Bose-Einstein condensation (BEC) and superfluidity of 2D spatially indirect magnetoexcitons in…

介观与纳米尺度物理 · 物理学 2015-05-14 Oleg L. Berman , Roman Ya. Kezerashvili , Yurii E. Lozovik

A tight-binding approach based on the Chebyshev-Bogoliubov-de Gennes method is used to describe disordered single-layer graphene Josephson junctions. Scattering by vacancies, ripples or charged impurities is included. We compute the…

超导电性 · 物理学 2015-06-23 W. A. Munoz , L. Covaci , F. M. Peeters

Strongly correlated systems of fermions have an interesting phase diagram arising from the Hubbard gap. Excitation across the gap leads to the formation of doubly occupied lattice sites (doublons). This state offers interesting electronic…

强关联电子 · 物理学 2019-12-20 M. Bonitz , K. Balzer , N. Schlünzen , M. Rasmussen , J. -P. Joost
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